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Method for processing suspended silicon thermistor

A thermistor and processing method technology, applied in metal material coating technology, technology for producing decorative surface effects, decorative arts, etc. The effect of improving the temperature coefficient of resistance and simplifying the process steps

Inactive Publication Date: 2012-10-03
NORTHWESTERN POLYTECHNICAL UNIV
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  • Description
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  • Application Information

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Problems solved by technology

The existing processing method of suspended thermistor has short suspension distance and low yield. For example, the paper "Development of a Dual-Axis Convective Gyroscope With Low Thermal-Induced Stress Sensing Element" introduces a suspension thermal sensor for linear jet gyroscope. Processing method of sensitive resistor

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  • Method for processing suspended silicon thermistor
  • Method for processing suspended silicon thermistor
  • Method for processing suspended silicon thermistor

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Embodiment Construction

[0026] Specific implementation examples

[0027] refer to Image 6 , the silicon suspended thermistor to be processed in the present invention is suspended on the back cavity through the cantilever beam at both ends, and its electrical signal is drawn out through the metal wire on the cantilever beam; the metal wire and the silicon thermistor are in ohmic contact. The processing method of the silicon suspended thermistor comprises the following steps:

[0028] Step 1, cleaning the SOI silicon wafer, removing the native oxide layer and organic contamination on the surface, and then drying; for the SOI silicon wafer used in this example, the device layer silicon 1 has a thickness of 50 μm, the buried oxide layer 2 has a thickness of 1 μm, and the base layer 3 Thickness is 400μm, such as figure 1 (a);

[0029] Step 2, using the SOI silicon wafer as the substrate, magnetron sputtering a layer of AL mask 4 with a thickness of 0.15 μm on the base layer 3 as a mask for etching the...

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Abstract

The invention discloses a method for processing a suspended silicon thermistor and belongs to the technical field of micro electro mechanical systems (MEMS). The method comprises the following steps of: firstly etching a back cavity, and then performing manufacturing of the suspended silicon thermistor and other metal conductors. Compared with the prior art, the invention has the advantages that 1 silicon serves as a heat-sensitive material, so that a resistance temperature coefficient of the thermistor is increased; 2. according to the method, the thermistor with suspended length of 1.3mm can be processed, the sensitivity and the response time of airflow detection and the yield of the thermistor are improved, an suspended distance is enlarged, and a millimeter scale is achieved; 3. the back cavity and the thermistor are sequentially etched in the processing process, and because the secondary protection is not required, process steps are simplified, and the yield is increased; and 4, the suspended thermistor is processed based on an standard MEMS (Micro-Electro-Mechanical Systems) process, and the mass production is easily realized.

Description

technical field [0001] The invention relates to a method in the technical field of micro-electromechanical systems, in particular to a method for processing a suspended silicon thermistor. Background technique [0002] Thermistors manufactured by MEMS can be widely used in the manufacture of sensitive probes for temperature sensors, flow rate sensors, shear stress sensors, and gas sensors. The silicon thermistor in the suspended silicon thermistor is suspended on the back cavity through the cantilever beam at both ends, and its electrical signal is drawn out through the metal wire on the cantilever beam; the metal wire and the silicon thermistor are in ohmic contact. The thermistor uses silicon as the heat-sensitive material. Compared with the thermistor made of metal as the heat-sensitive material, it has a higher temperature coefficient of resistance, and can be applied to various measurement tasks such as flow field temperature, flow velocity, and shear stress. Especiall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 常洪龙周平伟杨勇洪水金谢建兵袁广民
Owner NORTHWESTERN POLYTECHNICAL UNIV
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