Reaction chamber and semiconductor processing equipment

Abstract

The invention provides a reaction chamber and semiconductor processing equipment, and the reaction chamber comprises a substrate, a tray borne on the substrate, a cover plate and a lining. The tray comprises a bearing position for bearing the substrate, and the cover plate is used for covering the area, except the bearing position, of the tray. The lining is arranged around the inner side of the side wall of the reaction chamber, a supporting part is arranged on the lining, and the supporting part is used for supporting the cover plate to separate the cover plate from the tray when the substrate descends from the process position. According to the reaction chamber provided by the invention, ions generated by process gas can be prevented from bombarding the tray, and pollutants are prevented from being generated, so that the etching rate and uniformity of pre-cleaning are improved, and the process capacity and process effect are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor process equipment, in particular, to a reaction chamber and semiconductor processing equipment. Background technique [0002] At present, in the semiconductor process, the substrate (Wafer) generally needs to be pre-cleaned (Preclean) before the film growth process to remove the pollutants on the surface of the substrate to ensure that the subsequent growth of the film has better adhesion. The core indicators of the pre-cleaning process are etching rate, uniformity and selectivity ratio. Capacitively Coupled Plasma Preclean (CCP Preclean, Capacitively Coupled Plasmas Preclean) is a common equipment for the pre-cleaning process. [0003] Such as figure 1 As shown, an existing capacitively coupled plasma pre-cleaning device includes a base 11, a lower lining 12, an upper lining 13 and a metal tray 14, wherein the metal tray 14 is provided with a groove for placing a substrate, and Wh...

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Problems solved by technology

[0004] However, when the ions produced by the process gas under the action of the electric field bombard the surface of the substrate, they will also bombard the metal surface outside the groove on the metal tray 14, and the metal particles produced will fall on the surface of the substrate to form new pollutants.

For this reason, it is also necessary to increase the cleaning step to bombard the newly formed contaminants, resulting in a decrease in the etching rate of the pre-cleaning process and affecting the process throughput

In addition, there are more metal particles falling near the edge of the substrate than metal ions falling on the center of the substrate, which will reduce the etching uniformity of the pre-cleaning process and affect the process effect

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