Flash memory and erasing method thereof, electronic system and computer storage medium

Abstract

The invention provides a flash memory and an erasing method thereof, an electronic system and a computer storage medium. The flash memory adds a corresponding information bit for each storage block so as to indicate whether the storage block is erased or not before power failure, which memory block in a flash memory is performing erasing operation can be easily known through the information bits before power failure, and after the flash memory is powered on next time, whether the memory block in the flash memory is not erased before power failure or not can be checked by reading the information stored in the information bits corresponding to the memory block, and further reprogramming operation is performed on each storage block in the power-on process of the flash memory, so that the problems that the threshold voltage VT of some storage units is reduced and data reading of the storage units is failed due to erasing stress of erasing a certain storage block by block in the flash memory can be avoided.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a flash memory, an erasing method thereof, an electronic system and a computer storage medium. Background technique [0002] Flash memory is a long-life non-volatile memory (it can still maintain the stored data information in the case of power failure), which is mainly composed of multiple storage blocks (BLOCK) in the storage cell array, and each storage block With multiple memory cells, these memory blocks are usually arranged in the same well and share the same bit line. [0003] Existing flash memory erasing methods are usually based on storage blocks, and specifically, please refer to figure 1 , the steps of erasing one of the storage block BLOCK<#> include: S10, pre-programming (pre-program) all the storage cells of the storage block BLOCK<#>; S11, using erase verification (erase verify) Erase all the storage units of the storage block BLOCK<#> in ...

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Problems solved by technology

[0004] In the above-mentioned flash memory erasing method, if the power supply is turned off suddenly during the process of erasing the memory block BLOCK, the erasing operation of the memory block BLOCK will only be carried out to S10~S12. A certain step (that is, the erase operation of the memory block BLOCK is not completed), which may cause the threshold voltage VT of some memory cells in other memory blocks to drop due to the erase stress. After the flash memory is powered on next time, when When reading the data of the memory cells in other memory blocks, the memory cells in these memory blocks whose threshold voltage VT drops due to erasing stress will have the problem of data read failure (fail)

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