33results about "Organic semiconductors manufacture/treatment" patented technology

The lighting device includes a first resin layer having a first refractive index and a second resin layer having a second refractive index lower than the first refractive index and higher than the refractive index of the air, which are over a light-emitting element layer, a plurality of granules provided at the interface between the first resin layer and the second resin layer and each having the second refractive index or a plurality of projections each having an apex provided inside the first resin layer and a flat surface in contact with the interface between the first resin layer and the second resin layer and having the second refractive index, an uneven structure provided at the interface with the air, and a resin substrate having the second refractive index.

An organic light-emitting display panel includes a pixel unit including a plurality of pixels respectively located at intersections between scan lines and data lines and displaying different colors; a plurality of pads respectively coupled to ends of the data lines; and a test unit selectively performing an array test to detect a defect of a pixel circuit of the pixels or a cell test to detect a defect of a light-emitting device of the pixels.

Monolithic tandem chalcopyrite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a substrate; a bottom solar cell on the substrate, the bottom solar cell having a first absorber layer that includes a chalcopyrite material; and a top solar cell monolithically integrated with the bottom solar cell, the top solar cell having a second absorber layer that includes a perovskite material. A monolithic tandem photovoltaic device and method of formation thereof are also provided.

Provided is a method for manufacturing a solar cell including: a) forming an electron transport layer on a first electrode; b) forming a light absorber by applying a light absorber solution as a solution for forming a light absorber containing an organic-metal halide having a perovskite structure, the light absorber solution containing an organic halide and a metal halide dissolved therein so as to have a non-stoichiometric ratio based on the organic-metal halide; c) forming a hole conduction layer by applying and drying a hole transport solution in which an organic hole transport material is dissolved; and d) forming a second electrode, which is a counter electrode of the first electrode, on the hole conduction layer.

An organic light-emitting display panel includes a pixel unit including a plurality of pixels respectively located at intersections between scan lines and data lines and displaying different colors; a plurality of pads respectively coupled to ends of the data lines; and a test unit selectively performing an array test to detect a defect of a pixel circuit of the pixels or a cell test to detect a defect of a light-emitting device of the pixels.

Provided are a compound of Formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode and comprising the compound, the element showing improved luminescent efficiency, stability, and life span.

The invention provides a perovskite solar cell and a preparation method thereof and relates to a solar cell. The perovskite solar cell is of a laminated structure and is sequentially provided with a substrate, a transparent electrode, a compact electron transfer layer, a mesopore layer, a perovskite light absorption layer, a hole transporting layer and a counter electrode from bottom to top. The preparation method comprises the steps of performing evaporation or sputtering of the transparent electrode on the substrate; coating the transparent electrode with dispersion liquid, and after sintering, preparing the electron transfer layer; coating the electron transfer layer with dispersion liquid, and after sintering, preparing the mesopore layer; coating the mesopore layer with a one-step method perovskite alkaline solution, and after annealing, preparing a perovskite crystal film; preparing the counter electrode on the perovskite crystal film, and obtaining the perovskite solar cell. Prepared perovskite film crystal is high in thickness and compact, holes and needle holes and the like are eliminated completely, the high quality film-forming reproducibility of perovskite is very good, and the stability and photoelectric conversion efficiency of the perovskite solar cell are greatly improved.

The invention discloses a solar cell containing perovskite material and a preparation method thereof. The perovskite solar cell comprises a light transmission layer, a transparent electrode layer, a transition layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The transition layer is an oxide of nickel. The electron transport layer is a quaternary oxide. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by fullerene derivative. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 20 percent, and is suitable for batch production.

Copper(I) complexes for the emission of light with a structure according to formula A:wherein:M is Cu(I);L-B-L: a neutral, bidentate ligand,Z4-Z7: includes N or the fragment CR, with R=organic group, selected from the group consisting of: hydrogen, halogen or deuterium or groups which are bound via oxygen (—OR′″), nitrogen (—NR′″2), or phosphorous atoms (PR′″2) as well as alkyl, aryl, heteroaryl, alkenyl, alkinyl, trialkylsilyl and triarylsilyl groups or substituted alkyl, aryl, heteroaryl and alkenyl groups with substituents such as halogens or deuterium or lower alkyl groups;X is either CR′″2 or NR′″;Y is either O, S or NR′″;Z8 includes the fragment CR′, with R′=O*R′″, N*R′″2 or P*R′″2, wherein the bond to the Cu atom is carried out via these groups;R″ is a sterically demanding substituent, which inhibits a change in geometry in direction to planarization of the complex in excited state,R′″=organic group which is selected from the group consisting of: hydrogen, halogen or deuterium, as well as alkyl, aryl, heteroaryl, alkenyl, alkinyl groups or substituted alkyl, aryl, heteroaryl and alkenyl groups with substituents such as halogens or deuterium, alkyl groups, and further generally known donor and acceptor groups* indicates the atom which receives the complex bond; and# indicates the atom which mediates the bond with the second chemical unit.

The invention relates to an organic semiconductor material composition and a semiconductor layer of an organic field effect transistor and a preparation method for the semiconductor layer. The organic semiconductor material composition comprises a naphthalimide derivative, a polymer additive and an organic solvent. The organic semiconductor material composition disclosed in the invention can prepare the semiconductor layer of the organic field effect transistor by adopting film dropping or ink jetting and printing methods, so that preparation of the organic field effect transistor by adopting an all-soliton method or even an all-printing method can be realized, and production efficiency and production scale can be improved and enlarged; and in addition, the composition is high in stability in the air, the prepared semiconductor layer is high in crystallization property, the performance of the transistor can be improved, and operation of the organic field effect transistor at a low voltage (less than or equal to 5V) can be realized. Particularly, the semiconductor composition disclosed in the invention adopts the non-chlorine solvent which has relatively low pollution to environment and human body, so that the chlorine-containing solvent which cannot be degraded by microbe in environment easily and is commonly used in the existing organic semiconductor field can be replaced.

The invention discloses a perovskite solar cell with the excellent performance and a preparing method thereof. The perovskite solar cell comprises a light-transmitting / transparent electrode layer, an electron transporting layer, a light absorption layer, an electron absorption layer and a top electrode, wherein the light-transmitting / transparent electrode layer, the electron transporting layer, the light absorption layer, the electron absorption layer and the top electrode are sequentially stacked, and the light absorption layer is made from a material which is of a perovskite structure; the electron absorption layer is formed by a fullerene derivative; the top electrode is formed by a material with the good electrical conductivity. According to the perovskite solar cell with the excellent performance and a preparing method thereof, the performance of the perovskite material is effectively used, the photoelectric converting efficiency of the perovskite solar cell is improved to be 17% or above, and the perovskite solar cell is suitable for mass production.

The invention provides a display substrate, a manufacturing method thereof and a flexible display device. The display substrate in the present invention includes a base substrate and a vulnerable member arranged on the base substrate, as well as a stress absorption layer arranged between the base substrate and the vulnerable member, wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate; the stress absorption layer is not arranged on part of the base substrate. Since the display substrate and the flexible display device provided by the present invention are provided with the stress absorption layer, stress generated during bending may be dispersed through the stress absorption layer to protect the vulnerable member from being damaged, so as to improve the reliability of the display substrate and the flexible display device.

Copper(I) complexes for the emission of light with a structure according to formula A:wherein:M is Cu(I);L-B-L: a neutral, bidentate ligand,Z4-Z7: includes N or the fragment CR, with R=organic group, selected from the group consisting of: hydrogen, halogen or deuterium or groups which are bound via oxygen (—OR′″), nitrogen (—NR′″2), or phosphorous atoms (PR′″2) as well as alkyl, aryl, heteroaryl, alkenyl, alkinyl, trialkylsilyl and triarylsilyl groups or substituted alkyl, aryl, heteroaryl and alkenyl groups with substituents such as halogens or deuterium or lower alkyl groups;X is either CR′″2 or NR′″;Y is either O, S or NR′″;Z8 includes the fragment CR′, with R′═O*R′″, N*R′″2 or P*R′″2, wherein the bond to the Cu atom is carried out via these groups;R″ is a sterically demanding substituent, which inhibits a change in geometry in direction to planarization of the complex in excited state,R′″=organic group which is selected from the group consisting of: hydrogen, halogen or deuterium, as well as alkyl, aryl, heteroaryl, alkenyl, alkinyl groups or substituted alkyl, aryl, heteroaryl and alkenyl groups with substituents such as halogens or deuterium, alkyl groups, and further generally known donor and acceptor groups* indicates the atom which receives the complex bond; and# indicates the atom which mediates the bond with the second chemical unit.

The invention discloses a broad spectrum solar cell material and a preparation method thereof. The broad spectrum solar cell material is composed of the components in weight parts: 10-20 parts of graphite, 2-5 parts of silicon carbide, 3-8 parts of silicon nitride, 0.8-1.5 parts of erbium oxide, 2-8 parts of quantum dots, 20-30 parts of cyclopentene thiophene, 10-15 parts of diazosulfide, 2-5 parts of 1,8-octane dithiol, 0.15-0.55 part of lead hydroxide oxide sulfate, 1.5-8.5 parts of radical scavenger, 1-5 parts of thermal stabilizer, 3-10 ultraviolet light absorber and 1-3 parts of carbon black. The broad spectrum solar cell material has good electron stacking performance, higher carrier mobility and absorption peaks within the scope of 150-4000 nm, is capable of effectively improving the photoelectric conversion efficiency of solar cells and has broad application prospects.

The invention relates to a planar perovskite photovoltaic cell with a metal phthalocyanine compound as an electron transfer layer and belongs to the field of optoelectronic materials and devices. The cell is composed of a transparent conducting substrate, a hole transfer layer, a perovskite light absorption layer, the electron transfer layer, an electrode modifying layer and a metal electrode. The cell has the advantages that the metal phthalocyanine compound growing through a primary vacuum deposition method serves as the electron transfer layer to replace a traditional electron transfer layer based on a fullerene derivative. The prepared metal phthalocyanine compound has stable chemical properties, has good heat resistance, sun proofing, acid resistance and alkali resistance, and the perovskite light absorption layer can be well protected. The metal phthalocyanine compound is applied to the perovskite photovoltaic cell, the cost of the cell is reduced, and the service life of the cell is prolonged. The perovskite photovoltaic cell with the metal phthalocyanine compound as the electron transfer layer is high in photoelectric conversion efficiency, simple in structure, low in cost and stable in performance.

The invention discloses a preparation method for a patterned organic thin film, belongs to the technical field of organic thin film patterning, and solves a technical problem of high possibility of thermal damage to a non-processing layer adjacent to a to-be-processed layer during laser etching of the to-be-processed layer in an organic thin film patterning method in the prior art. The preparation method comprises the following steps: firstly, preparing a patterned substrate thin film layer on an upper surface of a substrate; secondly, preparing a single layer or a compound organic thin film layer on the patterned substrate thin film layer and the exposed upper surface of the substrate; thirdly, scanning the single layer or the compound organic thin film layer point by point through an infrared laser source, enabling the patterned substrate thin film layer to absorb heat by utilizing difference of the absorption rate of an organic thin film material and a substrate thin film material to infrared rays, burning off the single layer or the compound organic thin film layer on the patterned substrate thin film layer, reserving the single layer or the compound organic thin film layer on the exposed upper surface of the substrate, and obtaining the patterned organic thin film. The preparation method does not have a requirement on the pulse width of a laser, and is easy to guarantee in processing quality and low in cost.

Provided is a method for manufacturing a solar cell including: a) forming an electron transport layer on a first electrode; b) forming a light absorber by applying a light absorber solution as a solution for forming a light absorber containing an organic-metal halide having a perovskite structure, the light absorber solution containing an organic halide and a metal halide dissolved therein so as to have a non-stoichiometric ratio based on the organic-metal halide; c) forming a hole conduction layer by applying and drying a hole transport solution in which an organic hole transport material is dissolved; and d) forming a second electrode, which is a counter electrode of the first electrode, on the hole conduction layer.

Problem: To provide a production method for a perovskite layer using a tin-based perovskite compound having excellent flatness and a production method for a perovskite-type solar cell using the perovskite layer obtained by the above-described production method for the perovskite layer. Solution: A method for producing a perovskite layer that includes a step of applying a solution containing an Sn-based perovskite compound to a substrate, a step of applying a poor solvent to the substrate, and a step of performing an annealing process to the substrate, in this order, wherein the poor solvent is at 45° C. to 100° C.

The lighting device includes a first resin layer having a first refractive index and a second resin layer having a second refractive index lower than the first refractive index and higher than the refractive index of the air, which are over a light-emitting element layer, a plurality of granules provided at the interface between the first resin layer and the second resin layer and each having the second refractive index or a plurality of projections each having an apex provided inside the first resin layer and a flat surface in contact with the interface between the first resin layer and the second resin layer and having the second refractive index, an uneven structure provided at the interface with the air, and a resin substrate having the second refractive index.

The present invention provides an OLED package method and an OLED package structure. By introducing the Ti-doped diamond-like carbon film layer into the OLED thin film package layers and utilizing the higher transmission rate, the better flexibility, the high heat conductivity and lower water and oxygen permeation rate of the Ti-doped diamond-like carbon film layer, it can promote the transmission rate, the bendable property, the high heat conductivity and the water and oxygen resistant property of the OLED thin film package layers, and thus to promote the usage performance and usage lifetime of the flexible OLED display panel.

The invention provides a display substrate, a manufacturing method thereof and a flexible display device. The display substrate in the present invention includes a base substrate and a vulnerable member arranged on the base substrate, as well as a stress absorption layer arranged between the base substrate and the vulnerable member, wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate; the stress absorption layer is not arranged on part of the base substrate. Since the display substrate and the flexible display device provided by the present invention are provided with the stress absorption layer, stress generated during bending may be dispersed through the stress absorption layer to protect the vulnerable member from being damaged, so as to improve the reliability of the display substrate and the flexible display device.

An organic electrical device can include a first dielectric substrate including a PVDF-TrFe-CFE terpolymer, a first semiconductor region coupled to a first surface of the first dielectric substrate, and a first gate region coupled to a second surface of the first dielectric substrate, the second surface opposite the first surface and opposite the first semiconductor region. The organic electrical device can include an organic field-effect transistor (OFET), comprising the first gate region, the first dielectric substrate, a first source region, and a first drain region respectively electrically coupled to the first semiconductor region. An electrostrictive actuator or mechanical sensor can be co-integrated on the first dielectric substrate, the actuator or sensor including first and second conductive regions located on opposite surfaces of the first dielectric substrate. The actuator or sensor can be electrically coupled to the OFET, and controlled at least in part by the OFET.

The invention provides an organic-inorganic hybrid solar cell, a preparation method thereof, and a hole transport layer forming method. Wherein, the method for forming the hole transport layer of the hybrid solar cell comprises: Step A: Carrying out texture processing to the front side of the silicon substrate to form a pyramid structure interface; Step B: treating the silicon substrate with the pyramid structure interface in hydrofluoric acid Carry out isotropic etching in the mixed solution of nitric acid, to smooth the bottom of the pyramid structure; The annealing treatment forms a p-type hole transport layer. After the present invention carries out low-cost chemical treatment on the bottom of the pyramid structure on the silicon substrate, the bottom becomes smooth and open, basically maintaining the anti-reflection effect of the pyramid, and can also ensure the conformal coverage of the conjugated organic polymer on the pyramid .

The invention relates to a display device. The display device includes a display device and a packaging cover packaged outside the display device, a packaging cavity is formed between the display device and the packaging cover, and a protective gas is filled in the packaging cavity; the protective gas is selected from carbon dioxide or hydrogen. The display device can inhibit the damage of the water vapor and oxygen in the external air to the display device, thereby improving the service life of the display device. The invention also discloses a packaging method for a display device, which includes placing analyte gas around the effective display area of ​​the display device; vacuum packaging the display device with a packaging cover around the analyte gas; making the analyte gas release a protective gas, The protective gas is selected from carbon dioxide or hydrogen.

Provided is a press forming method for a composite material. A press forming method for a composite material including an upper metal member, a resin member, and a lower metal member, and including: producing the lower metal member having first and second coating films respectively bonded to upper and lower surfaces thereof; producing the composite material including the upper metal member, a first hot melt member, the resin member, a second hot melt member, and the lower metal member; cutting an area spaced inward a predetermined distance from a lengthwise edge of the composite material by using a T-cutter, such that only the lower metal member remains; removing the upper metal member, the first hot melt member, the resin member, and the second hot melt member that are located outside the cut area; and folding the lower metal member by an angle of 180 degrees by using a hemming die.

Provided are a compound of Formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode and comprising the compound, the element showing improved luminescent efficiency, stability, and life span.

The invention discloses a photoelectric device manufacturing system with an online detection function. The photoelectric device manufacturing system comprises a conversion chamber (1), a first evaporation chamber (2), a second evaporation chamber (3), a glove box (4) and a detection chamber (5). The conversion chamber (1) is communicated with the first evaporation chamber (2), the second evaporation chamber (3), the glove box (4) and the detection chamber (5) through a vacuum isolation valve; a first rotary table (16) is arranged in the first evaporation chamber (2), and a plurality of organic material evaporation sources (17) are arranged on the periphery of the first rotary table (16); a second rotary table (18) is arranged in the second evaporation chamber (3), and a plurality of inorganic material evaporation sources (19) are arranged on the periphery of the second rotary table (18); the first rotary table (16) and the second rotary table (18) can rotate; a transmission device is arranged in the conversion chamber (1), and an online detection device is arranged in the detection chamber (5). According to the photoelectric device manufacturing system, online detection of performance of photoelectric devices can be achieved, and therefore the photoelectric devices can be prevented from being exposed to the atmospheric environment in the detection process.

Provided is a press forming method for a composite material. A press forming method for a composite material including an upper metal member, a resin member, and a lower metal member, and including: producing the lower metal member having first and second coating films respectively bonded to upper and lower surfaces thereof; producing the composite material including the upper metal member, a first hot melt member, the resin member, a second hot melt member, and the lower metal member; cutting an area spaced inward a predetermined distance from a lengthwise edge of the composite material by using a T-cutter, such that only the lower metal member remains; removing the upper metal member, the first hot melt member, the resin member, and the second hot melt member that are located outside the cut area; and folding the lower metal member by an angle of 180 degrees by using a hemming die.

The present invention provides an OLED packaging method and an OLED package structure. The OLED packaging method of the present invention is such that a silicon-doped diamond-like carbon layer and a diamond-like carbon scattering layer are both provided in an OLED package structure so that the silicon-doped diamond-like carbon layer may provide an effect of blocking external moisture and oxygen and the diamond-like carbon scattering layer is used to provide an effect of increasing light transmission rate, whereby it is possible to greatly extend the service life of the OLED device and also to ensure a relatively high light output efficiency of the OLED device. The OLED package structure of the present invention is such that a silicon-doped diamond-like carbon layer and a diamond-like carbon scattering layer are both provided, so that the silicon-doped diamond-like carbon layer may provide an effect of blocking external moisture and oxygen and the diamond-like carbon scattering layer is used to provide an effect of increasing light transmission rate, whereby it is possible to greatly extend the service life of the OLED device and also to ensure a relatively high light output efficiency of the OLED device.

A thermally excited delayed fluorescent host material based on phosphine heteroaryl derivatives and its preparation method and application, which relate to a thermally excited delayed fluorescent host material and its preparation method and application. It aims to solve the technical problem that the existing planar heat-excited delayed fluorescent dye molecules are prone to quenching, resulting in low device efficiency. The structural formula of the thermally excited delayed fluorescence host material of the present invention is: Preparation method: react the derivatives of o-dibromobenzene, phenylphosphine dichloride, and n-butyllithium in tetrahydrofuran, and then extract and dry, then directly purify or vulcanize / and purification after oxidation to obtain the product; or the derivatives of o-dibromobenzene, phenyl phosphine dichloride, and n-butyllithium react with diphenyl phosphine chloride in tetrahydrofuran and then react with diphenyl phosphine chloride. After reoxidation, carry out Purification affords the product. The fluorescent host material based on the phosphine heteroaryl derivative is used in thermal excitation delayed fluorescence electroluminescent devices.