Sesquiterpene-containing film-forming resin and positive 248 nm photoresist thereof

Abstract

A sesquiterpene-containing film-forming resin and a positive 248 nm photoresist thereof are characterized in that: the film-forming resin is a copolymer prepared by copolymerization of comonomers in a solvent in the presence of a radical initiator, and the comonomers mainly comprise 5-40 parts by weight of substituted styrene and 10-60 parts by weight of a sesquiterpene-containing constitutional unit; and the positive 248 nm photoresist mainly consists of 10-35 parts by weight of the film-forming resin, 0.5-6 parts by weight of a photoinduced acid, 70-90 parts by weight of a solvent and 0.01-0.5 part by weight of an organic base. The film-forming resin of the invention is a new modified film-forming resin prepared by introducing a polymerisable monomer containing a natural product sesquiterpene to a conventional poly(p-hydroxystyrene)-based film-forming resin. The new film-forming resin is capable of increasing transparency of the photoresist at exposure wavelength of 248 nm, improving photosensitivity of the photoresist, increasing adhesive property between HMDS-treated silicon chips, having no influence on photo-etched pattern and no damage to expensive lens of an exposure machine, improving heat resistance of the photoresist and substantially improving anti-etching performance of the photoresist.

Description

technical field [0001] The invention relates to a film-forming resin and photoresist thereof, in particular to a film-forming resin containing a sesquiterpene copolymer and a film-forming resin prepared by using the film-forming resin for using KrF laser (wavelength 248nm) as A deep ultraviolet (DUV) positive chemically amplified photoresist composition exposed to a light source. Background technique [0002] Photoresist is a key functional material in the photolithography process in the large-scale integrated circuit industry. The film-forming resin contained in it is an important part of the photoresist. The chemical and physical properties of the film-forming resin directly affect the photoresist. Effects of use in the large-scale integrated circuit industry. The film-forming resin and its photoresist, which were developed in the 1980s with polyhydroxystyrene (PHS) as the main component, are widely used in the manufacture of large-scale integrated circuits. The photolit...

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Problems solved by technology

[0003] The present invention provides a film-forming resin containing natural product sesquiterpenes (Sesquiterpenes) and a deep ultraviolet (DUV) film for exposure light source with KrF laser (wavelength 248nm) prepared by using this film-forming resin Positive chemically amplified photoresist composition, the purpose of which is to effectively improve the adhesion performance of the existing polyhydroxystyrene (PHS)-based film-forming agent and photoresist to the substrate silicon wafer, and further improve the The heat resistance of the resist improves the etching resistance of the photoresist, thereby improving the photolithography process to obtain better graphics; at the same time, it solves the problem of the gas overflow of the existing photoresist during the photolithography process. Problems with lithographic patterns and damaging expensive exposure machine lenses

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