The invention discloses a multi-section-type (FabryPerot) cavity single
wavelength laser based on deeply etched grooves. The
laser disclosed by the invention is structurally characterized by at least comprising a
laser waveguide, a first deeply etched reflecting surface and a second deeply etched reflecting surface which are respectively positioned at two ends of the laser
waveguide, and a deeplyetched groove array arranged between the first deeply etched reflecting surface and the second deeply etched reflecting surface, wherein the deeply etched groove array is composed of 2-6 deeply etched grooves; the laser is manufactured on a
semiconductor epitaxial
wafer, and respectively comprises a lower cladding layer, a
quantum well layer, an upper cladding layer and certain auxiliary
layers among the lower cladding layer, the
quantum well layer, the upper cladding layer
layers from bottom to top; and the laser
waveguide is divided into a plurality of sections of independent waveguides by the deeply etched groove array, the first deeply etched reflecting surface and the second deeply etched reflecting surface, each section of waveguide is covered with an
electrode, and each
electrode is respectively injected with a current so as to control the laser
wavelength and power. Compared with the background technology, the laser disclosed by the invention has the advantages that the production process is simpler and cheaper due to only once epitaxial growth, the manufacturing error is smaller, the
energy consumption for the apparatus operation is less, and the
laser line width is narrower.