Threshold voltage degradation measuring circuit

A threshold voltage and measurement circuit technology, applied in the direction of measuring electrical variables, measuring current/voltage, measuring devices, etc., can solve the problems of complex threshold voltage degradation measurement process, threshold voltage degradation, high equipment cost, etc., to achieve simple structure and save time , the effect of convenient operation

Active Publication Date: 2015-01-21
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the shortcomings of the prior art, the present invention provides a threshold voltage degradation measurement circuit in order to solve the problems of complex threshold voltage degradation measurement process and high equipment cost of MOS devices in the prior art

Method used

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  • Threshold voltage degradation measuring circuit

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Embodiment 1

[0023] In Embodiment 1 of FIG. 1( a ), two PMOS transistors connected in series are taken as an example for illustration. Wherein, the first PMOS transistor MP1 is the tube under test, and the purpose of the circuit of the present invention is to determine the degradation of the threshold voltage of the tube under test MP1 through the voltage change of the output terminal OUT during normal operation.

[0024] Specifically, the gate of the first PMOS transistor MP1 is connected to the first DC voltage Vb1, the source and the substrate are simultaneously connected to the source voltage (in Embodiment 1, the source voltage is the power supply voltage VDD), and the drain is connected to the output terminal OUT; The gate and drain of the second PMOS transistor MP2 are connected to the second DC voltage Vb2 at the same time, and the source and substrate are connected to the output terminal OUT at the same time.

[0025] In the present invention, in order to enable the circuit to rea...

Embodiment 2

[0036] In Embodiment 2 of FIG. 1( b ), two NMOS transistors connected in series are taken as an example for illustration. Wherein, the first NMOS transistor MN1 is the tube under test, and the purpose of the circuit of the present invention is to determine the threshold voltage degradation of the tube under test MN1 through the voltage change of the output terminal OUT during normal operation.

[0037] Specifically, the gate of the first NMOS transistor MN1 is connected to the first DC voltage Vb1, the source and substrate are grounded at the same time, and the drain is connected to the output terminal OUT; the gate and drain of the second NMOS transistor MN2 are connected to the second DC voltage at the same time Vb2, the source and the substrate are connected to the output terminal OUT at the same time.

[0038] In the present invention, in order to enable the circuit to realize the function of testing the degradation of the threshold voltage of the first NMOS transistor, it...

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Abstract

The invention relates to the technical field of integrated circuits and provides a threshold voltage degradation measuring circuit. The circuit comprises two MOS (Metal Oxide Semiconductor) tubes which are connected in series, wherein the first MOS tube is a detected tube; a grid electrode of the first MOS tube is connected with first direct-current voltage, a source electrode and a substrate of the first MOS tube are simultaneously connected with source electrode voltage, and a drain electrode of the first MOS tube is connected with an output end; a grid electrode and a drain electrode of the second MOS tube are simultaneously connected with second direct-current voltage, and a source electrode and a substrate of the second MOS tube are simultaneously connected with the output end. According to the scheme disclosed by the invention, the threshold voltage degradation measuring circuit with a simple structure is provided; the circuit only comprises the two MOS tubes which are connected in series and the threshold voltage degradation condition of the tube to be detected can be directly measured by only measuring the voltage change of the output end; and the circuit only relates to the obtaining of one physical amount and does not need to carry out secondary process and analysis, so that the technical scheme has the advantages of simple structure, convenience for operation, time-saving property, accurate and direct results and easiness in implementation.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a threshold voltage degradation measurement circuit. Background technique [0002] With the continuous development of the integrated circuit industry, the size of the device is continuously reduced, and the reliability design of the circuit is becoming more and more complicated. Due to the increase in the integration of chips, the thickness of the oxide layer has entered the nanometer level, and the operating voltage has been continuously reduced. A slight change in the voltage may have a fatal impact on the device, which makes the reliability of the circuit more and more prominent. Among them, oxide layer breakdown and deep submicron MOS (Metal-Oxide-Semiconductor, metal-oxide-semiconductor) device characteristic degradation are the two most important research issues in terms of device reliability, both of which have a great impact on the life of the device. all pla...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00
Inventor 洪杰何燕冬张钢刚张兴
Owner PEKING UNIV
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