44 results about "Helium atom" patented technology

The invention relates to a method and apparatus for the fragmentation of large molecules, especially biopolymers. The invention consists in reacting analyte ions with excited or radical neutral particles, whereby, at least in the case of bombardment of analyte ions with helium atoms from an FAB generator, a new type of fragmentation occurs which strongly resembles fragmentation by electron capture (ECD). The reactions may be performed in magnetic ion traps (ion cyclotron resonance cells, ICR), in RF ion traps according to Wolfgang Paul, in RF ion guides, or in free beams of analyte ions or neutral particles.

The invention relates to a method and apparatus for the fragmentation of large molecules, especially biopolymers. The invention consists in reacting analyte ions with excited or radical neutral particles, whereby, at least in the case of bombardment of analyte ions with helium atoms from an FAB generator, a new type of fragmentation occurs which strongly resembles fragmentation by electron capture (ECD). The reactions may be performed in magnetic ion traps (ion cyclotron resonance cells, ICR), in RF ion traps according to Wolfgang Paul, in RF ion guides, or in free beams of analyte ions or neutral particles.

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.

The invention discloses a polycarboxylate superplasticizer composition which is prepared from a polycarboxylate superplasticizer and an adsorption shielding agent. The adsorption shielding agent has the chemical structural formula shown as (1), wherein the value of a ranges from 0 to 100; the value of b ranges from 200 to 3000; the value of c ranges from 2 to 10; R1 represents methyl or hydrogen atoms; R2 represents methyl, hydrogen atoms, helium atoms or bromine atoms; R3 represents methyl, hydrogen atoms, helium atoms, bromine atoms or hydroxy; R4 represents methyl or hydrogen atoms. The polycarboxylate superplasticizer composition has the good clay-resisting performance, and can be used for decreasing the sensibility of concrete or mortar to gravel raw materials with high mud content.

The present invention discloses a selectively passing material and a preparation method thereof, belonging to the technical field of materials. The selectively passing material is provided with a channel used for passing of helium, the channel is formed by a release process of helium which is generated by neutron irradiation for the material. The preparation method of the selectively passing material comprises the steps of: mixing powdery metal with powdery <10>B elementary substance / compound; sintering the mixture to obtain a matrix; then performing neutron irradiation processing on the obtained matrix; and finally performing heating processing on the matrix which is subjected to the neutron irradiation processing to release the helium generated by the neutron irradiation to form the selectively passing material. According to the selectively passing material and the preparation method of the present invention, the problem of preparing a <238>Pu helium-passing plutonium-blocking material is solved, and the characteristic that <10>B reacts with neutron to generate helium is ingeniously utilized to form a specific channel for diffusion of helium atoms, excellent selectively passing performance is achieved, in addition, the condition of each step of the preparation process can be easily controlled, thereby avoiding the disadvantages of low yield and unstable quality of foreign technology, and the selectively passing material also can be used as a helium-passing window material for being popularized and applied to alpha decay isotopes besides the <238>Pu.

Laser light generated from laser light generating means (10) is fed through laser light transfer means (11) including a demagnification optical system (23) so as to be condensed in a part Ex where an object gas of analysis exists. The laser light is imparted with energy for causing a multiple photon excitation phenomenon or a multiple photon ionization phenomenon of gas in the condensed part Ex. The energy of the laser light is large enough for 17 eV or higher energy to be injected into a hydrogen molecule when the object gas of analysis is hydrogen and for 23 eV or higher energy to be injected into a helium atom when the object gas of analysis is helium. For example, the intensity of the laser light in the condensed part Ex is 1014 W / cm2 or higher. This provides a laser analytical instrument capable of observing various types of gas through an inexpensive and simple arrangement.

The invention discloses phenoxylmethyl siloxane shown as the formula (I) and a preparation method of phenoxylmethyl siloxane. The preparation method of the compound comprises the following steps of: taking raw materials according to the mole ratio of helium atoms in high-boiling-point chlorosilane waste liquid to phenol being 1: (1-1.5); adding phenol into a reactor, and dropwise adding the high-boiling-point chlorosilane waste liquid into the reactor at the temperature of 40 DEG C; after the dropwise adding operation is ended, heating to 60-100 DEG C, and reacting for 8-13h until no HCl is discharged; and carrying out reduced pressure distillation on the reacted materials, removing byproducts distilled at the temperature lower than 170 DEG C and incompletely-reacted phenol, and then, collecting a fraction, i.e., phenoxylmethyl siloxane as a product distilled at the temperature of 230-260 DEG C. The high-boiling-point chlorosilane waste liquid as an industrial waste is used as the raw material, and obtained phenoxylmethyl siloxane has good thermal stability, oxidation resistance and a high flash point and is suitable for hydraulic oil, diffusion pump oil and conduction oil. The formula of phenoxylmethyl siloxane is shown as (RO)nSi-Si(CH3)6-n (I).