The invention provides a manufacturing method of a vertical
ridge structure of a
semiconductor laser capable of accurately controlling the height. The manufacturing method comprises the following steps: growing a
semiconductor epitaxial film layer and an ESL; sequentially forming a primary
silicon dioxide
mask and a primary
photoresist mask on the epitaxial
wafer, and photoetching to form a periodic
ridge window; carrying out ICP
etching on the
silicon oxide mask; continuously performing ICP
etching on the epitaxial layer to a certain depth to form a narrow
ridge structure; removing the residual
photoresist; corroding the GaAs
contact layer to form an internal shrinkage structure; growing and carrying out ICP
etching on a
silicon dioxide mask for the second time; performing wet etching on the epitaxial film layer to the
corrosion barrier layer; after the mask is removed, growing a SiO2 current
blocking layer, and forming a secondary
photoresist mask pattern; and ICP etching is carried out to remove the current
blocking layer at the top of the GaAs, a current injection window is exposed, and manufacturing of the ridge-shaped structure is completed. A
dry etching and wet etching combined mode is adopted, the ridge height can be accurately controlled, the side wall is vertical, meanwhile, a current injection area on a ridge strip is reduced, and the current injection density is improved.