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Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide

A technology for tuning lasers and integrating external cavities, applied in semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve the problems of small wavelength tunable range and complex manufacturing process, and achieve large wavelength tunable range and high output power. , the effect of narrow line width

Pending Publication Date: 2021-12-17
SUN YAT SEN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] The present invention provides a hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide in order to overcome the defects of complex manufacturing process and small wavelength adjustable range described in the above prior art

Method used

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  • Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide
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  • Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide

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Embodiment 1

[0030] This embodiment proposes a hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide, such as figure 1 As shown, it is a schematic structural diagram of the hybrid integrated external cavity tunable laser based on the lithium niobate photonic waveguide of this embodiment.

[0031] The hybrid integrated external cavity tunable laser proposed in this embodiment based on lithium niobate photonic waveguide includes a reflective semiconductor optical amplifier 1 and a lithium niobate photonic chip. Among them, the lithium niobate photonic chip includes a mode spot converter 2, a phase adjustment module 3, a vernier filter 4, a Bragg reflection grating 5, and an output waveguide 6 connected in sequence; the output terminal of the reflective semiconductor optical amplifier 1 and the mode spot converter The end face coupling of the input end of 2; the vernier filter is covered with a nickel-chromium alloy electrode 402 and a gold electrode 403;...

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Abstract

The invention relates to the technical field of optical devices, and provides a hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide. The laser comprises a reflective semiconductor optical amplifier and a lithium niobate photonic chip, and is characterized in that the lithium niobate photonic chip comprises a spot size converter, a vernier filter, a Bragg reflection grating and an output waveguide which are connected in sequence; the output end of the reflective semiconductor optical amplifier is coupled with the end face of the input end of the spot size converter; the vernier filter is covered with a nickel-chromium alloy electrode and a gold electrode. and the output laser wavelength is tuned by applying voltage to the nickel-chromium alloy electrode and the gold electrode. The hybrid integrated external cavity tunable laser can be formed by adopting the reflection type semiconductor optical amplifier and the lithium niobate photon chip in an end face coupling mode, the hybrid integrated external cavity tunable laser has the advantage of being simple in manufacturing process, and the output laser wavelength can be tuned by applying voltage to the nickel-chromium alloy electrode and adjusting the voltage.

Description

technical field [0001] The invention relates to the technical field of optical devices, more specifically, to a hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide. Background technique [0002] Large-scale photonic integrated circuits (PICs) based on thin-film lithium niobate (LN) are emerging as a promising technology for realizing high-speed and high-capacity optical interconnections. Lithium niobate thin films on insulators can form low-loss waveguide devices, especially lithium niobate thin film modulators have the characteristics of low driving voltage, ultra-high electro-optic bandwidth and much smaller structure size than traditional bulk lithium niobate modulators. However, lithium niobate crystals lack light-emitting functions, and in order to realize practical optical I / O chips, they must be combined with an electrically pumped light source. [0003] In this regard, at present, high-performance lasers based on silicon-on-in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14H01S5/22H01S5/50H01S5/028H01S5/042
CPCH01S5/141H01S5/22H01S5/50H01S5/028H01S5/04252
Inventor 蔡鑫伦张仙韩雅
Owner SUN YAT SEN UNIV
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