SiC power tube threshold voltage degradation model under temperature and voltage stress

Abstract

The invention discloses a SiC power tube threshold voltage degradation model under temperature and voltage stress. The SiC power tube threshold voltage degradation model under temperature and voltagestress comprises the specific steps: firstly, establishing a single stress degradation model of SiC power MOSFET threshold voltage under temperature stress and voltage stress according to an Arrheniusmodel, an inverse power law model and a degradation time model; and then fusing the obtained two single-stress threshold voltage degradation models into a threshold voltage degradation model of the SiC power MOSFET under temperature and voltage coupling dual stress by using three radial basis neurons. According to the method, the single-stress physical degradation model of the threshold voltage of the SiC power MOSFET is combined with the radial basis neurons, and the threshold voltage degradation model with higher universality under the working condition of considering both temperature and voltage is established, so that the degradation trend of the SiC power MOSFET can be accurately evaluated.

Description

technical field [0001] The invention relates to a threshold voltage degradation model of a SiC power tube under temperature and voltage stress, belonging to the fields of reliability evaluation and component degradation. Background technique [0002] With the continuous improvement and improvement of power semiconductor devices in terms of structural design, process flow and material quality, power switch tubes have been widely used in circuit systems such as photovoltaic inverters and switching power supplies. Performance limitations have approached intrinsic limits in terms of voltage blocking capability, switching frequency, and control bandwidth. The third-generation semiconductor materials represented by wide bandgap materials such as silicon carbide (SiC) have unique properties such as large bandgap width, high breakdown electric field, and small dielectric constant. It is an ideal substitute material for electronic devices, making it attract much attention in fields ...

AI Technical Summary

Problems solved by technology

The coupling correlation between stresses will lead to more complex variation trends of device characteristic parameters, and it is not accurate to simply combine the parameter degradation models under single stress to obtain multi-stress device parameter degradation models

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