The invention discloses a poduction technology and a device for
boron-removing and purification of polysilicon by adopting
electromagnetic induction melting assisted with high-temperature
plasma, andprovides a poduction technology and a polysilicon
boron-removing and purification device which have low cost and high efficiency, are applicable to industrial popularization and adopt electromagneticinduction melting assisted with high-temperature
plasma. The purification device is provided with a vacuum
system, a mid-frequency induction melting
system, a transferred arc
plasma melting
system anda pouring
graphite mould. The technology comprises the following steps: putting the
silicon metal into a
crucible, vacuumizing, and heating and melting the
silicon metal; increasing the power after melting to lead the
liquid silicon temperature to be kept between 1600 DEG C and 1800 DEG C, starting the plasma melting system, declining a plasma gun above an arc initiating device, and introducing working gas for arc initiating; moving the arc initiating device off after arc initiating is finished, adjusting specified current and plasma
arc length, after conducting plasma melting to the
liquid silicon surface, zeroing the specified current, disconnecting the plasma arc, rising the plasma gun, turning off the air supply, pouring the
liquid silicon into the mould, and taking
silicon ingots outafter standing and cooling.