The invention relates to a dual-layer floating gate flexible
organic memory device and a preparation method therefor. The dual-layer floating gate flexible
organic memory device mainly comprises a substrate, a
dielectric layer, a control gate, a
barrier layer, a first floating gate layer, an isolating layer, a second floating gate layer, a tunneling layer, an
organic semiconductor layer, a source
electrode and a drain
electrode, wherein the source
electrode and the drain electrode are positioned above the tunneling layer. A dual-layer gold nanocrystalline is taken as the floating gate
layers, so that the
memory window of the memory device can be improved, and the working
voltage range can be expanded; a
femtosecond laser reduction technology is adopted, so that a link of intermediate repeated electrode deposition is reduced, the production process is simplified, the
pollution doping in the production is lowered, and the product yield can be improved; the
barrier layer, the isolating layer and the tunneling layer adopted by the dual-layer floating gate flexible
organic memory device all adopt high-
dielectric-constant
graphene oxide, so that leakage current can be effectively lowered, the stability of the memory can be improved, and the working
voltage can be lowered; all the materials adopted by the memory device are flexible and can be bent, so that the memory device can be applied to
flexible circuits; and in addition, the
femtosecond laser reduction technology and a vacuum thermal
evaporation and
spin coating technology adopted in the preparation method of the invention are mature in technology and low in product, so that the large-scale production of the dual-layer floating gate flexible organic memory device can be realized.