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Method for operating non-volatile memory element

An operation method and storage unit technology, applied in the field of operation of non-volatile storage elements, can solve the problems of difficult miniaturization of elements, reduction of element reliability, power consumption, etc.

Active Publication Date: 2009-06-10
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Since the tunneling oxide layer in the current non-volatile memory is formed on the channel, the bird's beak phenomenon caused by the shallow trench isolation structure seriously affects the tunneling oxide layer, which reduces the reliability of the component. Therefore, the component is not easy to miniaturize
On the other hand, current non-volatile memories that induce electron tunneling to program or erase operations require high voltages and are therefore power hungry and need to be improved in speed

Method used

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  • Method for operating non-volatile memory element
  • Method for operating non-volatile memory element
  • Method for operating non-volatile memory element

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Embodiment Construction

[0058] Reference will now be made in detail to the present invention and its preferred embodiments, examples of which are illustrated in the accompanying drawings. It should be noted that the drawings are in greatly simplified form and are not drawn to exact scale. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In light of the disclosure herein, directional terms such as top, bottom, left, right, upper, lower, above, below, under, rear, and The front part is for use corresponding to the accompanying drawings. Such directional terms, in conjunction with the following description of the figures, should not be construed as limiting the scope of the invention in any way not expressly set forth in the appended claims. Although the disclosure herein refers to certain illustrative embodiments, it should be understood that these embodiments are by way of example and not limitation, and that the processes and str...

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Abstract

A method for operating nonvolatile memory element includes exerting negative bias at gate electrode, utilizing-FN tunneling mechanism to make electron inject into electric charge storage layer from gate electrode of memory unit and via multiplayer tunneling dielectric structure for causing initial voltage-rise of memory unit, exerting a positive bias on gate electrode, utilizing + FN tunneling mechanism to make electric cavity inject into said electric charge layer from said gate electrode of memory unit and via said tunneling dielectric structure for causing initial voltage-drop of memory unit.

Description

technical field [0001] The present invention relates to a method for operating a storage element, and in particular to a method for operating a non-volatile memory element. Background technique [0002] A non-volatile memory (Non-volatile memory, “NVM”) is a semiconductor memory capable of continuously storing information after power is removed. NVM includes mask read-only memory (Mask ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM) and flash memory (Flash memory). Non-volatile memory is a type of memory widely used in the semiconductor industry and developed to prevent loss of programmed data. In general, non-volatile memory can be programmed, read, and / or erased based on the end-use requirements of the device, and can store programmed data for extended periods of time. [0003] Flash memory generally includes an array of memory cells arranged in rows and columns. Ea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/04G11C16/06G11C11/56H01L29/792
CPCG11C16/0466G11C16/0416H01L27/11521G11C16/0483H01L27/115H10B69/00H10B41/30
Inventor 吕函庭赖二琨王嗣裕
Owner MACRONIX INT CO LTD
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