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256results about How to "Bonding strength" patented technology

Semiconductor device

A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.
Owner:SONY CORP

Connecting terminal, semiconductor package using connecting terminal and method for manufacturing semiconductor package

The connection reliability of connecting terminals with displacement gold plating films is improved by connecting terminals comprising a conductive layer, an electroless nickel plating film, a first palladium plating film which is a displacement or electroless palladium plating film with a purity of 99% by mass or greater, a second palladium plating film which is an electroless palladium plating film with a purity of at least 90% by mass and less than 99% by mass, and a displacement gold plating film, wherein the electroless nickel plating film, the first palladium plating film, the second palladium plating film and the displacement gold plating film are laminated in that order on one side of the conductive layer, and the displacement gold plating film is situated on the uppermost surface layer on the opposite side from the conductive layer.
Owner:HITACHI CHEM CO LTD

Semiconductor device having penetrating electrodes each penetrating through substrate

Disclosed herein is a device that includes: a first semiconductor chip having a first internal circuit formed in a first substrate; and a plurality of penetrating electrodes each penetrating through the first semiconductor substrate. The plurality of penetrating electrodes includes first, second, third and fourth penetrating electrodes arranged along a first line. The first and second penetrating electrodes are in a floating state without electrically connected to the first internal circuit. The third penetrating electrode is electrically connected to a first power supply line that conveys a first power supply potential to the first internal circuit. The fourth penetrating electrode is electrically connected to a second power supply line that conveys a second power supply potential to the first internal circuit. The third and fourth penetrating electrodes are arranged between the first penetrating electrode and the second penetrating electrode.
Owner:LONGITUDE LICENSING LTD

Virtual image display device

A virtual image display device has a light guide device in which the half mirror layer (the semi-transmissive reflecting film) of the light guide member is formed on the partial area of the first junction surface, and the second junction surface of the light transmitting member is bonded to the first junction surface in at least the exceptional area. Therefore, it is possible to increase the bonding strength of the first junction surface and the second junction surface, namely the strength of the light guide device composed of the light guide member and the light transmitting member combined with each other even in the case in which the attachment force of the half mirror layer (the semi-transmissive reflecting film) with respect to the first junction surface is not sufficiently strong.
Owner:SEIKO EPSON CORP

Semiconductor substrate, semiconductor device and manufacturing method thereof

It is an object to provide a method for manufacturing a semiconductor substrate in which contamination of a semiconductor layer due to an impurity is prevented and the bonding strength between a support substrate and the semiconductor layer can be increased. An oxide film containing first halogen is formed on a surface of a semiconductor substrate, and the semiconductor substrate is irradiated with ions of second halogen, whereby a separation layer is formed and the second halogen is contained in a semiconductor substrate. Then, heat treatment is performed in a state in which the semiconductor substrate and the support substrate are superposed with an insulating surface containing hydrogen interposed therebetween, whereby part of the semiconductor substrate is separated along the separation layer, so that a semiconductor layer containing the second halogen is provided over the support substrate.
Owner:SEMICON ENERGY LAB CO LTD

Mounting plate for solid-state imaging device and method for bonding solid-state imaging device to mounting plate

A mounting plate has an opening provided for bonding a solid-state imaging device thereto. The opening of the mounting plate comprises a first edge portion and a second edge portion. The first edge portion corresponds to a first side of part of the contour of a light receiving area of the solid-state imaging device. The second edge portion corresponds to a second side of part of the contour. The first and second edge portions function as reference lines for positioning the solid-state imaging device over said opening.
Owner:PENTAX RICOH IMAGING CO LTD

Process for forming catalyst layer, and process for producing membrane/electrode assembly for polymer electrolyte fuel cell

To provide a process for forming a catalyst layer whereby defects such as cracks are scarcely formed in the catalyst layer, and the bond strength is high at the interface between the catalyst layer and a reinforcing layer and at the interface between the catalyst layer and a polymer electrolyte membrane; and a process for producing a membrane / electrode assembly for a polymer electrolyte fuel cell, which is capable of exhibiting high power generation performance even under a low humidity condition and has sufficient mechanical strength and dimensional stability and which has excellent durability even in an environment where humidification and drying, etc. are repeated.In the production of a membrane / electrode assembly 10, a first catalyst layer 22 (a second catalyst layer 34) is formed by a process comprising steps (a) and (b). (a) A step of applying a coating fluid comprising a catalyst and an ion-exchange resin, on a substrate to form a coating fluid layer. (b) A step of disposing a reinforcing layer 24 (34) on the coating fluid layer formed in the step (a) and then, drying the coating fluid layer to form a first catalyst layer 22 (a second catalyst layer 34).
Owner:ASAHI GLASS CO LTD

Production method of multilayer ceramic electronic device

By a production method for producing a multilayer ceramic electronic device including dielectric layers and internal electrode layers comprising the steps of forming a green sheet to be said dielectric layer after firing, forming a pre-fired electrode layer to be said internal electrode layer after firing in a predetermined pattern on said green sheet by using a conductive material paste, forming a green chip by successively stacking said green sheets and said pre-fired electrode layers, and firing said green chip: wherein the conductive material paste for forming said pre-fired electrode layer is composed at least of conductive material particles, a first common material composed of ceramic powder and a second common material composed of ceramic powder having a larger average particle diameter than that of said first common material; an average particle diameter of said first common material is 1/20 to ½ of an average particle diameter of said conductive material particles; and the average particle diameter of said second common material is 1/10 to ½ of an average thickness of said internal electrode layers after firing; a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein arising of cracks is effectively prevented, having a low short-circuit defect rate, a low voltage resistance defect rate and high capacitance is produced.
Owner:TDK CORPARATION
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