Thin film transistor, preparation method thereof, array substrate, display panel and device

Abstract

The invention belongs to the technical field of display and discloses a thin film transistor, a preparation method thereof, an array substrate, a display panel and a display device. The thin film transistor comprises a substrate, as well as an active layer and a source-drain electrode which are sequentially stacked on the substrate; and the projection of a source electrode in the source-drain electrode on the substrate is overlapped with the projection of part of the edge of the active layer on the substrate. According to the thin film transistor, the illumination-receiving area of the activelayer is small, so that the generation of holes can be effectively reduced, the concentration of photon-generated carriers under an illumination condition is reduced, and therefore, the defect statessuch as hole capture probability increase and threshold voltage reduction, of the TFT working in a high-temperature illumination environment are avoided, and the performance of the TFT device in the high-temperature illumination environment is improved. When the thin film transistor is applied to the display panel, the working performance of the display product in a high-temperature environment can be improved, and the reliability of the display product is enhanced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof, an array substrate, a display panel and a device. Background technique [0002] In recent years, with the expansion of display panel production capacity, the consumer market has grown slowly. Therefore, finding new fast-growing application fields has become an urgent need for major manufacturers. With the rapid development of the automobile market and the advent of the Internet of Vehicles era, the field of vehicle display has obviously become the third largest application market for small and medium-sized panels after the mobile phone and tablet market. [0003] Considering the working environment, the on-board display must be able to withstand the high and low temperature difference between -30°C and +85°C; and working in a high-temperature environment for a long time will increase the hole capture probability of the TFT...

AI Technical Summary

Problems solved by technology

[0003] Considering the working environment, the on-board display must be able to withstand the high and low temperature difference between -30°C and +85°C; and working in a high-temperature environment for a long time will increase the hole capture probability of the TFT and reduce the device threshold voltage (Vth), which will lead to data Line (Data) The leakage current flowing from the line to the pixel electrode increases, and vertical crosstalk occurs

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