Asymmetric phase shift grating-based narrow linewidth DFB (Described Feedback) semiconductor laser

Abstract

The invention relates to an asymmetric phase shift grating-based narrow linewidth DFB (Described Feedback) semiconductor laser which comprises a buffer layer, a lower waveguide layer, a multiple-quantum well active layer, a grating layer, an upper waveguide layer, a package layer, a contact layer, a P electrode and an N electrode, wherein the lower waveguide layer is manufactured on the buffer layer, the multiple-quantum well active layer is manufactured on a lower package layer, the grating layer is manufactured on the multiple-quantum well active layer, the upper waveguide layer is manufactured on the grating layer, the package layer is manufactured on the upper waveguide layer, the contact layer is manufactured on the package layer, the P electrode is manufactured on the contact layer, and the N electrode is manufactured on the back surface of the buffer layer. The asymmetric phase shift grating-based narrow linewidth DFB semiconductor laser is capable of overcoming the influence of the outer reflected light to the inside of a laser device; and the laser linewidth is reduced, the frequency stability of the laser is increased and the effect of output power is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a narrow line width DFB semiconductor laser based on an asymmetrical phase shift grating. Background technique [0002] Narrow linewidth semiconductor lasers have very important application value. (1) In terms of cutting-edge scientific research, it can be used in high-precision spectral measurement, quantum / atomic frequency standards and other fields; (2) In the field of national defense and security, it can be used in lidar systems, laser communications, photoelectric countermeasures, photonic navigation, etc.; (3) In the field of Internet of Things and high-speed communication, high-stability narrow-linewidth lasers are the core devices of optical fiber high-sensitivity optical fiber sensing systems and coherent optical communication systems. Compared with fiber lasers and YAG lasers, semiconductor lasers have the advantages of high reliability, long life, low energy c...

AI Technical Summary

Problems solved by technology

At present, the grating structure of DFB semiconductor lasers introduces a λ / 4 or λ / 8 phase shift at the center of the uniformly distributed DFB grating, but this structure is affected by the efficiency of the laser, and the output power is often not high, and due to the laser cleavage surface The asymmetry of the laser and the asymmetry of the coating on the end face will easily cause the instability of the laser emission wavelength, which cannot meet the performance requirements of the laser in the optical communication system.

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