Lithography method

Abstract

The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at leastone opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layersas a mask. The method creats a resist pattern with an overall enhanced etch resistance that can be used to create fine granularity features needed for sub-micron semiconductor devices. The use of these materials results in a patterned resist layer less prone to top loss, round corners, and resist pattern degradation.

Description

Technical field [0001] The present invention relates to a photolithography method of semiconductor technology, in particular to a photolithography method of double patterning. Background technique [0002] Semiconductor technology continues to develop to smaller pattern sizes, 65 nanometers, 45 nanometers or less. The patterned photoresist layer used to manufacture such a small pattern size usually has a high aspect ratio. Due to many factors, it is difficult to maintain the desired critical dimension (CD). For example, because the resist layer material is easily affected by the etching process, pattern collapse and critical dimension reduction may occur in the photolithography patterning process. When double patterning technology is used, new problems may arise, such as rounded corners, resist pattern collapse, etching resistance, poor shape, wrong exposure focus, high process cost, and low throughput. Summary of the invention [0003] In order to solve the above-mentioned pro...

AI Technical Summary

Problems solved by technology

Due to many factors, it is difficult to maintain the desired critical dimension (CD)

For example, pattern collapse and critical dimension reduction may occur during photolithographic patterning because the resist layer material is susceptible to the etch process

When double patterning is used, new problems may arise such as rounded corners, resist pattern collapse, etch resistance, poor shape, exposure focus errors, high process cost, and low throughput

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