201results about How to "Increased etch resistance" patented technology

The invention discloses a silicon-containing copolymer forming resin which is prepared by carrying out copolymerization reaction on a comonomer in a solvent in the presence of radical initiator, and is characterized in that the molecular weight of the forming resin is 4000-100000; the molecular weight distribution is 1.4-2.8; and the comonomer mainly comprises the following components by weight percent: 40-90% of substituted phenylethylene, 0.5-20% of silicon-containing acrylic ester coupling agent and 5-60% of acidsensitivity-containing basic group monomer. In the invention, the silicon-containing acrylic ester coupling agent which can be copolymerized with the forming resin is introduced in a forming resin formula by taking poly (p-hydroxystyrene) as a base to carry out copolymerization, so as to prepare into the new forming resin. Under the action of the silicon-containing acrylic ester coupling agent unit, the new forming resin increases the adhesive property between the photoresist and a silicon wafer, and simultaneously improves the anti-corrosion performance.

The present invention relates to a novel spin coatable composition comprising(a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(═O)—), alkylcarbonyloxy (alkyl-C(═O)—O—), alkyloxycarbonyl (alkyl-O—C(═O)—), alkyloxycarbonyloxy (alkyl-O—C(═O)—O—) and mixtures of these; and a solvent.The present invention further relates to processes using the novel compositions.

The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and / or a hard mask for pattern transfer.

The invention provides a strong oxidization resisting anti-etching compound, which comprises the following components in percentage by weight: 15-80% of photosensitive resin, 0.5-15% of photoinitiator, 5-60% of diluent, 0-40% of filler, 0-20% of dyestuff or pigment and 0-20% of additive, the total percentage of all components is 100%, wherein the photosensitive resin meets two conditions at the same time: 1) a molecule comprises at least one carboxyl and at least two ethylene type unsaturated bonds, and does not comprise hydroxy, and 2) a carbon atom which is connected with a benzene ring does not have a hydrogen atom. The anti-etching compound disclosed by the invention has a strong oxidation resistance, and is particularly suitable for etching protection under the condition of an etching liquid containing a strong oxidant (such as potassium permanganate). The invention also provides a base material coated with the anti-etching compound.

A phenolic self-crosslinking polymer whose self-crosslinking reaction at a heating step is performed without additives for hardening the polymer, and a composition of resist-underlayer-film containing the same, are disclosed. The phenolic self-crosslinking polymer being selected from a group consisting of a polymer represented by Formula 1, a polymer represented by Formula 2 and a polymer represented by Formula 3:

The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and / or a hard mask for pattern transfer.

A sesquiterpene-containing film-forming resin and a positive 248 nm photoresist thereof are characterized in that: the film-forming resin is a copolymer prepared by copolymerization of comonomers in a solvent in the presence of a radical initiator, and the comonomers mainly comprise 5-40 parts by weight of substituted styrene and 10-60 parts by weight of a sesquiterpene-containing constitutional unit; and the positive 248 nm photoresist mainly consists of 10-35 parts by weight of the film-forming resin, 0.5-6 parts by weight of a photoinduced acid, 70-90 parts by weight of a solvent and 0.01-0.5 part by weight of an organic base. The film-forming resin of the invention is a new modified film-forming resin prepared by introducing a polymerisable monomer containing a natural product sesquiterpene to a conventional poly(p-hydroxystyrene)-based film-forming resin. The new film-forming resin is capable of increasing transparency of the photoresist at exposure wavelength of 248 nm, improving photosensitivity of the photoresist, increasing adhesive property between HMDS-treated silicon chips, having no influence on photo-etched pattern and no damage to expensive lens of an exposure machine, improving heat resistance of the photoresist and substantially improving anti-etching performance of the photoresist.

An image reversal method is described that removes the etch resistance requirement from a resist. A high resolution resist pattern comprised of islands, lines, or trenches is formed with a large process window by exposing through one or more masks including phase edge masks and optionally with resolution enhancement techniques. A complementary material replacement (CMR) layer comprised of an organic polymer or material such as fluorosilicate glass which has a lower etch rate than the resist is coated over the resist pattern. CMR and resist layers are etched simultaneously to provide an image reversed pattern in the CMR layer which is etch transferred into a substrate. The method avoids edge roughness like bird's beak defects in the etched pattern and is useful for applications including forming contact holes in dielectric layers, forming polysilicon gates, and forming trenches in a damascene process. It is also valuable for direct write methods where an image reversal scheme is desired.

The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):A-Bn  (1)where A is a fused aromatic ring and B has a structure (2),where R1 is C1-C4alkyl and R2 is C1-C4alkylThe invention further relates to a process for forming an image using the composition.

Provided are: a resin having a novel fluorene structure which has a relatively high carbon concentration in the resin, relatively high heat resistance and relatively high solubility in solvents and which is applicable to a wet process; a method for producing the resin having a novel fluorene structure; an underlayer film-forming material which is useful for forming, as an underlayer film for multilayer resists, a novel resist underlayer film that has excellent heat resistance and excellent etching resistance; a pattern forming method which uses the material; and the like. A resin of the present invention has a structure represented by general formula (1). (In general formula (1), each of R3 and R4 independently represents a benzene ring or a naphthalene ring; the carbon atom in the bridgehead position of a fluorene skeleton or a (di)benzofluorene skeleton is bonded with a carbon atom in another aromatic ring; and a carbon atom in an aromatic ring of the fluorene skeleton or the (di)benzofluorene skeleton is bonded with the carbon atom in the bridgehead position of another fluorene skeleton or another (di)benzofluorene skeleton.)

When forming high-k metal gate electrode structures in an early manufacturing stage, integrity of an encapsulation and, thus, integrity of sensitive gate materials may be improved by reducing the surface topography of the isolation regions. To this end, a dielectric cap layer of superior etch resistivity is provided in combination with the conventional silicon dioxide material.

There is provided a novel polyester compound having in its main polymer chain an aliphatic cyclic structure with carboxylic acids or carboxylic acid ester groups as represented by the chemical formula (1), a resist material containing the polyester compound and a patterning method using the resist material.

The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at leastone opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layersas a mask. The method creats a resist pattern with an overall enhanced etch resistance that can be used to create fine granularity features needed for sub-micron semiconductor devices. The use of these materials results in a patterned resist layer less prone to top loss, round corners, and resist pattern degradation.

The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):A-B—C  (1)where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)where R1 is C1-C4alkyl and R2 is C1-C4alkyl.The invention further relates to a process for forming an image using the composition.

The invention discloses bio-based film-forming resin and photoresist prepared by the same. The bio-based film-forming resin is prepared by styrene derivatives and cholic acid derivatives through freeradical polymerization reaction and alcoholysis reaction. The bio-based film-forming resin is mixed with a photo-acid generator, auxiliaries, a solvent and the like to prepare the 365nm and 248nm photoresist. The bio-based film-forming resin has the advantages that polymerizable monomers containing natural product cholic acid are introduced into conventional poly(p-hydroxystyrene) film-forming resin to form the new improved film-forming resin, the new film-forming resin can increase the ultraviolet transparency of the photoresist and increase the photosensitivity of the photoresist, and the large cyclic structure of the film-forming resin can increase carbon compactness, reduce the free volume of polymerization chains, increase heat resistance and increase the etching resistance of the film-forming resin; large lateral chains can improve the problem of acid diffusion, increase dissolution difference and lower image edge roughness.

The invention discloses a method for preparing a novel micron and nano composite structure patterned sapphire substrate. The method specifically includes the following steps that: a) a conical micron patterned sapphire substrate with high curvature and high depth-to-width is prepared through photoetching and etching process; b) a metal nickel layer is formed on the micron patterned sapphire substrate through evaporation, film coating and deposition; c) the sapphire substrate coated with the metal nickel layer is subjected to annealing, so that a micron patterned sapphire substrate with nickel nanoparticles can be obtained; d) with the nickel nanoparticles adopted as a mask, the sapphire substrate is subjected to ICP etching, so that a plurality of nano sapphire column arrays can be formed on the conical patterned sapphire substrate; e) and residual nickel nanoparticles are removed, so that a patterned sapphire substrate with a micron and nano composite structure can be formed. The method for preparing the micron and nano composite structure has the advantages of convenience, quickness and low cost. With the method adopted, and a large-area nano pattern can be prepared on a micron pattern with high depth-to-width ratio and high curvature quickly.

The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):[-A-B-C-]  (1)where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)where R1 is C1-C4alkyl and R2 is C1-C4alkyl.The invention further relates to a process for forming an image using the composition.

The invention discloses a method for preparing a superconductive nanometer device by a negative electron beam resist exposure process. The method mainly comprises the following steps of: spinning a hydrogen silsesquioxane (HSQ) resist on a superconductive thin film; pre-drying; designing an exposure graph; exposing by two steps; developing; fixing; and etching. By using the method, the superconductive nanometer device which is stable in performance and uniform in line width and has the minimum line width of 15 nm can be prepared. Residues do not exist in an electrode region after the etching step is performed by setting an exposure amount in different regions and changing the thickness of an exposure product in the corresponding region, so that electrical measurement is facilitated. HSQ has high anti-etching performance and is suitable to serve as an etching mask of a hard superconductive metal material, so that the etching selection ratio can be increased. An electrode and the device are obtained through one-time etching; no contact potential difference exists between the electrode and the device; and the success rate of the device is high. Furthermore, a plurality of independent micro electric bridges are exposed on the same thin film, so that the efficiency of integrating and measuring the electric bridges can be improved, and the material utilization rate is increased; and the superconductive nanometer device has great significance for research on nanometer structures made of rare materials.

The invention provides a semi-conductor device with self-aligning contact holes and a manufacture method of the semi-conductor device. The semi-conductor device comprises a semiconductor substrate, at least two metal grids, etched barrier layers and dielectric layers, wherein the etched barrier layers are formed on the surfaces of the metal grids; each etched barrier layer comprises a first etched barrier layer and a second etched barrier layer; the dielectric layers are formed on the etched barrier layers; each dielectric layer comprises a first dielectric layer and a second dielectric layer. As the upper surfaces of the metal grids are lower than those of the first etched barrier layers, the metal grids and the first etch barrier layers are different in height; the second etched barrier layers are arranged in first grooves formed between the upper surfaces of the metal grids and the upper surfaces, relative to the metal grids, of the first etched barrier layers, so as to improve the anti-etch capability of the upper parts of the metal grids. The phenomenon of the short circuit communication between the self-aligning contact holes and the metal grids caused when the metal grids are exposed during the forming of the self-aligning contact holes is eliminated.

The invention discloses a method for manufacturing silicon nano structure, which relates to the technical field of semiconductor micro-nano processing in nano electron technology. The method comprises the following steps of: manufacturing a board pattern required by electron beam exposure; cleaning and drying a substrate which needs manufacturing the silicone nano structure; thermally oxidizing the substrate to produce a silicon dioxide masking layer; evenly coating the substrate with an electron beam exposure adhesive; exposing the pattern using electron beams as required dosage; developing and fixing; using electro beams for secondary exposure; carrying out dry etching on silicon dioxide; and carrying out dry etching on silicone to form the silicone nano structure. The method can manufacture the silicone nano structure smaller than 100 nm by using electron beam exposure and the dry etching technology; moreover, the silicone nano structure has regular shape, smooth edges and compact arrangement, and the finest part of the silicone nano structure can reach 30 nm.

The present invention relates to a novel absorbing antireflective coating composition comprising a novel crosslinkable polymer comprising at least one repeat unit (A) having structure (1), at least repeat (B) unit having a structure (2), and at least one repeat unit (C) having structure (3)where D is a direct valence bound or C(R1)(R2) methylene moiety where R1 and R2 are independently H, C1-C8 alkyl, C3-C24 cycloalkyl or C6-C24 aryl; Ari, Arii, Ariii and Ariv are independently phenylenic and naphthalenic moiety, R3 and R4 are independently hydrogen or C1-C8 alkyl; and R5 and R6 are independently hydrogen or C1-C8 alkyl; and a solvent. The invention also relates to a process for forming an image using the novel antireflective coating composition.

An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N2 gas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and N2 gas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.

The invention provides a photosensitive imaging combination which is characterized in that the combination comprises a photosensitive resin, a photoinitiator, a diluent, a thermal curing agent, filler and additives; wherein, the weight percentages of the combination components are as follows: 20 to 80 percent of photosensitive resin, 0.5 to 15 percent of photoinitiator, 5 to 40 percent of diluent, 0.2 to 15 percent of thermal curing agent and 3 to 40 percent of filler. A film made of the combination is provided with better heat resistance, anti-corrosion capability and fitting capability. When the combination is applied to the inner-layer circuit preparation of multi-layer printed circuit boards, the boards with etched circuits can be directly laminated without removing anti-corrosion inks, thus directly avoiding the film-removing process and the copper face coarsening process (brownification or melanization).

In order to overcome the defects of the traditional liquid photoimagable etching and plating resist ink during use, the invention provides novel etching and plating resist ink of a hydrophobic printed circuit board. The ink can realize mutual benefits of social benefits and economic benefits on the aspects of environment protection, labor protection, water resource and electric energy saving, improved manufacture efficiency and reduced cost of the printed circuit board, and the like without using an organic solvent, is a novel environmental-friendly, economic and energy-saving product according with the 3E (Efficacy, Efficiency and effectiveness) idea, and can replace the traditional generally used liquid photoimagable etching and plating resist ink to be applied under the condition of no change of equipment and conditions of the process and the manufacture procedure of the traditional printed circuit board.

A semiconductor device includes drain and source regions positioned in an active region of a transistor and a channel region positioned laterally between the drain and source regions that includes a semiconductor base material and a threshold voltage adjusting semiconductor material positioned on the semiconductor base material. A gate electrode structure is positioned on the threshold voltage adjusting semiconductor material, and a strain-inducing semiconductor alloy including a first semiconductor material and a second semiconductor material positioned above the first semiconductor material is embedded in the semiconductor base material of the active region. A crystalline buffer layer of a third semiconductor material surrounds the embedded strain-inducing semiconductor alloy, wherein an upper portion of the crystalline buffer layer laterally confines the channel region including the sidewalls of the threshold voltage adjusting semiconductor material and is positioned between the second semiconductor material and the threshold voltage adjusting semiconductor material.

The invention discloses a phenolic positive photoresist with etching resistance. The phenolic positive photoresist comprises the following main components: phenolic resin, a photosensitive compound and a solvent. The phenolic positive photoresist is characterized by also containing 0.5-30wt% of metal compound capable of being dissolved into the solvent. According to the photoresist disclosed by the invention, in a dry etching process after photoetching, physical bombardment and chemical reaction double etching is carried out on adhesive film patterns by plasma, volatile reactants formed by carbon and oxygen components in an adhesive layer are removed while the metal components are slowly deposited, and a new metal protection layer is formed on the surface of an adhesive film, thereby achieving the target of improving the etching resistance of the photoresist. The photoresist disclosed by the invention can be widely used for the field of production of microelectronic components requiring dry etching.

The invention belongs to the field of photoetching, and particularly relates to a slushing compound lower-layer membrane monomer and composition as well as a patterning method. The slushing compound lower-layer membrane composition contains a slushing compound lower-layer membrane monomer shown in the formula (I), an aromatic polymer and a solvent, in the formula (I), Ar2 represents arylidene withthe carbon atomic number being 6-30, and R1 and R2 independently represent alkyl with the carbon atomic number being 1-6 or aryl with the carbon atomic number being 6-30. The slushing compound lower-layer membrane composition provided by the invention has the outstanding corrosion resistance, heat resistance, solvent solubility, gap filling feature and planarization feature. In addition, the slushing compound lower-layer membrane composition provided by the invention can have self cross-linking reaction through heating under the condition that no solidifying reaction additive is adopted, andgenerates no gas in the solidifying process, and accordingly can effectively prevent pollution problem of the slushing compound lower-layer membrane and equipment.