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Method for preparing titania film by using gas flow reaction sputtering under middle gas pressure and method for preparing solar cell

A solar cell and titanium dioxide technology, which is applied in sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problem of poor process repeatability and difficulty in obtaining stable and high-quality transparent conductive titanium dioxide film, etc. Problems, achieve the effect of reducing crystal defects, increasing the probability of collision, and improving conductivity

Inactive Publication Date: 2010-09-22
苏州羿日新能源有限公司
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Problems solved by technology

It is precisely because the magnetron sputtering method is difficult to control and the process repeatability is poor, it is difficult to obtain a stable and high-quality transparent conductive titanium dioxide film, making the preparation of TiO2 by magnetron sputtering 2 Thin films are very limited in solar cell applications

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  • Method for preparing titania film by using gas flow reaction sputtering under middle gas pressure and method for preparing solar cell
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  • Method for preparing titania film by using gas flow reaction sputtering under middle gas pressure and method for preparing solar cell

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Embodiment Construction

[0035] The present invention will be further described below in conjunction with accompanying drawing and embodiment:

[0036] The invention discloses a method for preparing titanium dioxide nano-films by using medium-pressure gas flow reaction sputtering, which uses a hollow cathode and high-flow high-speed argon to prevent the reaction gas from contacting the target surface and increase the pressure of the working gas in the sputtering reaction. This is achieved by reducing the energy of the particles. Therefore, when oxygen ions and neutral particles hit the substrate, they will not affect the TiO 2 film growth.

[0037] Specifically, it includes the following steps:

[0038] A), the glass substrate that is coated with transparent conductive film is put into the reaction chamber of vacuum sputter coating equipment, and the vacuum degree of reaction chamber is pumped to 10 -1 Pa, usually the transparent conductive film is SnO 2 or ZnO or InSnO thin film;

[0039]B), the...

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Abstract

The invention discloses a method for preparing a titania film by using gas flow reaction sputtering under a middle gas pressure and a method for preparing a solar cell. The preparation method for the titania film comprises the following steps of: A), placing a glass substrate plated with a transparent conducting film into a reaction chamber of vacuum sputtering coating equipment and vacuumizing the reaction chamber; and B), introducing a working gas into a target chamber between a pair of titanium targets which is oppositely arranged in a cathode device of the vacuum sputtering coating equipment, and introducing oxygen outside the target chamber, wherein the sputtering gas pressure of the working gas is 10 to 100 Pa, and a TIO2 film is formed on the transparent conducting film by sputtering deposition. The method improves the sputtering gas pressure, and prevents high-energy superoxide anions O- and neutral argon particles from bombarding the substrate so as to reduce crystal defects and improve the electrical conductivity and the thermal stability of the TIO2 film.

Description

technical field [0001] The invention relates to a method for reactively sputtering a titanium dioxide thin film and a process for preparing a solar battery. Background technique [0002] The front transparent conductive film of glass-based amorphous silicon or amorphous / microcrystalline silicon solar cells is mostly fluorine-doped tin oxide or doped zinc oxide. However, since the refractive index of these transparent films is 1.9-2.0 and that of amorphous silicon is 3.6-4.0, there is a large reflection loss of light at the interface between the transparent film and the amorphous silicon. In order to reduce reflection loss, a film may be inserted between the transparent conductive film and the amorphous silicon film. Its refractive index should be the geometric mean value of the transparent conductive film and the refractive index of amorphous silicon. And this layer of film must have a certain degree of conductivity. [0003] Titanium dioxide TiO 2 The thin film is a tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
Inventor 郭射宇
Owner 苏州羿日新能源有限公司
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