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40results about How to "High side mode suppression ratio" patented technology

V type coupling cavity wavelength switchable semiconductor laser

The invention discloses a V-type coupling cavity wavelength switchable semiconductor laser, comprising two optical resonant cavities, each comprising a segment of light waveguide and partial reflecting elements at the two ends; the two segments of light waveguides are arranged on a chip to form a V shape, there is no coupling at the opening end but there is a certain cross coupling at the closed end to make the laser have optimum single-mode selectivity; the first optical resonant cavity has a fixed optical length to make its resonant frequency be on a series of independent equidistant channels; the second optical resonant cavity has a certain length difference from the first one, and by changing effective refractivity of partial waveguides in the second optical resonant cavity, it can make the laser wavelengths mutually switched on a series of channels determined by the first optical resonant cavity. And the laser can further comprise one or two branch couplers or directional couplers added outside the cavity to improve coupling efficiency of external devices, and providing added modulating or space switching functions.

Topological bulk laser based on energy band inversion light field limiting effect and method

The invention discloses a topological bulk laser based on an energy band inversion light field limiting effect and a method, being characterized in that a topological state photonic crystal which generates a dipole mode and a quadrupole mode near the center of a Brillouin zone and generates energy band reversing and a topological moderate state photonic crystal which does not generate energy bandreversing are adopted; the spliced boundary can generate reflection and limitation effects of a light field, and the boundary encircles to form a closed curve, so that a laser resonant cavity is formed in the boundary. According to the topological bulk laser based on an energy band inversion light field limiting effect and the method, single-mode vertical laser emission with high directivity, lowthreshold, narrow linewidth and high side-mode rejection ratio can be realized; the process difficulty and the preparation cost are reduced; the problems of heat dissipation and electric injection areimproved; the stability of components is improved, and the service life is prolonged; after copying to an electric injection active material system, the topological bulk laser based on an energy bandinversion light field limiting effect can obtain the vertical emitting laser with controllable size, high directivity, low threshold, narrow linewidth and high side mode rejection ratio; and the topological bulk laser based on an energy band inversion light field limiting effect can be applied to the fields of optical communication, solid-state lighting, laser radar, substance detection, medicaldiagnosis and the like.
Owner:PEKING UNIV

Hybrid silicon-based whispering gallery mode microcavity laser

The invention discloses a hybrid silicon-based whispering gallery mode microcavity laser which adapts to a light source part of a silicon-based photonic integrated circuit. The hybrid silicon-based whispering gallery mode microcavity laser comprises a silicon-based waveguide part and an III-V semiconductor gain part. The III-V semiconductor gain part is formed on the silicon-based waveguide part. The silicon-based waveguide part is in an SOI (silicon-on-insulator) structure with silicon, silicon dioxide and silicon. The silicon-based waveguide part is made into a triangular, rectangular, circular or waveguide-coupled output form to allow for longitudinal mode control. The III-V semiconductor gain part made of gain material is bonded to the SOI structure directly and matches with the SOI structure to form evanescent field coupling output. The hybrid silicon-based whispering gallery mode microcavity laser has the advantages that single-mode output of laser source on a silicon-based semiconductor surface is achieved by a right-triangular, square or round whispering gallery mode microcavity, cavity surface need not be split, large-scale processing is facilitated, optical coupling output and single longitudinal mode operation are easy to implement, and the laser is simpler in process and higher in practicality than the conventional single-mode lasers.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Method for manufacturing 980nm single-mode wavelength stabilized semiconductor laser

The invention provides a method for manufacturing a 980nm single-mode wavelength stabilized semiconductor laser, which comprises the following steps of: 1, providing a gallium arsenide substrate; 2, sequentially preparing a lower N-type aluminum gallium arsenide limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, a first upper P-type limiting layer, an etchingstopping layer, a second upper P-type limiting layer and a P-type cap layer on the gallium arsenide substrate; 3, preparing an etched mask pattern on the surface of the P-type cap layer by adopting aphotoetching technology; and 4, performing downward etching on the P-type cap layer to form a ridge waveguide structure, and simultaneously performing longitudinal etching until reaching the surface of the etching stopping layer on one side of the upper surface of the ridge waveguide structure to form a plurality of aperiodically distributed groove structures to finish the manufacturing of the laser.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Astronomical optical frequency comb device based on all-solid femtosecond laser

The invention provides an astronomical optical frequency comb device based on an all-solid femtosecond laser. The astronomical optical frequency comb device based on the all-solid femtosecond laser comprises the all-solid femtosecond laser, an optical fiber amplifier and a Fabry-Perot cavity filter, wherein the all-solid femtosecond laser is used for generating a first laser pulse sequence with first repetition frequency, a component with selected wavelength is contained in the first laser pulse sequence, the optical fiber amplifier is used for amplifying power of the first laser pulse sequence, the working wavelength of the optical fiber amplifier comprises the selected wavelength, the Fabry-Perot cavity filter is used for carrying out filter on the first laser pulse sequence to output a second laser pulse sequence with second repetition frequency, and the second repetition frequency is larger than the first repetition frequency. The astronomical optical frequency comb device based on the all-solid femtosecond laser is mainly used for carrying out high-precision calibration on high-resolution astronomical spectrometers. Compared with a traditional calibration mode and an astronomical optical comb calibration mode based on an optical fiber laser, the astronomical optical frequency comb device based on the all-solid femtosecond laser has lower phase noise and side-mode suppression and enables the astronomical spectrometer to obtain higher radial velocity accuracy.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI

Distribution feedback external cavity narrow line board semi-conductor laser for achieving frequency self-locking

The invention discloses a distribution feedback external cavity narrow line board semi-conductor laser for achieving frequency self-locking, which comprises a semi-conductor laser (a), a collimating lens (b), a polarizingprism (c), a first 1 / 4 wave plate (d), an F-P etalon (e), a second 1 / 4 wave plate (f), a front cavity reflector (g), an isolator (h), a focusing lens (f), and an optical fiber (j). The laser disclosed by the invention can effectively narrow the light width of a light source, and achieve the frequency self-locking of the external cavity semi-conductor laser.
Owner:山东中科际联光电集成技术研究院有限公司

Tunable semiconductor laser

The invention provides a tunable semiconductor laser. A front multi-phase shift digital cascade Bragg grating and a rear multi-phase shift digital cascade Bragg grating are respectively manufactured in an upper limit layer of a front grating area and an upper limit layer of a rear grating area and are respectively manufactured through adding phase shift in an adjacent sampling period of a digital cascade Bragg grating. Peak homogeneity of a reflectance spectrum of the multi-phase shift digital cascade Bragg grating is good. Due to the fact that the multi-phase shift digital cascade Bragg grating is in cascade connection with the reflectance spectrum, the number of reflecting channel in the bandwidth of the reflectance spectrum is increased by several times. Meanwhile, multi-phase shift technology is adopted so that the number of reflecting channel of the reflectance spectrum of the multi-phase shift digital cascade Bragg grating is increased by several times again so that a tuning range that the laser can reach is wider.
Owner:HUAZHONG UNIV OF SCI & TECH

Distributed feedback semiconductor laser device

A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.
Owner:FURUKAWA ELECTRIC CO LTD

Electro-optical bidirectional tunable finite impulse response (FIR) filter and discrete voltage determination method thereof

The invention relates to the technical field of integrated optical devices and the like, and aims to design a tunable filter for an optical network node, which consists of a polarization beam splitter and a polarization converting unit, wherein the polarization beam splitter is formed by an interdigital electrode group cascade structure which utilizes the N-level periodical distribution controlled by discrete voltages on X-tangent Y-transfer titanium scattered lithium niobate waveguides, the periodical perturbation of the refractive index is generated through regulating all the discrete voltages on the Y direction, so the polarization conversion of a standard TE mode and a standard TM mode is carried out when the wavelengths satisfy the phase matching rule, and the filtering is realized through the polarization beam splitter. The invention simultaneously provides a solving method of the discrete voltage of the filter, so the electro-optical bidirectional finite impulse response (FIR) filtering is realized. The invention has the advantages of quick response speed, high side mode suppression ratio, good rectangular degree and tunable pass band width.
Owner:TIANJIN UNIV

Wavelength division-time division hybrid passive optical network system

The invention provides a wavelength division-time division hybrid passive optical network system, which comprises a central office, a plurality of optical network units and a remote node, wherein the remote node is positioned between the central office and the plurality of optical network units; the central office is provided with a plurality of light sources for emitting downlink signal light of various wavelengths, a plurality of receivers for receiving uplink signal light emitted by the plurality of optical network units and transmitted by the remote node respectively, and a plurality of multiplexer / demultiplexers for multiplexing and demultiplexing the downlink signal light and the uplink signal light; the remote end node is used for multiplexing the downlink signal light from the central office and demultiplexing the uplink signal light from the optical network units; and each optical network unit is provided with an internal annular coupler, a light separating unit for separating downlink signal light into signal light and injection light, a downlink data receiver for receiving separated signal light, and an MEMS (Micro Electro Mechanical System) tunable laser for receiving injection light and generating uplink signal light.
Owner:BEIJING UNIV OF POSTS & TELECOMM

V type coupling cavity wavelength switchable semiconductor laser

The invention discloses a V-type coupling cavity wavelength switchable semiconductor laser, comprising two optical resonant cavities, each comprising a segment of light waveguide and partial reflecting elements at the two ends; the two segments of light waveguides are arranged on a chip to form a V shape, there is no coupling at the opening end but there is a certain cross coupling at the closed end to make the laser have optimum single-mode selectivity; the first optical resonant cavity has a fixed optical length to make its resonant frequency be on a series of independent equidistant channels; the second optical resonant cavity has a certain length difference from the first one, and by changing effective refractivity of partial waveguides in the second optical resonant cavity, it can make the laser wavelengths mutually switched on a series of channels determined by the first optical resonant cavity. And the laser can further comprise one or two branch couplers or directional couplers added outside the cavity to improve coupling efficiency of external devices, and providing added modulating or space switching functions.
Owner:HANGZHOU LIGHTIP TECH CO LTD

Method for preparing wave guide and grating structure of adjustable distributive feedback quantum cascade laser and above said grating

InactiveCN1945910AAppropriate distribution of feedback coupling coefficientsReduced waveguide lossOptical wave guidanceLaser detailsGratingQuantum cascade laser
This invention relates to a waveguide and a grating structure of an adjustable distribution feed back quanta cascade laser obtaining low threshold value current density and high side mode suppression ratio and a method for preparing first order grating of laser meeting the requirement, in which, the laser waveguide and the grating structure is a limit structure in the waveguide made up of a deep first order grating and a thin heavy doped semiconductor layer, said grating corrosion technology is to utilize the InGaAs / InP structure as the corrosion sacrificial layer of the grating and select different corroding liquid matches to get a grating structure with the depth adjustable and accuracy controllable.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Method for generating single-frequency oscillation microwave signal and single-frequency oscillation microwave signal source

The invention discloses a method for generating a single-frequency oscillation microwave signal and a single-frequency oscillation microwave signal source, and the method is based on the following technical conception: constructing an intensity modulation subsystem based on an electro-optical phase modulator through employing the stimulated Brillouin scattering principle to replace an electro-optical intensity modulator in a photoelectric oscillator, and achieving an electro-optical intensity modulation function through the intensity modulation subsystem; stimulated Brillouin scattering is generated through nonlinearity of a high-linearity optical fiber in the excitation intensity modulation subsystem; scattered light is subjected to reverse transmission and then subjected to beat frequency interference with an optical carrier to form a microwave signal, an oscillation mode consistent with the frequency of the microwave signal is locked to be a main mode based on the vernier caliper effect, and a side mode derived from system white noise is suppressed for the first time based on the mode competition mechanism; meanwhile, in the circulation process, a main mode oscillation signal isamplified through a Brillouin scattering gain area, a side mode oscillation signal is suppressed again through a loss area and an intrinsic loss area, and a single-frequency oscillation microwave signal with a high side mode suppression ratio is generated after dual suppression.
Owner:HUNAN INST OF TECH

Preparation method of GaN-based low-order surface grating DFB laser

The invention discloses a preparation method of a GaN-based low-order surface grating DFB laser. The method comprises the following steps: depositing a SiO2 mask on an epitaxial wafer of the GaN-basedlaser; preparing uniform Bragg gratings on the surface of the substrate by using a nanoimprint technique, fabricating strip patterns by photolithography, and forming a composite structure of ridges and gratings; etching the GaN, and etching the epitaxial wafer through a strip photoresist and the grating SiO2 composite structure mask to form a surface composite grating structure having ridges; andpreparing upper and lower electrode structures of a laser chip to obtain a GaN-based DFB semiconductor laser. The method etches the ridge patterns required by the grating preparation and at the laterstage of the process at the same time, and combines the nano imprint template and the lithography pattern design respectively, which can design and prepare GaN-based DFB lasers with different wavelengths, different order gratings and different sizes, and can greatly reduce the cost of GaN-based DFB semiconductor lasers and effectively improve the uniformity of products.
Owner:INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS

Preparation method for wide-side 808nm divided mode semiconductor laser structure

The utility model provides a preparation method for a wide-side 808nm divided mode semiconductor laser structure, which comprises the steps which are as follows: a gallium arsenic underlay is obtained; an N-type gallium aluminum arsenide lower limit layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, a first P-type upper limit layer, an etching cut-off layer, a second P-type upper limit layer, and a P-type cap layer; photolithography is adopted to prepare an etched mask graph on the surface of the P-type cap layer; downward etching is implemented on the P-type cap layer to form a convex wide-side structure; meanwhile, longitudinal etching is implemented at one side of the upper surface of the convex wide-side structure to form a plurality of grooving structures distributed in an aperiodic way; and the etching depths of the grooving structures arrive at the surface of the etching cut-off layer to complete device preparation.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Non-disk cavity semiconductor laser with wavelength choice grating

ActiveCN104104010AAchieve single wavelength outputNarrow line widthLaser optical resonator constructionGratingGain
The invention discloses a non-disk cavity semiconductor laser with a wavelength choice grating, and belongs to the technical field of microcavity lasers. The lasing spectrum of the existing structural microcavity laser has the characteristic of multi-wavelength lasing, so that the laser cannot be used in the field requiring single wavelength work. In the non-disk cavity semiconductor laser, an upper waveguide layer, an active gain region and a lower waveguide layer are provided with outer boundaries with the same shape; a curve of the outer boundaries is a Limacon curve; a polar equation of the Limacon curve is as shown in the specification, wherein R(phi) is the polar radius, phi is a polar angle, R0 is the characteristic radius, and epsilon is a deformation factor and is equal to 0.35-0.45; a starting point of the Limacon curve is 0 degree; and two oriented optical coupling output positions are 90 degrees and 270 degrees respectively. The non-disk cavity semiconductor laser is characterized in that the wavelength choice grating is arranged on the edge of the upper waveguide layer corresponding to 90 degrees or / and 270 degrees of the outer boundaries. The scheme can obtain single wavelength light output.
Owner:CHANGCHUN UNIV OF SCI & TECH

Mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection

The invention discloses a mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection, comprising a silicon substrate, a silicon dioxide layer formed on the silicon substrate, a silicon annular waveguide layer formed on the silicon dioxide layer, a bonding buffer layer formed on the silicon waveguide layer, an N type contact layer formed on the bonding buffer layer, an N type electrode formed in the middle on the N type contact layer, an annular quantum well active region formed in an annular part of the N type electrode on the N type contact layer, a P type annular contact layer formed on the annular quantum well active region, a P type annular cover layer formed on the P type annular contact layer and a P type electrode formed on the P type annular cover layer. The structure is in high density integration, single longitudinal mode working and high-efficiency coupling outputting; and more importantly, according to the mixed silicon single mode annular cavity laser disclosed by the invention, technological steps of conventional DFB distributed feedback grating manufacturing, III-V group material secondary epitaxy and the like are saved in technological processing, and the complexity is lowered.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Semiconductor laser unit with pectinate current distribution and manufacturing method thereof

The invention relates to a semiconductor laser unit with pectinate current distribution and a manufacturing method thereof. The semiconductor laser unit comprises a substrate, a metal contact layer and an ohmic contact layer; a resistive pectinate distribution structure is adopted for the substrate or the metal contact layer or the ohmic contact layer, or the resistive pectinate distribution structure is adopted for the substrate and the metal contact layer, or the resistive pectinate distribution structure is adopted for the substrate and the ohmic contact layer, or the resistive pectinate distribution structure is adopted for the metal contact layer and the ohmic contact layer, or the resistive pectinate distribution structure is adopted for the substrate, the metal contact layer and the ohmic contact layer. The semiconductor laser unit with a gain-refractive index combined coupling grating is realized by manufacturing a metal contact region or an ohmic contact region of the laser unit to be of the resistive pectinate distribution structure. A secondary epitaxy technology may not be involved, so that the manufacturing difficulty of the device is lowered, and meanwhile many advantages of a gain coupling grating semiconductor laser unit are reserved.
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

Distribution feedback external cavity narrow line board semi-conductor laser for achieving frequency self-locking

The invention discloses a distribution feedback external cavity narrow line board semi-conductor laser for achieving frequency self-locking, which comprises a semi-conductor laser (a), a collimating lens (b), a polarizingprism (c), a first 1 / 4 wave plate (d), an F-P etalon (e), a second 1 / 4 wave plate (f), a front cavity reflector (g), an isolator (h), a focusing lens (f), and an optical fiber (j). The laser disclosed by the invention can effectively narrow the light width of a light source, and achieve the frequency self-locking of the external cavity semi-conductor laser.
Owner:山东中科际联光电集成技术研究院有限公司

Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide

PendingCN113809634AImprove performanceLarge wavelength tunable rangeOptical wave guidanceLaser detailsConvertersGrating
The invention relates to the technical field of optical devices, and provides a hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide. The laser comprises a reflective semiconductor optical amplifier and a lithium niobate photonic chip, and is characterized in that the lithium niobate photonic chip comprises a spot size converter, a vernier filter, a Bragg reflection grating and an output waveguide which are connected in sequence; the output end of the reflective semiconductor optical amplifier is coupled with the end face of the input end of the spot size converter; the vernier filter is covered with a nickel-chromium alloy electrode and a gold electrode. and the output laser wavelength is tuned by applying voltage to the nickel-chromium alloy electrode and the gold electrode. The hybrid integrated external cavity tunable laser can be formed by adopting the reflection type semiconductor optical amplifier and the lithium niobate photon chip in an end face coupling mode, the hybrid integrated external cavity tunable laser has the advantage of being simple in manufacturing process, and the output laser wavelength can be tuned by applying voltage to the nickel-chromium alloy electrode and adjusting the voltage.
Owner:SUN YAT SEN UNIV

Reflecting Lyot filter based on circular polarizers

The invention discloses a reflecting Lyot filter based on ideal circular polarizers and belongs to the field of optical fiber communication. In the prior art, most of Lyot filters are transmission type filters, a single Lyot filter requires two polarizers, the angles of the polarizers are required to be aligned, the cost is high, and the polarizers are difficult to adjust. According to the filter, incident light enters each birefringence fiber through the corresponding fiber type circular polarizer, the tail part of each birefringence fiber is connected with a reflection device such as a high reflecting film, a light-ring-shaped mirror, a Faraday rotating mirror and the like, the incident light is emitted out from the starting end of each birefringence fiber after being reflected and then passes through the corresponding circular polarizer at the incident end, then reflection light is detected, the cost is low, adjustment and alignment of light paths are not required, and the reflecting Lyot fiber is less influenced by the environment.
Owner:HUAZHONG UNIV OF SCI & TECH

Wavelength division-time division hybrid passive optical network system

InactiveCN102412905BReduced output wavelength requirementsLow costWavelength-division multiplex systemsFibre transmissionMultiplexerEngineering
The invention provides a wavelength division-time division hybrid passive optical network system, which comprises a central office, a plurality of optical network units and a remote node, wherein the remote node is positioned between the central office and the plurality of optical network units; the central office is provided with a plurality of light sources for emitting downlink signal light of various wavelengths, a plurality of receivers for receiving uplink signal light emitted by the plurality of optical network units and transmitted by the remote node respectively, and a plurality of multiplexer / demultiplexers for multiplexing and demultiplexing the downlink signal light and the uplink signal light; the remote end node is used for multiplexing the downlink signal light from the central office and demultiplexing the uplink signal light from the optical network units; and each optical network unit is provided with an internal annular coupler, a light separating unit for separating downlink signal light into signal light and injection light, a downlink data receiver for receiving separated signal light, and an MEMS (Micro Electro Mechanical System) tunable laser for receiving injection light and generating uplink signal light.
Owner:BEIJING UNIV OF POSTS & TELECOMM

Tunable photoelectric oscillator based on PT symmetric combination with high-Q resonator

The invention discloses a tunable photoelectric oscillator based on PT symmetric combination with a high-Q resonator, and belongs to the field of microwave photonics. The tunable photoelectric oscillator comprises a continuous light laser light source, a polarization controller, a phase modulator, a high-Q resonator, a Mach-Zehnder interferometer, a photoelectric detector, an electric amplifier and an electric power divider. a light carrier output by the laser enters the phase modulator, a microwave signal is modulated to the light carrier through the phase modulator and input to the high-Q resonator, a tunable microwave photonic filter is obtained, delay and preliminary mode selection are performed on the microwave signal, mode selection is further enhanced in combination with PT symmetric breaking on the basis, finally, a microwave signal carried on an optical signal is detected through a photoelectric detector, positive feedback is introduced through the photoelectric oscillator loop, and the microwave signal is finally output. According to the invention, the high-Q resonator is used for time delay and preliminary mode selection, and PT symmetric breaking enhancement mode selection is further combined, so that the output frequency tunable photoelectric oscillator is realized.
Owner:HUAZHONG UNIV OF SCI & TECH

Method for preparing wave guide and grating structure of adjustable distributive feedback quantum cascade laser and above said grating

InactiveCN100405681CAppropriate distribution of feedback coupling coefficientsReduced waveguide lossOptical wave guidanceLaser detailsGratingQuantum cascade laser
This invention relates to a waveguide and a grating structure of an adjustable distribution feed back quanta cascade laser obtaining low threshold value current density and high side mode suppression ratio and a method for preparing first order grating of laser meeting the requirement, in which, the laser waveguide and the grating structure is a limit structure in the waveguide made up of a deep first order grating and a thin heavy doped semiconductor layer, said grating corrosion technology is to utilize the InGaAs / InP structure as the corrosion sacrificial layer of the grating and select different corroding liquid matches to get a grating structure with the depth adjustable and accuracy controllable.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Spectrometer calibration spectral line generator and generation method thereof

The invention discloses a spectrometer calibration spectral line generator and a generation method thereof. A high-repetition-frequency femtosecond fiber laser is adopted, the output power is high, the pulse is short, a super-continuum spectrum is directly generated in a photonic crystal fiber, and the system is simplified; another set of device required for generating an octave spectrum is omitted, so that the system is further simplified; the side mode rejection ratio after filtering of an ultra-stable cavity is high, the noise is low, and distinguishing in a spectrograph is facilitated; asthe light of different spectral bands is subjected to ultra-stable cavity filtering and frequency interval multiplication in different spectrum elimination intervals at the same time, calibration spectra of different bands and different frequency intervals can be obtained at the same time, the spectra can be clearly distinguished in the whole spectrograph detection interval, and the enough numberof calibration spectral lines are provided; and a spectrum flattening reflector is adopted, a common device of a grating and a spatial modulator is omitted, the reflector eliminates too high spectrumcomponents, space and cost are saved, and stability and operability of the system are also improved.
Owner:PEKING UNIV

Wrinkle type apodization waveguide Bragg grating filter and manufacturing method thereof

The invention provides a wrinkle type apodization waveguide Bragg grating filter, comprising a substrate, a lower cladding layer, an upper cladding layer, a straight waveguide and a lower grating. The width of the lower grating is gradually increased according to a bell-shaped envelope function; the width of a grating wire located at an end part is less than the width of the straight waveguide; and the width of the grating wire located at a middle part is more than the width of the straight waveguide. The invention further provides a manufacturing method of the filter, comprising the following steps of: coating the lower cladding layer on the substrate; manufacturing an anti-etching layer; spinning negative photoresist; carrying out mask exposure; generating a structure of the lower grating through interference; developing and corroding an area of the lower grating; etching the lower grating; removing the residual negative photoresist and corroding; spinning a coating core layer material; evaporating an aluminum layer; etching the straight waveguide; developing an area outside the straight waveguide, and manufacturing the straight waveguide through corrosion; rotatably coating the upper cladding layer, and curing and drying in a vacuum manner. The filter has apodization effects with high reflectivity and high side-mode suppression ratio.
Owner:SOUTHEAST UNIV

Method for generating single-frequency oscillating microwave signal and single-frequency oscillating microwave signal source

A method for generating a single-frequency oscillating microwave signal and a single-frequency oscillating microwave signal source, based on the following technical idea: applying the principle of stimulated Brillouin scattering and constructing an intensity modulation subsystem based on an electro-optic phase modulator to replace the electro-optic intensity modulation in an optoelectronic oscillator and use the intensity modulation subsystem to realize the electro-optic intensity modulation function; stimulate the Brillouin scattering by exciting the nonlinearity of the highly linear optical fiber in the intensity modulation subsystem, and the scattered light is transmitted back and interferes with the optical carrier to form a microwave signal. Based on the vernier caliper effect, the oscillation mode consistent with the frequency of the microwave signal is locked into the main mode, and based on the mode competition mechanism, the side mode originating from the white noise of the system is suppressed for the first time; at the same time, in the cycle process, the main mode The oscillating signal is amplified through the gain region of Brillouin scattering, while the side-mode oscillating signal is suppressed again through the loss region and the intrinsic loss region. After double suppression, a single-frequency oscillating microwave signal with a high side-mode suppression ratio is generated.
Owner:HUNAN INST OF TECH

High-performance low-cost DFB laser epitaxial wafer and manufacturing method thereof

A high-performance low-cost DFB laser epitaxial wafer comprises a substrate, a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper limiting layer, an upper buffer layer, a corrosion barrier layer, a cladding, a grating manufacturing layer, a secondary epitaxial layer, a barrier gradient layer and an ohmic contact layer which are sequentially stacked from bottom to top. The grating manufacturing layer is divided into a grating area and a non-grating area. The invention provides a high-performance low-cost DFB laser epitaxial wafer and a manufacturing method thereof. The high-performance low-cost DFB laser epitaxial wafer can effectively restrain the space hole burning effect of a laser, improve the side mode rejection ratio of the DFB laser, optimize the spectral mode of the DFB laser, reduce the manufacturing requirement of a grating photoetching plate, improve the product yield of the DFB laser, and is low in manufacturing cost.
Owner:全磊光电股份有限公司

Ultra-Narrow Linewidth Lasers

The invention provides an ultra-narrow line width laser device. The laser device comprises a laser-generating gain device, an optical coupler, and two feedback compression devices, wherein the laser-generating gain device is connected to the one end of the optical coupler, and the other end of the optical coupler is connected with output optical fibers and the feedback compression devices. By designing cavity lengths and a cavity length difference value of the feedback compression devices, single longitudinal mode narrow line-width laser output is obtained, and a side-mode suppression ratio of output lasers is improved; generated lasers of preset quantity are transmitted to the optical coupler by the laser-generating gain device, and the lasers are transmitted to the corresponding feedback compression devices by the optical coupler; each feedback compression device narrows incident layer line width, and the narrowed laser line width is transmitted back to the laser-generating gain device by the optical coupler to be subjected to gain amplification; after gain amplification, the lasers go through the optical coupler and is transmitted to the feedback compression devices to circularly narrow the laser line width till the lasers of preset quantity are all transmitted out through the output optical fibers.
Owner:CHONGQING UNIV

Terahertz vector vortex quantum cascade laser and preparation method thereof

The invention relates to a terahertz vector vortex quantum cascade laser which comprises a substrate and a bonding metal layer located on the substrate, and a seed laser area and a bus waveguide which are arranged in the length direction of the laser and connected with each other are arranged on the bonding metal layer. One side of the bus waveguide is provided with a resonant ring and a transition electrode which are arranged along the length direction of the laser and are separated from each other, a metal air bridge is erected between the resonant ring and the transition electrode, and the end part of the seed laser area and the end part of the bus waveguide are provided with absorption boundaries. The invention also provides a preparation method of the terahertz vector vortex quantum cascade laser, the terahertz vector vortex laser with relatively high mode purity can be directly emitted, hollow annular far-field light spots can be realized, the emitted vector vortex light can be decomposed into left-handed and right-handed circularly polarized light carrying orbital angular momentum, the polarization characteristic is angular polarization, and the advantages of high stability, high excitation efficiency, narrow line width and high side-mode suppression ratio are achieved.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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