Method for recovering threshold voltage reduction of MOSFET after irradiation
A technology of threshold voltage and irradiation, which is applied in the field of MOSFET, can solve the problems of low temperature threshold voltage, increase of turn-off loss, false turn-on of MOSFET, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0028] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0029] see Figure 4 , the present invention provides a method for recovering the lowering of MOSFET threshold voltage after irradiation, the method comprising the following steps: Step 1: providing a MOSFET, the MOSFET has undergone irradiation treatment; A voltage of a certain value is applied to the drain for a period of time, so that some electrons enter the oxide layer of the gate of the MOSFET and recombine with the trapped holes.
[0030] see Figure 5 , Figure 5 is a schematic diagram of an embodiment of applying a voltage to the gate of the MOSFET, in this embodiment, Figure 5 Among them, 1c is the gate of the MOSFET, and 2c is the oxide layer of the gate of the MOSFET. For the MOSFET of the silicon device, the oxide layer 2c of the gate is SiO 2 , the condition of the voltage applied to the gate 1c of the MOSFET can be: V gs ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
strength | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com