Semi-conductor device with self-aligning contact holes and manufacture method of semi-conductor device

Abstract

The invention provides a semi-conductor device with self-aligning contact holes and a manufacture method of the semi-conductor device. The semi-conductor device comprises a semiconductor substrate, at least two metal grids, etched barrier layers and dielectric layers, wherein the etched barrier layers are formed on the surfaces of the metal grids; each etched barrier layer comprises a first etched barrier layer and a second etched barrier layer; the dielectric layers are formed on the etched barrier layers; each dielectric layer comprises a first dielectric layer and a second dielectric layer. As the upper surfaces of the metal grids are lower than those of the first etched barrier layers, the metal grids and the first etch barrier layers are different in height; the second etched barrier layers are arranged in first grooves formed between the upper surfaces of the metal grids and the upper surfaces, relative to the metal grids, of the first etched barrier layers, so as to improve the anti-etch capability of the upper parts of the metal grids. The phenomenon of the short circuit communication between the self-aligning contact holes and the metal grids caused when the metal grids are exposed during the forming of the self-aligning contact holes is eliminated.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a semiconductor device with a self-aligned contact hole and a preparation method thereof. Background technique [0002] With the decreasing size of semiconductor devices, more and more device units are integrated per unit area, the density of devices is gradually increasing, and the size of devices is continuously decreasing, which also increases the difficulty of manufacturing. In the face of the problems in the manufacture of semiconductor devices, researchers have made a lot of improvements, such as: [0003] At present, the commonly used gate forming process is the front-gate process. The so-called front-gate process refers to first depositing a gate dielectric layer, forming a gate on the gate dielectric layer, and then performing source and drain implantation, and then performing an annealing process to activate the source. The ions in the drain form the source and drain regi...

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Problems solved by technology

[0010] How to combine the "gate-last process" and "self-aligned contact hole preparation process" to produce miniaturized and miniaturized semiconductor devices, the industry has not yet proposed an effective method

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