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Method for manufacturing silicon nano structure

A technology of silicon nano and silicon dioxide, which is applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of poor etch resistance, inability to mask, weaken PMMA's etch resistance, and achieve etch resistance Enhanced, tightly packed, smooth-edged effects

Inactive Publication Date: 2010-06-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

However, PMMA has a big defect that its anti-etching performance is poor. When making nanostructures with a size below 100nm, it is necessary to evenly coat a thinner PMMA glue due to the fine pattern, which weakens the anti-etching performance of PMMA even more. Etching performance, the effect of masking cannot be completed in dry etching

Method used

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  • Method for manufacturing silicon nano structure
  • Method for manufacturing silicon nano structure
  • Method for manufacturing silicon nano structure

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0038] The present invention utilizes PMMA positive electron beam glue to become negative electron beam glue when the incident electron beam dose is high enough and secondary electron beam irradiation to enhance the characteristics of PMMA etching resistance, so that the PMMA glue that plays a masking effect on the pattern resists The etching performance is greatly enhanced, and the preparation of silicon nanostructures is completed after dry etching.

[0039] Such as figure 1 as shown, figure 1 It is a flow chart of a method for preparing a silicon nanostructure provided by the present invention, the method comprising:

[0040] Step 1: making the layout required for electron beam exposure;

[0041] Step 2: Cleaning an...

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Abstract

The invention discloses a method for manufacturing silicon nano structure, which relates to the technical field of semiconductor micro-nano processing in nano electron technology. The method comprises the following steps of: manufacturing a board pattern required by electron beam exposure; cleaning and drying a substrate which needs manufacturing the silicone nano structure; thermally oxidizing the substrate to produce a silicon dioxide masking layer; evenly coating the substrate with an electron beam exposure adhesive; exposing the pattern using electron beams as required dosage; developing and fixing; using electro beams for secondary exposure; carrying out dry etching on silicon dioxide; and carrying out dry etching on silicone to form the silicone nano structure. The method can manufacture the silicone nano structure smaller than 100 nm by using electron beam exposure and the dry etching technology; moreover, the silicone nano structure has regular shape, smooth edges and compact arrangement, and the finest part of the silicone nano structure can reach 30 nm.

Description

technical field [0001] The present invention relates to the technical field of semiconductor micro-nano processing in nanoelectronics technology, in particular to a manufacturing process that combines electron beam exposure and dry etching to produce regular-shaped, smooth-edge, tightly-arranged, and finest parts below 100 nm. A method for silicon nanostructures up to 30nm. Background technique [0002] Nanofabrication technology is the most important basic technology in nanotechnology. The main research content of nanofabrication technology is to prepare and process nanostructures with characteristic sizes in the range of 0.1-100nm, in order to obtain certain nano-effects. Since the traditional processing methods are difficult to meet the processing requirements of the characteristic size range of 0.1-100nm, it is necessary to use equipment and methods that meet the new requirements to process nanostructures. [0003] Among them, electron beam exposure technology is a hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 张仁平张杨杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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