Novel method for modifying GaAs material surface

A gallium arsenide and modification technology, applied in the field of modification of the surface of gallium arsenide material, can solve the problems of contamination, difficult control of process accuracy, easy adhesion, etc., to avoid secondary contamination and good controllability performance and stability, the effect of simplifying process steps

Active Publication Date: 2016-04-20
XIAN LIXIN PHOTOELECTRIC SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods have certain disadvantages: Na 2 Na metal ions in S solution are easy to adhere to GaAs surface to form contamination
This method avoids the problems of stability and environmental pollution in wet passivation, but the surface defects introduced in the pretreatment process are relatively large, and the Si film formed is a polycrystalline material, which makes it difficult to control the process accuracy. poor repeatability

Method used

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  • Novel method for modifying GaAs material surface
  • Novel method for modifying GaAs material surface
  • Novel method for modifying GaAs material surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Step 1. Put the GaAs semiconductor laser bar into the vacuum chamber and pump the vacuum.

[0028] Step 2. Inject 30-100 sccm of Ar gas into the vacuum chamber.

[0029] Step 3. After the air pressure in the vacuum chamber is stabilized at 20-50mtorr, apply a radio frequency power of 10-70W.

[0030] Step 4. After 10-20 minutes, stop applying RF power, stop feeding Ar gas, and vacuum to 2*10^ -4 mtorr.

[0031] Step 5, feed Ar gas and NH into the vacuum chamber 3 Gas (ie corrosive gas) mixed gas, in which Ar gas 20-50sccm, NH 3 Gas 20-70sccm.

[0032] Step 6. After the air pressure in the chamber is stabilized at 20-50mtorr, apply a radio frequency power of 10-50W.

[0033] Step 7. After 5-10 minutes, stop applying RF power, stop feeding Ar gas and NH 3 Gas, vacuum to 2*10^ -4 mtorr.

[0034] Step 8, feed N into the vacuum chamber 2 Gas, the flow rate is 30-100sccm.

[0035] Step 9. After the air pressure in the vacuum chamber is stabilized at 20-50mtorr, appl...

Embodiment 2

[0042] Step 1. Put the GaAs epitaxial wafer into the vacuum chamber and pump the vacuum.

[0043] Step 2. Inject 30-100 sccm of Ar gas into the vacuum chamber.

[0044]Step 3. After the air pressure in the vacuum chamber is stabilized at 20-50mtorr, apply a radio frequency power of 10-70W.

[0045] Step 4. After 10-20 minutes, stop applying RF power, stop feeding Ar gas, and vacuum to 2*10^ -4 mtorr.

[0046] Step 5, feed oxygen and CCl into the vacuum chamber 2 f 2 Gas (that is, corrosive gas) mixed gas, wherein the oxygen flow range is 10-40sccm, and the CCl2F2 gas flow range is 30-100sccm.

[0047] Step 6. After the air pressure in the chamber is stabilized at 20-50mtorr, apply a radio frequency power of 10-50W.

[0048] Step 7. After 5-10 minutes, stop applying radio frequency power, and stop feeding oxygen and CCl2F2 gas.

[0049] Step 8, feed N into the vacuum chamber 2 Gas, the flow rate is 50-100sccm.

[0050] Step 9. After the air pressure in the vacuum chambe...

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Abstract

The invention provides a novel method for modifying a GaAs material surface. The method may stably and reliably reduce defects on the GaAs material surface, decreases a possibility of surface oxidation, and simplifies processing steps. The method comprises steps of: (1) placing a GaAs material to be processed in a vacuum chamber, adding inert gas into the vacuum chamber after the vacuum chamber is made vacuum , and forming stable plasma under the effect of a radiofrequency source to perform physical cleaning; (2) making the vacuum chamber vacuum, adding corrosive gas into the vacuum chamber, and forming stable plasma under the effect of the radiofrequency source, and enabling the plasma to react with an oxide layer on the surface of the material so as to chemically clean the surface of the GaAs material for removing the original oxide layer and impurities on the surface of the GaAs material and forming a Ga-enriched material surface; and (3) making the vacuum chamber vacuum, adding nitrogen into the chamber vacuum, and forming the stable plasma under the effect of the radiofrequency source in order to enable the plasma to react with Ga-enriched material surface to generate a GaN material passivation layer.

Description

technical field [0001] The invention relates to a method for modifying the surface of a gallium arsenide material. Background technique [0002] GaAs is a very important III-V semiconductor compound material. Semiconductor devices made of gallium arsenide have the advantages of high temperature and low temperature performance, low noise, and strong radiation resistance. At the same time, the electron mobility of GaAs material at room temperature is 8000 cm 2 / v*s is about six times the electron mobility of Si material at the same temperature, which provides a basis for GaAs materials to make high-frequency electronic devices. In addition, GaAs material is a direct band gap semiconductor material, so it is also an ideal optoelectronic material. [0003] Although GaAs material has many advantages, it also has some problems, which are related to the polarity of GaAs material. For example, the defect density on its surface is much higher than that of Si material, which makes ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02664
Inventor 李特吴建耀杨国文李宁
Owner XIAN LIXIN PHOTOELECTRIC SCI & TECH
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