Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Resistive random access memory based on organic/inorganic hybrid perovskite material and fabrication method of resistive random access memory

A technology of resistive memory and perovskite materials, applied in the direction of electrical components, etc., to achieve high transition speed, good multi-value storage capacity, and large storage window effects

Active Publication Date: 2016-07-20
GRIMAT ENG INST CO LTD
View PDF3 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, resistive memory based on such organic / inorganic hybrid perovskite structure materials has not been reported yet.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory based on organic/inorganic hybrid perovskite material and fabrication method of resistive random access memory
  • Resistive random access memory based on organic/inorganic hybrid perovskite material and fabrication method of resistive random access memory
  • Resistive random access memory based on organic/inorganic hybrid perovskite material and fabrication method of resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment has Ag / CH 3 NH 3 PB 3 / Pt structure resistive memory, in which Pt is used as the bottom electrode, CH 3 NH 3 PB 3 As the storage function layer, Ag is used as the top electrode. The specific manufacturing process is as follows: (1) The Pt bottom electrode is formed by magnetron sputtering, and the specific preparation conditions are as follows: background vacuum 2×10 -4 Pa, the working pressure is 1pa, the sputtering power is 60W, the working gas is Ar gas, the deposition time is 5min, and the thickness of the formed Pt bottom electrode film is 100nm; (2) CH 3 NH 3 PB 3 storage functional layer, the specific preparation conditions are as follows: 0.395g of CH 3 NH 3 I and 1.157 g of PbI 3 The spin-coating precursor solution was prepared by dissolving 2 mL of butyrolactone, and the prepared spin-coating precursor solution was ultrasonically stirred at 70 °C for 12 hours. The spin-coating precursor solution was spin-coated on the prepared substr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a resistive random access memory based on an organic / inorganic hybrid perovskite material and a fabrication method of the resistive random access memory. The resistive random access memory comprises a bottom electrode, a top electrode and a resistance changing functional layer material, wherein the resistance changing functional layer material is arranged between the bottom electrode and the top electrode and comprises one layer or multiple layers of organic / inorganic hybrid perovskite thin film materials. The fabrication method comprises the following steps of (1) cleaning a substrate; (2) depositing the bottom electrode on the substrate by employing a physical vapor deposition technique; (3) forming the organic / inorganic hybrid perovskite thin film material on the bottom electrode as a resistance changing functional layer by techniques such as spin coating, dip coating and vacuum evaporation; and (4) depositing the top electrode on the resistance changing functional layer by employing the physical vapor deposition technique. According to the resistive random access memory, the structure is simple, and low-temperature and low-cost fabrication can be carried out; and the fabricated device has the technical advantages of large memory window, low conversion voltage, high conversion speed, multi-value storage capability, favorable thermal stability and device durability and the like.

Description

technical field [0001] The invention relates to a resistive memory based on an organic / inorganic hybrid perovskite material and a preparation method thereof, belonging to the technical field of semiconductor nonvolatile memory. Background technique [0002] With the advent of the information age, human life has been closely related to computer technology. The rapid growth of information promotes the continuous development of information science and technology towards higher goals. As the core technology of the semiconductor industry, the development of memory has always attracted much attention and is a hot spot in the field of electronic device research. Every breakthrough in the development of memory technology will bring leap-forward development to the semiconductor industry. Memory has been developing towards higher storage density, faster operating speed, lower cost, and lower power consumption. [0003] With the continuous development of technology, traditional memor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 赵鸿滨屠海令
Owner GRIMAT ENG INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com