Method for manufacturing silicon nano structure
A technology of silicon nano and silicon dioxide, which is applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of poor etch resistance, inability to mask, weaken PMMA's etch resistance, and achieve etch resistance Enhanced, tightly packed, smooth-edged effects
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[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0038] The present invention utilizes PMMA positive electron beam glue to become negative electron beam glue when the incident electron beam dose is high enough and secondary electron beam irradiation to enhance the characteristics of PMMA etching resistance, so that the PMMA glue that plays a masking effect on the pattern resists The etching performance is greatly enhanced, and the preparation of silicon nanostructures is completed after dry etching.
[0039] Such as figure 1 as shown, figure 1 It is a flow chart of a method for preparing a silicon nanostructure provided by the present invention, the method comprising:
[0040] Step 1: making the layout required for electron beam exposure;
[0041] Step 2: Cleaning an...
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