36results about How to "Poor bonding" patented technology

A display panel includes: a first substrate; light-emitting elements on a region of the first substrate; a second substrate facing the first substrate with the light-emitting elements therebetween; a glass frit between the first substrate and the second substrate so as to surround the region of the first substrate in which the light-emitting elements are disposed, the glass frit providing a hermetic seal between the first substrate and the second substrate; and a light-shielding part formed on one of the first substrate and the second substrate so as to extend along the glass frit, the light-shielding part shielding light. The light-shielding part has a lower light-shielding property in a region corresponding to the outer region of the glass frit than in a region corresponding to the inner region of the glass frit. The glass frit has been irradiated with light through the light-shielding part.

A process for producing a capacitive electromechanical conversion device by bonding together a substrate and a membrane member to form a cavity sealed between the substrate and the membrane member, the process for producing a capacitive electromechanical conversion device comprises the steps of: providing a gas release path penetrating from a bonded interface between the substrate and the membrane member to the outside, and forming the cavity by bonding the membrane member with the substrate with the gas release path provided; the gas release path being provided at a location where the path does not communicate with the cavity.

A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.

A display panel includes: a first substrate; light-emitting elements on a region of the first substrate; a second substrate facing the first substrate with the light-emitting elements therebetween; a glass frit between the first substrate and the second substrate so as to surround the region of the first substrate in which the light-emitting elements are disposed, the glass frit providing a hermetic seal between the first substrate and the second substrate; and a light-shielding part formed on one of the first substrate and the second substrate so as to extend along the glass frit, the light-shielding part shielding light. The light-shielding part has a lower light-shielding property in a region corresponding to the outer region of the glass frit than in a region corresponding to the inner region of the glass frit. The glass frit has been irradiated with light through the light-shielding part.

The invention concerns a heating or cooling mat (1) with a carrying sheet (2) having a top side (9) and a bottom side (11), and at least one heating and cooling unit (5) located on the carrying sheet (2), an adhesive being located on the bottom side (11) of the carrying sheet (2). It is endeavored to improve the handling properties of the heating or cooling mat. For this purpose, the adhesive is located on a double-sided adhesive tape (12), which is fixed on the bottom side (11) of the carrying sheet (2), the adhesive on the bottom side of the adhesive tape (12) being covered by the top side of the carrying sheet (2) and the adhesive tape (12) bonding with the top side of the carrying sheet (2) in the rolled up state of the heating or cooling mat (1).

A thin film transistor (TFT) array panel structure and a fabrication method thereof are provided. The method includes the following steps. An insulating substrate is provided, on which a first metal layer is deposited to form a plurality of gate electrodes, a plurality of lower electrodes of storage capacitors, a plurality of scan lines, and a plurality of scan line pads with a first mask process. A TFT island region is formed with a second mask process. Drain electrodes and source electrodes of the TFT, upper electrodes of storage capacitors, pixel electrodes, data lines and data line pads are formed, and a plurality of pixel display regions is defined with a third mask process. The pattern of a passivation layer is defined with a fourth mask. A second metal layer in the pixel display region is removed by selective etching.

The present invention discloses a method for producing coated film, comprising the following procedures of: coating water-based macromolecular emulsion on the surface of a film substrate, drying the film substrate coated with emulsion with microwave, and then curing the dried film to make the coating crystallize homogeneously. The coated films produced with that method are tolerant to friction and are featured with strong resistance to scraping, high tensility, high contractility, excellent antistatic property, low surface friction factor, perfect glossiness, high oxygen and water obstruction property, and low production cost, and are especially suitable for producing high-performance thermal contracting coated films. The contracting films produced with the method may be used as esthetic and abrasion-resistant wrapping material and may help to extend quality guarantee period of articles.

An organopolysiloxane composition for bonding to magnesium alloys comprises (A) 100 parts by weight of an organopolysiloxane of the following general formula (1) and / or (2)wherein R may be the same or different and represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and n is an integer of at least 10, X represents an oxygen atom or an alkylene group having 2 to 5 carbon atoms, and m independently represents an integer of 0 or 1, (B) 0.1 to 50 parts by weight of an organosilicon compound having at least three hydrolyzable groups bonded to silicon atoms in one molecule and / or a partial hydrolyzate thereof, and (C) 0.1 to 15 parts by weight of an acidic silane coupling agent.

An optical fiber manufacturing apparatus for manufacturing an optical fiber by drawing a optical fiber preform, including: a drawing furnace having therein a muffle tube into which the optical fiber preform is inserted and heating the optical fiber preform; and a first seal member which is disposed at an insert side of the drawing furnace so as to be coaxial with the drawing furnace and which seals the optical fiber preform inserted into an opening formed at the center thereof, wherein the first seal member includes a plurality of inner-circumference slits formed in the inner circumference thereof and a plurality of outer-circumference slits formed in the outer circumference thereof.

A range of carbon materials can be produced using lignin in combination with synthetic phenolic resins or naturally occurring lingo-cellulosic materials. The lignin, which is essentially a naturally occurring phenolic resin, has a carbon yield on pyrolysis similar to that of the synthetic resins, which aids processing. The lignin can be used as a binder phase for synthetic resin or lignocellulosic materials allowing the production of monolithic carbons from a wide range of precursors, as the primary structural material where the thermal processing is modified by the addition of small quantities of synthetic resin materials or as structure modified in the production of meso / macro porous carbons in either bead, granular or monolithic form. A carbonised monolith is provided comprising mesoporous and / or macroporous carbon particles dispersed in a matrix of microporous carbon particles with voids between the particles defining paths for fluid to flow into and through the structure. The monolith may take the form of a shaped body having walls defining a multiplicity of internal transport channels for fluid flow, the transport channels being directed along the extrusion direction. The monolith may be made by carbonising a shaped phenolic body based on phenolic resin precursors. In a method for producing such a carbonisable shaped resin body solid particles of a first phenolic resin are provided which is partially cured so that the particles are sinterable but do not melt on carbonisation. The particles of the first phenolic resin are mixed with particles of a second phenolic resin that has a greater degree of cure than said first phenolic resin and has a mesoporous and / or macroporous microstructure that is preserved on carbonisation. The resulting mixture is formed into a dough e.g. by mixing the resin particles with methyl cellulose, PEO and water, after which the dough is extruded to form a shaped product and stabilising in its shape by sintering.

The present application provides a gas-generating aqueous fluid containing a gas-generating compound like an azo compound, and an organic amine like a primary, secondary or tertiary amine, a hydrazine, a hydrazide, or a semicarbazide. The aqueous fluid may also a viscosifier, and a foaming surfactant. The present application also provides a method of using the gas-generating composition to modulate density of a wellbore fluid for use in downhole applications. The method optionally includes adding an oxidizer to the wellbore fluid.

The invention discloses a method for preparing a diamond film on the surface of stainless steel with Cr / CrAlN as a transition layer, which is characterized in that it comprises the following steps: S1: pretreatment of stainless steel samples: sanding the stainless steel samples with acetone and absolute ethanol Ultrasonic treatment, drying and standby; S2: Deposit Cr / CrAlN transition layer on the surface of stainless steel: put the stainless steel sample in the S1 step into the sample stage of the magnetron sputtering equipment, install the Cr and Al targets on the target holder, and place the Cr / CrAlN transition layer on the stainless steel Deposit a Cr film and a CrAlN film on the surface of the substrate to obtain a stainless steel sample containing a Cr / CrAlN transition layer; S3: Prepare a diamond film on the stainless steel surface: perform ultrasonic seeding on the stainless steel sample containing a Cr / CrAlN transition layer in step S2, and use a hot wire HFCVD is used to deposit diamond films to realize the preparation of diamond films on the surface of stainless steel containing Cr / CrAlN as a transition layer. Adopting the technology of the invention, the binding force between the diamond film and the stainless steel is high, and the film does not fall off under the action of a load of 150 kg on a Rockwell hardness tester.

The invention provides an array substrate and chip bonding method, the array substrate comprising: an active area, and a bonding area located around the active area, wherein the bonding area is provided with an input terminal group, a first output terminal group and a second output terminal a group; the first output terminal group is located at a side of the input terminal group away from the active area, and the second output terminal group is located between the first output terminal group and the input terminal group; when bonding chips, the first output terminal group or the second output terminal group is selected to cooperate with the input terminal group for chip bonding according to the chip type. By simultaneously providing the first and second output terminal groups, the bonding of the second type chip increases the distance between the chip and the edge of the array substrate.