The invention provides a method for forming an NMOS (N-channel
Metal Oxide Semiconductor)
transistor. The method comprises the following steps of: providing a substrate and a grid structure located on the substrate; taking the grid structure as a
mask to carry out
ion implantation on the substrate, and forming a
source area and a drain area in the substrate at the both sides of the grid structure; forming a stopping layer on the exposed surfaces of the substrate and the grid structure; forming a stress layer on the stopping layer, wherein the stopping layer is used for preventing
hydrogen elements used in the forming environment of the stress layer from entering the
source area and the drain area; carrying out heat treatment on the
source area and the drain area; and removing the stopping layer and the strain layer. According to the method disclosed by the invention, the compact stopping layer is formed on the surfaces of the substrate and the grid structure before the stress layer is formed, so as to prevent the
hydrogen elements used in the forming environment of the stress layer from entering the source area / drain area in the substrate. Therefore, the problem of descending of
threshold voltage, caused when the
diffusion of doped ions in the source area / drain area is enhanced by the
hydrogen elements, is solved, the reliability of the
threshold voltage is improved, and the property reliability of the NMOS
transistor is further improved.