The invention relates to an
etching apex non-doped intrinsic layer asymmetrical
metal film
vertical cavity surface emitting laser and a preparation method thereof. The invention comprises a Bragg reflector, a high resistive layer, an
electrode, a substrate and a
quantum well active region. The upper surface is etched with a round
metal reflection film, a
metal film lead, a
contact layer of the metal film and an upper
electrode and the upper
electrode; the lower surface of the substrate is provided with the round metal reflection film, a lower surface metal film lead and a lower
surface electrode. By introducing the non-doped intrinsic layer to etch the current aperture and combining the upper surface with the
substrate surface to etch a metal film asymmetrical structure in order to implement the restriction to current and
optical field, the invention has the efficacies of the electrode and the reflector of the metal film, simplifies a vertical cavity emitting
laser array integration process, reduces the logarithm of
distributed Bragg reflector, restricts the
diffusion area of the current, improves the photoelectric
coupling efficiency of injected current, avoids
proton bombardment or respective
oxidation process and is beneficial for integration as the intrinsic high-resistive layer and a
chip implement the grown in one operation.