The invention discloses a cleaning method for removing metal pollution or residuals of a SiC epitaxial wafer, and the method comprises the following steps: a, putting the SiC epitaxial wafer in mixed washing liquor, formed by the mixing of sulfuric acid and hydrogen peroxide, for immersing; b, cleaning the surface of the SiC epitaxial wafer through deionized water, and then putting the SiC epitaxial wafer in acetone for ultrasonic cleaning; c, cleaning the surface of the SiC epitaxial wafer through deionized water, and then putting the SiC epitaxial wafer in heated mixed washing liquor, formed by the mixing of ammonia water, hydrogen peroxide and deionized water, for immersing; d, , cleaning the surface of the SiC epitaxial wafer through deionized water, and then putting the SiC epitaxial wafer in heated mixed washing liquor, formed by the mixing of hydrochloric acid, hydrogen peroxide and deionized water, for immersing; e, sequentially cleaning the surface of the SiC epitaxial wafer through ozone water, ammonia water, high-purity nitrogen and deionized water; f, sequentially cleaning the surface of the SiC epitaxial wafer through ozone water, hydrofluoric acid liquor and ozone water; g, cleaning the surface of the SiC epitaxial wafer through deionized water, and rotating the SiC epitaxial wafer at a high speed for drying.