852 results about "Voltage clamp" patented technology

Methods and apparatus for direct detection of chemical reactions are provided. In a preferred embodiment, electric charge perturbations of the local environment during enzyme-catalyzed reactions are sensed by an electrode system with an immobilized target molecule. The target molecule is preferably DNA. The charge perturbation caused by the polymerase reaction can uniquely identify a DNA sequence. The polymerization process generates local perturbations of charge in the solution near the electrode surface and induces a charge in a polarazible gold electrode. This event is detected as a transient current by a voltage clamp amplifier. Detection of single nucleotides in a sequence can be determined by dispensing individual dNTPs to the electrode solution and detecting the charge perturbations. Alternatively, multiple bases can be determined at the same time using a mix of all dNTPs with subsequent analysis of the resulting signal. The initial enzyme attachment to the DNA molecule can be detected prior to polymerization, with electrode capacitance measurement using the same voltage-clamp amplifier. This technique and device may be adapted to other reaction determinations, such as enzymatic reactions, other electrode configurations, and other amplifying circuits.

The present invention relates to the elucidation that TRPML3 is involved in salty taste perception in primates including humans and likely other mammals and based thereon high-throughput mammalian and medium-throughput oocyte-based electrophysiological assays for identifying human TRPML3 modulators, preferably TRPML3 enhancers. Compounds that modulate TRPML3 function in the assay are expected to affect salty taste in humans. The inventive electrophysiological assays, such as the two-electrode voltage-clamp technique, facilitate the identification of compounds which specifically modulate human TRPML3. The assays of the invention provide a robust screen useful to detect compounds that facilitate (enhance) or inhibit TRPML3 function. Compounds that enhance or block TRPML3 channel activity should thereby modulate salty taste. In addition, these compounds may be used to regulate sodium excretion, urinary output and other biological functions relating to sodium levels and TRPML3 related functions.

The clamp circuit clamps an input voltage at prescribed higher and lower clamp voltages which are stabilized under a temperature fluctuation. Transistors Q12 and Q14 are switched on in their linear region. In a lower voltage clamp circuit 18, an Vin detecting circuit 20 outputs Va1 by level-shifting Vin by Q13 and voltage-divides by series resistance circuit 23 the level-shifted Vin, while a reference voltage generating circuit 21 outputs Vr1 by level-shifting 0 V by Q15 and voltage-divides by series resistance circuit 25 the level-shifted voltage. Q11 is switched on, when a comparator 22 determines that Va1 descends and goes across Vr1. Here, Q12 is of the same characteristics as Q14, while Q13is of the same characteristics as Q15. Further, the resistance of the circuits 23 is the same as that of the circuit 25. The higher voltage clamp circuit 19 is similar to the circuit 18.

A voltage clamp protection circuit to protect against overvoltage conditions where there is insufficient current to blow a fuse. The voltage clamp protection circuit includes a voltage clamp and a thermal cutoff. The voltage clamp clamps any overvoltage to a clamping voltage. If an overvoltage condition persists for too long the voltage clamp dissipates a sufficient amount of heat to activate the thermal cutoff creating an open circuit that protects the rest of the circuit. The voltage clamp protection circuit may be used in combination with a variety of other protection circuits to provide increased protection.

A power control circuit for a power amplifier comprises a voltage regulator having a first input configured to receive a envelope control signal, a second input configured to receive a feedback signal, and a third input configured to receive a voltage clamp signal; and a clamp voltage reference circuit configured to generate the voltage clamp signal.

A power gated semiconductor integrated circuit comprises: (1) logic circuit to be power gated, said logic circuit having a virtual ground rail; (2) footer device disposed between said virtual ground rail and a ground rail for reducing power consumption of said logic circuit; and (3) virtual rail voltage clamp disposed electrically in parallel with said footer device for limiting the voltage at the virtual ground rail, the virtual rail voltage clamp comprising at least one NFET. A total of Nf NFETs are connected to the virtual ground rail of the integrated circuit for use as both virtual rail voltage clamps and footer devices. A quantity of Nmax-VC NFETs are scanned and perform the function of voltage clamps and the remaining (Nf−Nmax-VC) NFETs perform power gating. Manufacturing variability immunity and tuning of the variability immunity is achieved by adjusting the quantity Nmax-VC based upon testing of the manufactured integrated circuit.

The DC-DC converter connects a first and a second switching circuit for converting power mutually between direct current and alternating current respectively to a first DC power source and a second DC power source and has a transformer between the AC terminals thereof. Here, between the AC terminals of the second switching circuit and the negative pole terminal of the DC power source, a voltage clamp circuit composed of a series unit of switching devices with a reverse parallel diode and a clamp condenser is connected.An isolated bidirectional DC-DC converter which prevents a reduction in a circulating current at time of buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization is provided.

The invention provides a current detection method based on parasitic inductance and application of the current detection method. Voltage signals on two ends of the parasitic inductance at a connecting line between a source pin of a switch tube and a power ground are detected to judge whether overcurrent occurs, an overcurrent turn-off instruction is sent through a logic control circuit, and the grid-source voltage of the switch tube is limited to protect the switch tube through a grid voltage clamp circuit when the overcurrent condition occurs. According to the method and the application thereof, a soft turn-off function is integrated, the speed for overcurrent turn-off is slowed down, the voltage spike at the turn-off moment is reduced, and the rapidity of short circuit protection of a SiC device is realized while an EMI (Electro-Magnetic Interference) problem is reduced.

An open drain driver (7) selectively switches a MOSFET switch (MN1) which is passively held in the conducting state into the non-conducting state. The MOSFET switch (MN1) switches an AC analogue input signal on a main input terminal (3) to a main output terminal (4) and the gate of the MOSFET switch (MN1) is AC coupled by a capacitor (C1) to the drain thereof. The open drain driver (7) comprises a first MOSFET (MN2) and a second MOSFET (MN3) through which the gate of the MOSFET switch (MN1) is pulled to ground (Vss). The gate of the first MOSFET (MN2) is coupled to the supply voltage (VDD) for maintaining the first MOSFET (MN2) in the open state. A control signal is applied to the gate of the second MOSFET (MN3) for selectively operating the open drain driver (7) in the conducting state for operating the MOSFET switch (MN1) in the non-conducting state. When the second MOSFET (MN3) is in the non-conducting state, the first MOSFET (MN2) remains in the conducting state until the voltage on a coupling node (9) between the first and second MOSFETs (MN2,MN3) equals the difference between its gate voltage and its threshold voltage, at which stage, any over-voltages applied to the gate of the MOSFET switch (MN1) are divided between the first and second MOSFETs (MN2,MN3). A coupling diode (D1) coupling the coupling node (9) to the supply voltage (VDD) clamps the voltage on the coupling node (9) at the supply voltage (VDD) plus the conducting voltage of the diode (D1), in the event of the voltage on the coupling node (9) rising after the first MOSFET (MN2) has gone into the non-conducting state. The coupling node (9) may be capacitively coupled to the supply voltage (VDD) by a coupling capacitor instead of or as well as the diode (D1) for limiting the voltage on the coupling node (9).

A bi-directional DC-DC converter has a transformer for connecting a voltage type full bridge circuit connected to a first power source and a current type switching circuit connected to a second power source. A voltage clamping circuit constructed by switching elements and a clamping capacitor is connected to the current type switching circuit. The converter has a control circuit for cooperatively making switching elements operative so as to control a current flowing in a resonance reactor.