53 results about "Hydrogen silsesquioxane" patented technology

A process for forming an intermetal dielectric, (IMD), layer, comprised of an overlying silicon oxide layer, and an underlying low k dielectric layer, such as hydrogen silsesquioxane, (HSQ), has been developed. The process features the use of a series of plasma treatments, performed in a nitrogen containing ambient, used to improve the adhesion of the IMD layer, to underlying materials. A first plasma treatment is performed on a thin insulator layer, prior to application of the HSQ layer. The plasma treatment roughens the top surface of the thin insulator layer, resulting in improved adhesion of the HSQ layer to the thin insulator layer. A second plasma treatment is performed to the HSQ layer, prior to deposition of the overlying, thick silicon oxide layer, allowing improve adhesion of the thick silicon oxide layer, to the underlying HSQ layer, to be achieved.

Silicon oxide based composite anode active materials including amorphous silicon oxides are provided. In one embodiment, the amorphous silicon oxide is represented by SiOx (where 0<x<2), has a binding energy of about 103 to about 106 eV, a silicon peak with a full width at half maximum (FWHM) ranging from about 1.6 to about 2.4 as measured by X-ray photoelectron spectrometry, and an atomic percentage of silicon greater than or equal to about 10 as calculated from an area of the silicon peak. The anode active material is a composite anode active material obtained by sintering hydrogen silsesquioxane (HSQ). Anodes and lithium batteries including the anode active material exhibit improved charge and discharge characteristics.

A method produces a smooth surface on a rough substrate. The rough substrate is coated with a film or particles of spin-on-glass (SOG) dissolved in a solvent using spin coating, spray coating or dip coating. The SOG is made to reflow by using thermal melting and solvent thinning. The reflow is done in an atmosphere containing a partial pressure of the solvent. The reflow allows the SOG to partially melt and to decrease the surface roughnesss of the film. The SOG is cured by thermal curing or UV exposure radiation curing into a hard durable and chemical inert silicon dioxide film. The SOG can be hydrogen silsesquioxane or methyl silsesquioxane dissolved in either methyl isobutyl ketone or volatile methyl siloxanes. The method can include embossing, chemical mechanical polishing, etching and functionalizing the surface. The substrate can be a cast, mould or form for producing a polymer or a glass replica.

An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1 / 3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

Methods for forming a patterned layer of amorphous carbon on a substrate are described. A layer of amorphous carbon may be formed on the substrate. A layer of electron sensitive resist may be formed on top of the amorphous carbon layer. A pattern transferred into the electron sensitive resist layer with an electron beam writing process is developed. During the electron beam writing process, electrons may be conducted away from the writing area through the amorphous carbon layer. The amorphous carbon layer may be etched through in at least one region defined by the pattern developed into the layer of electron sensitive resist material. For some embodiments, the amorphous carbon layer may be formed by chemical vapor deposition. For some embodiments, the layer of electron sensitive resist may be hydrogen silsesquioxane (HSQ).

A method for producing a magnetic recording medium, includes: forming an SOG film on a surface of a magnetic layer; forming a concavo-convex structure in the SOG film comprising one selected from a group consisting of silica glass, alkylsiloxane polymer, methyl silsesquioxane polymer, hydrogen silsesquioxane polymer and hydro alkylsiloxane polymer; etching the SOG film to expose the surface of the magnetic layer; etching the exposed surface of the magnetic layer by ion milling; and forming a filling layer on the surface of the magnetic layer while leaving a portion of the magnetic layer having been subjected to the ion milling.

Methods of fabricating dual damascene interconnections suitable for use in microelectronic devices and similar applications using a diffusion barrier layer to protect against base materials during processing are provided. The methods include the steps of: filling a via with a hydrogen silsesquioxane (HSQ)-based filler as expressed by the general chemical formula: (RSiO3 / 2)x(HSiO3 / 2)y, wherein x and y satisfy the relationships x+y=1 and 0<x<y<1, and R is selected from C4-C24 alkyl, C4-C24 alkenyl, C4-C24 alkoxy, C8-C24 alkenoxy, substituted C4-C24 hydrocarbon, non-substituted C1-C4 hydrocarbon or substituted C1-C4 hydrocarbon; and, partially etching the filler filling the via and an interlayer dielectric to form a trench, which is connected to the via in the region where the dual damascene interconnections are to be formed. Then, the filler remaining in the via is removed, and the trench and the via are filled with an interconnection material to complete the dual damascene interconnections.

A nanoimprint method is provided. A substrate and a master stamp are first provided. The substrate has a first resist layer, a transition layer, and a second resist layer orderly formed thereon. The master stamp has a nanopattern defined therein. The second resist layer is a layer of hydrogen silsesquioxane. The nanopattern of the master stamp is then pressed into the second resist layer to form a nanopattern in the second resist layer at normal temperature which is in a range from about 20 centidegrees to about 50 centidegrees. Finally, the nanopattern of the second resist layer is transferred to the substrate.

The invention discloses a method for preparing a magnetic tunnel junction (MTJ) nano column array. The method comprises the following steps of: (1) preparing a calibrator required for electron beam lithography alignment on the surface of a substrate; (2) preparing a bottom electrode layer on the upper surface of the substrate according to the calibrator, wherein the bottom electrode layer comprises a plurality of parallel bottom electrode lines; (3) coating a hydrogen silsesquioxane (HSQ) layer on the upper surface of the substrate to which the bottom electrode layer is attached, imaging the HSQ layer through electron beam exposure, and forming a plurality of insulation units on each bottom electrode line, wherein a hole is formed in the middle of each insulation unit; (4) forming a magnetic multi-layer film layer in the hole of each insulation unit sequentially through a lithography process, a sputtering process and a peeling process, wherein each magnetic multi-layer film layer sequentially comprises a free layer, a tunneling barrier layer, a pinned layer and a pinning layer from bottom to top; (5) preparing a top electrode layer on each magnetic multi-layer film layer and forming the MTJ nano column array. An insulation layer is formed by the electron beam exposure of HSQ, so that process steps are simplified, the cost is greatly reduced, and process errors are reduced.

Method of manufacturing a semiconductor device including arranging a substrate having a stacked film containing a first insulating film and a second insulating film formed thereon in an etching equipment, etching the first and second insulating film in the etching equipment, the first insulating film comprised of a nitrogen-containing film, and the second insulating film comprised of one or more kinds of films selected from a group consisting of an SiOCH film, an SiO2 film, a methyl silsesquioxane film, a hydrogen silsesquioxane film and a methyl hydrogen silsesquioxane film, while using as etching gas (a) gas including fluorocarbon represented by CxFy (x: an integer from 1 to 6, and y: an integer from 4 to 12), or (b) mixed gas of the fluorocarbon and one or more kinds of gas selected from a group consisting of O2, Ar and CO.

The invention discloses a method for manufacturing a topological type binary diffractive optical element through an HSQ (hydrogen silsesquioxane) process, which comprises: A, preparing a mask plate of the binary diffractive optical element; B, coating hydrogen silsesquioxane glue on a substrate, photoetching the substrate with the mask plate, drying, and steaming a metal film; C, selectively removing the metal film on the substrate via electrochemical corrosion; and D, drying the substrate, and thus obtaining the topological type binary diffractive optical element. Compared with the traditional etching method, the invention has the advantages that the manufacturing process is simple, the cost is low, the stability is good, higher resolution can be achieved, and the large-scale promotion and application of the method can be facilitated.

A negative electrode active material for the lithium ion secondary battery contains silicon oxide that is obtained by heat-treating, under an inert gas atmosphere, a hydrogen silsesquioxane polymer (HPSQ) obtained by allowing hydrolysis of a silicon compound represented by formula (1) and then a condensation reaction of the resulting material, contains Si, O and H, and has, in an infrared spectrum, a ratio (I1 / I2) in the range of 0.01 to 0.35 with regard to intensity (I1) of peak 1 at 820 to 920 cm−1 due to a Si—H bond to intensity (I2) of peak 2 at 1000 to 1200 cm−1 due to a Si—O—Si bond, and is represented by general formula SiOxHy (1<x<1.8, 0.01<y<0.4): HSi(R)3 (1), in which R is groups selected from hydrogen, alkoxy having 1 to 10 carbons and the like.

Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.