The invention discloses a resistive random access memory based on an organic / inorganic hybrid perovskite material and a fabrication method of the resistive random access memory. The resistive random access memory comprises a bottom electrode, a top electrode and a resistance changing functional layer material, wherein the resistance changing functional layer material is arranged between the bottom electrode and the top electrode and comprises one layer or multiple layers of organic / inorganic hybrid perovskite thin film materials. The fabrication method comprises the following steps of (1) cleaning a substrate; (2) depositing the bottom electrode on the substrate by employing a physical vapor deposition technique; (3) forming the organic / inorganic hybrid perovskite thin film material on the bottom electrode as a resistance changing functional layer by techniques such as spin coating, dip coating and vacuum evaporation; and (4) depositing the top electrode on the resistance changing functional layer by employing the physical vapor deposition technique. According to the resistive random access memory, the structure is simple, and low-temperature and low-cost fabrication can be carried out; and the fabricated device has the technical advantages of large memory window, low conversion voltage, high conversion speed, multi-value storage capability, favorable thermal stability and device durability and the like.