33 results about "Oxide electronics" patented technology

The invention discloses a Spiro-OMeTAD / PbS composite hole transport layer based perovskite solar cell and a preparation method therefor. The perovskite solar cell comprises a transparent conductive substrate, an oxide electron transport layer, a perovskite solar light absorption layer, the Spiro-OMeTAD / PbS composite hole transport layer and a metal electrode. The perovskite thin film solar cell adopts a simple process; a lead sulfide thin film can be prepared by a large-area evaporation method; and the lead sulfide thin film can be inserted between the Spiro-OMeTAD and the metal electrode layer to be used as a buffer layer. The Spiro-OMeTAD / PbS composite hole transport layer based perovskite solar cell achieves a high photoelectric conversion efficiency which is as high as 15.11%; the lead sulfide, which is used as the buffer layer between the hole transport layer and the metal electrode, has higher hole mobility, and higher humidity stability and light and heat stability, so that the recombination of electron-hole pairs can be reduced; meanwhile, the stability of the cell can be improved; compared with other buffer layer materials, the lead sulfide can protect a device and improve the performance of the device as well; and therefore, a positive promotion effect is realized on the industrial development of the solar cell.

The invention discloses a perovskite solar cell based on a Spiro-OMeTAD / CuxS composite hole transport layer and a preparation method thereof. The solar cell comprises a transparent conductive substrate, an oxide electron transport layer, a perovskite light absorption layer, a composite hole transport layer, and metal electrodes. The composite hole transport layer is obtained by the following steps: spin-coating a perovskite light absorption layer with a Spiro-OMeTAD layer, and depositing high-purity copper sulfide powder on the Spiro-OMeTAD layer through vacuum thermal evaporation to get a composite hole transport layer composed of a p-type CuxS film and a Spiro-OMeTAD layer, wherein 1<=x<=2. The hole carrier mobility of the composite hole transport layer can be up to 0.1cm<2>V.s<-1>, the composite hole transport layer is very hydrophobic, the contact angle is up to 92 degrees, and the water stability of devices is greatly improved. By employing the composite hole transport layer, the photoelectric conversion efficiency of planar perovskite film cells can be up to 14%, and the attenuation of devices after 1000-hour use is less than 10%, which are better than those of devices employing a Spiro-OMeTAD or CuxS hole transport layer alone.

The invention discloses a novel ternary composite cathode material for a medium and low temperature solid oxide fuel cell, which comprises an oxygen ion conductor oxide, an electronic-oxygen ion mixed conductor oxide and an oxygen catalytic reduction active matter. The material is characterized in that: the cathode material taking perovskite structured oxygen ion and electronic mixed conductor as the main body has the main function of catalytically reducing the gaseous oxygen at the surface as oxygen ions and transmitting the oxygen ions in an manner of bulk phase to the interface between an electrolyte and the cathode; the conductivity of the oxygen ions is improved by adding the oxygen ion conductor, thereby improving the bulk phase transmission speed of the oxygen ions; the speed of the surface oxygen exchange of the cathode material is obviously increased by adding the oxygen catalytic reduction active matter, thereby greatly enhancing the catalytic activity of the surface oxygen of the cathode material. All effective components of the ternary composite cathode material are synthesized by adopting nitrate by an EDTA-citric acid complex method. Shown in single cell tests, the ternary composite cathode material shows not only excellent comprehensive performance but also excellent compatibility among all the effective components.

The invention discloses a perovskite solar cell with a high-quality metal oxide electron transport layer and a preparation method thereof. The perovskite solar cell comprises a glass substrate, a transparent conductive oxide electrode, a metal oxide electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode, wherein the transparent conductive oxide electrode, the metal oxide electron transport layer, the perovskite light absorption layer, the hole transport layer and the metal electrode are sequentially arranged on the glass substrate is a stacked manner, the transparent conductive oxide electrode realizes fluorine doping through fluorine-based plasma treatment, the metal oxide electron transport layer realizes fluorine doping through fluorine-based plasma treatment, and the fluorine-based plasma is generated by bombarding a fluorine-containing gas with a plasma. The perovskite solar cell is simple in process, good in uniformity and good in repeatability, and the perovskite solar cell is high in efficiency.

The invention relates to a novel full-inorganic oxide high-efficiency quantum dot solar battery and a manufacturing method thereof. The battery consists of a PbSe / CdSe nuclear shell quantum dot film, a NiO film, a ZnO nano film, an anode and a cathode, wherein the NiO film serves as a collecting layer of holes; the ZnO nano film serves as a collecting layer of electrons; the PbSe / CdSe nuclear shell quantum dot film and a ZnO nano film interface constitute a heterojunction, formed potential difference helps photoproduction electrons to migrate in to the collecting layer of oxide electrons from the PbSe / CdSe nuclear shell quantum dot film, and the PbSe / CdSe nuclear shell quantum dot film and a NiO film interface constitute a heterojunction; the anode is an ITO (indium tin oxide) electrode; and the cathode is an Ag electrode. The manufacturing method comprises the following steps: 1, preparation of the NiO film; 2, synthesis and film preparation of a PbSe / CdSe nuclear shell quantum dot; 3, preparation of the ZnO nano film; and 4, evaporation of the electrodes.

Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

The invention belongs to the technical field of organic solar cell device design and preparation and especially relates to an inverted bulk heterojunction organic solar cell of which active layer is equipped with a three-dimensional structure, and a preparation method. The three-dimensional structure is embossed by employing a PDMS template. The inverted bulk heterojunction organic solar cell is composed of a cathode layer, an electron transfer layer, the active layer, a hole transfer layer and an anode layer. The cathode layer is indium tin oxide ITO. The electron transfer layer is ZnO with thickness of 10+ / -0.2 nanometers. The active layer is PTB7:PC <70>BM with the thickness of 100+ / -0.2 nanometers. The hole transfer layer is MoO <3> with the thickness of 3+ / -0.2 nanometers. The anode layer is silver with the thickness of 100+ / -0.2 nanometers. Three-dimensional patterns embossed by employing the PDMS template are arranged on the active layer. The invention also discloses a specific preparation method.

The invention discloses a solar cell containing perovskite material and a preparation method thereof. The perovskite solar cell comprises a light transmission layer, a transparent electrode layer, a transition layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The transition layer is an oxide of nickel. The electron transport layer is a quaternary oxide. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by fullerene derivative. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 20 percent, and is suitable for batch production.

Growth of single- and few-layer macroscopically continuous graphene films on Co3O4(111) by molecular beam epitaxy (MBE) has been characterized using low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS). MBE of Co on sapphire(0001) at 750 K followed by annealing in UHV (1000 K) results in ˜3 monolayers (ML) of Co3O4(111) due to O segregation from the bulk. Subsequent MBE of C at 1000 K from a graphite source yields a graphene LEED pattern incommensurate with that of the oxide, indicating graphene electronically decoupled from the oxide, as well as a sp2 C(KVV) Auger lineshape, and π→π* C(1s) XPS satellite. The data strongly suggest the ability to grow graphene on other structurally similar magnetic / magnetoelecric oxides, such as Cr2O3(111) / Si for spintronic applications.

The invention discloses a high-efficiency perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a light transmission / transparent electrode layer, a transition layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The transition layer is an oxide of nickel. The electron transport layer is a quaternary oxide. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by fullerene derivative. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The high-efficiency perovskite solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 20 percent, and is suitable for batch production.

The present invention provides a method for preparing a novel low-resistance p-type SrTiO3 capable of opening the way for oxide electronics in combination with an already developed low-resistance n-type SrTiO3. The method is characterized in that an acceptor and a donor are co-doped into a perovskite-type transition-metal oxide SrTiO3 during crystal growth.

The invention provides a top-emitting quantum dot electroluminescent diode, which comprises a reflection anode and a transparent cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the reflection anode and the transparent cathode, and a composite electron transmission lamination layer arranged between the quantum dot light-emitting layer and the transparent cathode, wherein the composite electron transmission lamination layer comprises a first electron transmission layer arranged between the quantum dot light-emitting layer and the transparent cathode, and a second electron transmission layer arranged between the transparent cathode and the first electron transmission layer, the material of the first electron transmission layer at least contains one inorganic oxide electron transmission material, and the material of the second electron transmission layer at least contains one organic electron transmission material.

The present invention provides a method for preparing a novel low-resistance p-type SrTiO3 capable of opening the way for oxide electronics in combination with an already developed low-resistance n-type SrTiO3. The method is characterized in that an acceptor and a donor are co-doped into a perovskite-type transition-metal oxide SrTiO3 during crystal growth.

The invention discloses a PIN heterojunction solar cell and a preparation method thereof. The perovskite solar cell comprises a light-transmitting / transparent electrode layer, a transition layer, an electron transfer layer, a light absorbing layer, an electron absorbing layer, a hole transfer layer and a top electrode which are sequentially stacked, wherein the transition layer is made from oxide of nickel; the electron transfer layer is made from quaternary oxide; the light absorbing layer is made from a material with a perovskite structure; the electron absorbing layer is formed by graphene and oxidized graphene; and the hole transfer layer is formed by ternary oxide, and the top electrode is formed by a material with good conductivity. According to the invention, the performance of the perovskite material is effectively utilized, the photoelectric conversion efficiency of the perovskite solar cell is improved by more than 18%, and the solar cell is suitable for batch production.

The invention discloses a graphene-containing solar cell and a preparation method thereof. The solar cell comprises: a light transmissive layer, a transparent electrode layer, a transition layer, an electron transmission layer, a light absorption layer, an electron absorption layer, a hole transmission layer and a top electrode which are successively laminated. The transition layer is made of oxides of nickel; the electron transmission layer is made of quaternary oxides; the light absorption layer is made of a material with a perovskite structure; the electron absorption layer is constituted of graphene and graphene oxides; the hole transmission layer is constituted of ternary oxides; the top electrode is constituted of a material with excellent conductivity. The photoelectric conversion efficiency of the solar cell is increased to 20% and above and the solar cell is suitable for mass production.

Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

The invention discloses a perovskite solar cell based on a Spiro‑OMeTAD / PbS composite hole transport layer and a preparation method thereof. The perovskite solar cell consists of a transparent conductive substrate, an oxide electron transport layer, a perovskite light absorbing layer, a Spiro‑OMeTAD / PbS composite hole transport layer, and a metal electrode. The perovskite thin-film solar cell adopts an evaporation method with a simple process and can be used for large-scale production to prepare a lead sulfide thin film, which is inserted between Spiro-OMeTAD and the metal electrode layer as a buffer layer. This perovskite solar cell based on the Spiro‑OMeTAD / PbS composite hole transport layer achieved a high photoelectric conversion efficiency of 15.11%. As a buffer layer between the hole transport layer and the metal electrode, lead sulfide has higher hole mobility, better humidity stability and photothermal stability, which can reduce the recombination of electron-hole pairs and improve battery stability. sex. Compared with other buffer layer materials, lead sulfide can improve device performance while protecting the device, and has a positive role in promoting the industrialization of solar cells.

The invention relates to a graphene aerogel-based laminated perovskite solar cell and preparation thereof. Particularly, the preparation comprises steps: (1) after a graphene oxide aqueous solution is taken for reduction, through vacuum freeze drying, the graphene aerogel is made; (2) ethanol is added, a paste slurry is obtained through grinding, the paste slurry is applied to the surface of a conductive substrate with an oxide electron transport layer and an insulating layer, and heating processing is carried out; (3) dispensing of a mixed perovskite precursor solution containing lead, iodine and / or bromine is carried out, and annealing and cooling to a room temperature are carried out; and (4) continuous dispensing of another mixed perovskite precursor solution containing tin, iodine and / or bromine is carried out, annealing and cooling are carried out, and preparation is completed. In comparison with the prior art, the cell structure is simpler, two kinds of perovskite absorb different intensities of sunlight, utilization of solar energy is increased; and in addition, due to the use of the graphene aerogel, the cell cost can be reduced, the hole mobility is improved, the cell efficiency is further enhanced, and the application prospect is wide.

The invention provides a hydrogen-containing ruthenium oxide, an electronic device and a method for regulating and controlling the physical property of the ruthenium oxide. The hydrogen-containing ruthenium oxide is prepared by adopting the method for regulating and controlling the physical properties of the ruthenium oxide. The structural formula of the ruthenium hydroxide is shown in the specification, a is one or more of an alkali metal element, an alkaline earth metal element and a rare earth metal element, wherein B is a Ru or a metal dopant of Ru, the metal dopant of Ru can be one or more of Ru and Ti, Mn, Cr, Fe, Ni, Mo, W, Ir, V, Co, Rh, Al, Sc, Zn or Cu, pm+qn+y=2x, m>=0, n>0, x>0, y>0, 1<=p<=3 and 2<q<=8. According to the hydrogen-containing ruthenium oxide, the property of the ruthenium oxide is greatly changed, and the application prospect of the ruthenium oxide is broadened.

The invention discloses a perovskite solar cell with a high-quality metal oxide electron transport layer and a preparation method thereof, comprising a glass substrate, a transparent conductive oxide electrode and a metal oxide electron transport layer, a perovskite light absorbing layer, a hole transport layer, and a metal electrode. The transparent conductive oxide electrode is a transparent conductive oxide electrode that has been treated with fluorine-based plasma to achieve fluorine doping. The metal oxide electron The transport layer is a fluorine-doped metal oxide electron transport layer that has been treated with fluorine-based plasma, wherein the fluorine-based plasma is generated by bombarding a fluorine-containing element gas with plasma. The invention has the advantages of simple process, good uniformity, good repeatability and high efficiency of the perovskite solar cell.

The invention discloses a perovskite / crystalline silicon laminated solar cell based on a double tunneling compound. The perovskite / crystalline silicon laminated solar cell comprises a grid line, an antireflection layer, a first transparent conductive oxide, n-type microcrystalline silicon or amorphous silicon (p-type microcrystalline silicon or amorphous silicon), a first tunneling compound, a N or P-type monocrystalline silicon wafer, a second tunneling compound, p-type microcrystalline silicon or amorphous silicon (n-type microcrystalline silicon or amorphous silicon), a second transparent conductive oxide, an electron transport layer (hole transport layer), a perovskite light absorption layer, a hole transport layer (electron transport layer), a third transparent conductive oxide, an antireflection layer and a grid line. According to the invention, tunneling compound selective contact is directly formed on the two faces of a N-type or P-type monocrystalline silicon wafer, so that the passivation effect is remarkable, the process is simple, and the cost is low; and the crystalline silicon bottom cell based on the double tunneling compound and the perovskite top cell can easily realize better current matching, interface charge transmission is smoother, and high conversion efficiency and high stability are realized at the same time.

The present invention relates to the field of materials. It adopts a doping method for substituting a part of Ti in SrTiO2 by In so as to provide a kind of indium-doped P-type strontium titanate (Sr InxTi1-xO3) block material, film and its preparation method, in which Sr:Ti:In=1:(1-x):x, x valus is 0.5%-50%, when the x value is smaller, the film possesses the dielectric and pyroelectric characteristics, and when the x valve is increased, its conductivity is raised, the said film is changed into a film material with matal oxide conductivity. The invented SrInxTi1-XO3 not only possesses extensive application in the field of detertor and conductive electrode, but also possesses important applicatino in the field of oxide electronics.

The invention discloses a novel ternary composite cathode material for a medium and low temperature solid oxide fuel cell, which comprises an oxygen ion conductor oxide, an electronic-oxygen ion mixed conductor oxide and an oxygen catalytic reduction active matter. The material is characterized in that: the cathode material taking perovskite structured oxygen ion and electronic mixed conductor asthe main body has the main function of catalytically reducing the gaseous oxygen at the surface as oxygen ions and transmitting the oxygen ions in an manner of bulk phase to the interface between an electrolyte and the cathode; the conductivity of the oxygen ions is improved by adding the oxygen ion conductor, thereby improving the bulk phase transmission speed of the oxygen ions; the speed of the surface oxygen exchange of the cathode material is obviously increased by adding the oxygen catalytic reduction active matter, thereby greatly enhancing the catalytic activity of the surface oxygen of the cathode material. All effective components of the ternary composite cathode material are synthesized by adopting nitrate by an EDTA-citric acid complex method. Shown in single cell tests, the ternary composite cathode material shows not only excellent comprehensive performance but also excellent compatibility among all the effective components.

The invention relates to a nanostructure-modified electron transport layer, which is prepared by the following steps: mixing a certain proportion of easily-dissolved monodisperse polystyrene nanosphere latex solution in an oxide electron transport layer nanoparticle stock solution, and preparing an electron transport layer containing a monodisperse polystyrene nanosphere preset structure by adopting a co-spin coating process, and finally, performing immersing in a toluene solution to remove a monodisperse polystyrene nanosphere preset structure to obtain an electron transport layer modified bythe semispherical nanostructure. According to the structure, the nanostructure is directly prepared in the electron transport layer, so that the average transmittance and scattering suede of the electron transport layer can be improved, a better photon utilization rate is obtained, the extraction time of carriers at the interface of the absorption layer and the electron transport layer is shortened, and dual effects of photon scattering and photon-generated carrier collection promotion can be achieved; and the photoelectric property of the device is effectively improved.

A fingerprint identification device comprises a substrate, wherein a first electrode and a second electrode are arranged on the substrate, an active layer is arranged between the first electrode and the second electrode, a top gate is arranged on the active layer, the second electrode is further connected with an oxide electronic layer, an oxide hole layer is arranged on the oxide electronic layer, and a transparent oxide layer is arranged on the oxide hole layer. Different from the prior art, the technical scheme designs the photoelectric detection element through designing the transparent oxide layer, and has higher electron mobility, thereby achieving a more sensitive recognition effect and lower power consumption.

The invention belongs to the technical field of display equipment, and particularly relates to a preparation method of a light-emitting device, which comprises the following steps: acquiring a substrate deposited with a cathode; preparing an electron transport layer on the surface, away from the substrate, of the cathode, wherein the electron transport layer comprises a metal oxide transport material; and after carrying out first ultraviolet irradiation treatment on the electron transport layer, sequentially preparing a quantum dot light-emitting layer and an anode on the side surface, deviating from the cathode, of the electron transport layer to obtain the light-emitting device. According to the preparation method of the light-emitting device, after the metal oxide electron transport layer is prepared on the surface of the cathode, fusion of the metal oxide electron transport material and the electrode is promoted through ultraviolet irradiation treatment, the potential barrier is reduced, and the electron injection efficiency is improved. Meanwhile, internal bonding and crystal re-growth in the electron transport layer are promoted, so that the surface of the electron transport layer is smoother, the interface roughness is reduced, the interface gap is optimized, and the influence of charge accumulation on the service life of the device is avoided.

The invention discloses a perovskite solar cell with a high-quality electron transport layer and a preparation method thereof. Light absorption layer, hole transport layer, metal electrode, the metal oxide electron transport layer is a metal oxide electron transport layer treated with oxygen free radicals, oxygen free radicals are produced by bombarding oxygen-containing gas with plasma . The invention has the advantages of simple process, good uniformity, good repeatability and high efficiency of the perovskite solar cell.

The present invention belongs to the field of material. It adopts a doping method for substituting a part of Ti in BaTiO2 by In so as to provide a kind of indium-doped P-type barium titanate (BaInxTi1-xO3) block material and film, in which Ba:Ti:In=1:(1-x):x, x value is 0.005-0.5, when x value is smaller, the film possesses stronger dielectric, ferroelectric and pyroelectric characteristics, and when x valve is increased, the said film possesses stronger conductivity. The difference of doping concentration can make the material possess different optical non-linear characteristics. The invented BaInxTi1-xO3 possesses extensive application, and its p-type property possesses important application in the field of oxide electronics.

An electronic device that includes a base member made of a material containing metal atoms, the base member having a bonding surface, and the bonding surface contains oxides of the metal atoms; an electronic element is mounted on the base member; an organic structure on the bonding surface of the base member; and a cover member bonded to the bonding surface of the base member via the organic structure so as to encapsulate the electronic element in a space between the base member and the cover member.