Defectivity-immune technique of implementing MIM-based decoupling capacitors
A capacitor and power supply decoupling technology, applied in the direction of electric solid-state devices, instruments, circuits, etc., can solve the problems of low defect rate, lower device output and/or reliability, etc.
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[0021] Using the gate dielectric layer as the capacitor dielectric, the defectivity of DECAP cells at the transistor layer is relatively low. This is because the decoupling capacitors are fabricated using the same processes used for standard CMOS transistors, which include high-quality gate dielectric layers. Therefore, the yield loss and / or current leakage of a design utilizing this DECAP is relatively low.
[0022] However, the interconnect layers used to form MiM-based DECAPs are generally more susceptible to processing defects that can lead to low-resistance paths (sometimes referred to herein as short circuits) between MiM DECAP levels. These deficiencies may reduce the overall yield and reliability of products utilizing the MiM DECAP. A short circuit through the MiM capacitor may cause a high current between the current source node and the ground node, thereby compromising the functionality of the entire device.
[0023] The present disclosure introduces a simple and n...
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