A method for determining a thermal impedance of a semiconductor device

A technology of semiconductor and thermal impedance, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as consumption, and achieve the effect of cost realization and low cost

Inactive Publication Date: 2015-03-25
ROBERT BOSCH GMBH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is cumbersome and expensive to integrate the temperature sensor into the semiconductor device
Monitoring of the welding section can no longer be performed in the event of a temperature sensor failure

Method used

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  • A method for determining a thermal impedance of a semiconductor device
  • A method for determining a thermal impedance of a semiconductor device

Examples

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Embodiment Construction

[0047] exist figure 1 , a four-quadrant regulator is shown schematically and denoted by 10 . A preferred embodiment of the method according to the invention is explained below by way of example with the aid of a four-quadrant controller 10 . The invention should not be restricted here to four-quadrant regulators, but is applicable to semiconductor components in any desired circuit.

[0048] The four-quadrant regulator has eight semiconductor components H1 to H8 , a voltage source V, an inductance L and a current measuring device I. In this particular example, the four-quadrant regulator is designed as an engine control circuit in an engine control unit of a motor vehicle and is used in particular to provide an excitation current for a rotor winding of an electric motor of the motor vehicle.

[0049] In the following example, the thermal connection of the material layers of the semiconductor component H1 shall be checked. This is carried out by means of a preferred embodimen...

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Abstract

The invention relates to a method for determining a thermal impedance of a semiconductor device, wherein the semiconductor device is energized with a warm-up current (101, 201), a power loss of the semiconductor device is determined, a voltage drop dependent on a temperature of the semiconductor device is detected on the semiconductor device (103, 205), the temperature of the semiconductor device over time is determined as a warm-up curve (104, 207), and the thermal impedance of the semiconductor device is determined as a quotient of the determined temperature and the determined power loss (106, 208).

Description

technical field [0001] The invention relates to a method for determining the thermal resistance of a semiconductor device. Background technique [0002] Semiconductor components such as diodes or transistors are increasingly being used in technical products. The thermal connection between the individual material layers of the semiconductor component degrades due to the different thermal properties between the individual material layers of the construction and connection technology (AVT) and the active and passive temperature rise during operation. [0003] Production-dependent cracks or enlargements of lumens (air pockets in the material) can form which mostly remain undetected until the semiconductor component fails. This leads to an amplification of the thermal resistance and (in the case of a positive temperature coefficient) to an increase in the induced power loss. [0004] Semiconductor devices are mostly soldered to a base plate that acts as a heat sink. In this ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/66
CPCG01K7/01G01K2217/00G01R31/2619G01R31/2628H01L23/345H01L2924/0002H01L2924/00
Inventor O.D.科勒J.霍姆特M.里希特
Owner ROBERT BOSCH GMBH
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