Improved NiO-based resistive random access memory (RRAM) and manufacturing method thereof

Abstract

The invention belongs to the technical field of integrated circuits and particularly relates to an improved NiO-based resistive random access memory (RRAM) and a manufacturing method thereof. A memory unit comprises a substrate and a metal-insulator-metal (MIM) structure; a top electrode is a metal membrane which is made of copper, aluminum and the like and can be used in an interconnecting process; and a variable-resistance insulator is an Al2O3 / NiO / Al2O3 medium membrane with a nano laminated structure. The MIM structure in the invention presents stable double-resistance state transition and memory characteristic under the condition of direct current voltage continuous scanning excitation; and compared with the memory unit of an RRAM which adopts a medium membrane only with a NiO single-medium layer structure, the memory unit has a larger memory window and higher resistance value stability. The memory unit has good prospect in practical application to a NiO material RRAM. The invention further provides a manufacturing method of the memory unit.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a NiO-based resistance random access memory and a preparation method thereof. technical background [0002] Non-volatile storage technology is currently a research hotspot in the field of information storage technology. With the further shrinking of the feature size of semiconductor devices, the amount of charge stored in traditional floating-gate transistor memory is reduced, the write voltage is difficult to drop, and the reliability is also changing. Poor, so the development of new non-volatile memory becomes very important. [0003] In recent years, research on a resistive random access memory (RRAM) technology based on material resistance changes has become the focus of attention. Resistive RAM (RRAM) uses material modification to make the memory have different resistance states to store data. figure 1 It is an equivalent circuit diagram of a resistive memory de...

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Problems solved by technology

[0002] Non-volatile memory technology is currently a research hotspot in the field of information storage technology. With the further shrinking of the feature size of semiconductor devices, the amount of charge stored in traditional floating gate transistor memory is reduced, the write voltage is difficult to drop, and the reliability is also changing. Poor, so the development of new non-volatile memory becomes very important

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