Manufacturing method of NROM and device thereof
A manufacturing method and control gate technology, which can be used in the manufacture of electrical solid-state devices, semiconductor devices, and semiconductor/solid-state devices, etc., can solve problems such as interference, shortening of channel length, and drop in device threshold voltage, so as to overcome the shortening of channel length, The effect of extending the effective channel length
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[0034] In order to understand the technical content of the present invention more clearly, specific embodiments are given and described as follows in conjunction with the accompanying drawings.
[0035] see Figure 2A ~ 2K , Figure 2A ~ 2K It is a schematic cross-sectional view of various steps in the manufacturing method of the NROM in the embodiment of the present invention.
[0036] First, doping ions on the silicon wafer as required to form a P-type or N-type ion trap semiconductor substrate 1, and on the semiconductor substrate 1 through ion implantation, respectively form the source 2 and the drain 3, and then through high temperature An insulating layer 4 is formed on the surface of the semiconductor substrate 1 between the source electrode 2 and the drain electrode 3 by oxidation thermal growth or deposition, such as Figure 2A As shown, in this embodiment, the insulating layer 4 is silicon dioxide.
[0037] In this embodiment, it is necessary to etch a shallow tre...
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