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Preparation method of helium-containing W-based nanocrystalline film material

A technology of thin film materials and nanocrystals, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as radio frequency magnetron sputtering that have not been seen, and meet the needs of large-scale sample research. The effect of the simple and easy operation of the preparation process

Inactive Publication Date: 2018-11-30
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no use of RF magnetron sputtering in the preparation of W-based thin film materials in the literature.

Method used

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  • Preparation method of helium-containing W-based nanocrystalline film material
  • Preparation method of helium-containing W-based nanocrystalline film material
  • Preparation method of helium-containing W-based nanocrystalline film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] This embodiment provides a preparation method of helium-containing W-based nanocrystalline film material, such as figure 1 shown, including the following steps:

[0028] Step 1: Perform surface treatment on the W target (the thickness of the W target is 2mm), remove surface metal oxides and impurities, and obtain the metal W target to be sputtered;

[0029] Step 2: Ultrasonic cleaning the single crystal Si substrate with a mixed solution of alcohol and acetone, finally rinsing with deionized water, and drying;

[0030] Step 3: Install the W target of step 1 on the permanent magnet target of magnetron sputtering, place the substrate of step 2 on the substrate inside the magnetron sputtering apparatus, and evacuate to 8×10 -5 Pa, into a He / Ar mixed atmosphere for sputtering deposition for 5 hours, wherein the total pressure of the He / Ar mixed gas is 2 Pa, and the He / Ar pressure ratio is 5; the deposition temperature of the single crystal Si substrate is normal temperatur...

Embodiment 2

[0039] This embodiment provides a method for preparing a helium-containing W-based nanocrystalline thin film material. Compared with Example 1, the process parameters in Step 2 and Step 3 are the same, except that the W-based target used in Step 1 is W Alloy target (oxide dispersed W or carbide dispersed W).

[0040]The helium-containing W-based nanocrystalline thin film material obtained by the method described in this embodiment was tested according to the method described in Example 1, and the results showed that:

[0041] The grain size of helium-containing W-based nanocrystalline thin film material is about 100nm, which is in line with the size range of nanocrystalline materials;

[0042] The crystal structure of the helium-containing W nanocrystalline film material is a typical nano-columnar crystal, and the film thickness is in the range of 10nm-100μm.

[0043] The distribution of helium bubbles in the helium-containing W nanocrystalline thin film material is uniform, ...

Embodiment 3

[0045] This embodiment provides a method for preparing a helium-containing W-based nanocrystalline thin film material. Compared with Embodiment 1, the process parameters in Step 1 and Step 3 are the same, and the difference is that the substrate in Step 2 is a ceramic substrate. .

[0046] The helium-containing W-based nanocrystalline thin film material obtained by the method described in this embodiment was tested according to the method described in Example 1, and the results showed that:

[0047] The grain size of helium-containing W-based nanocrystalline thin film material is about 100nm, which is in line with the size range of nanocrystalline materials;

[0048] The crystal structure of the helium-containing W nanocrystalline film material is a typical nano-columnar crystal, and the film thickness is in the range of 10nm-100μm.

[0049] The distribution of helium bubbles in the helium-containing W nanocrystalline thin film material is uniform, and the average size of the...

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Abstract

The invention discloses a preparation method of a helium-containing W-based nanocrystalline film material, for the first time, a W-based target material is sputtered and deposited in a He / Ar mixed atmosphere by a magnetron sputtering method for realizing preparation of the helium-containing W-based nanocrystalline film material on a substrate. The preparation method can effectively overcome the problem of coarse grains of W-based bulks prepared by traditional powder metallurgy and other methods, realizes the preparation of W-based samples with nano-scale crystal grain size, effectively overcomes the problems of uncontrollable temperature caused by temperature increase of the surface of the material and uneven distribution of helium atoms on the surface of the material in the depth direction when helium is injected by an accelerator in the traditional methods, and can realize uniform and controllable injection of the helium atoms into the W-based material.

Description

technical field [0001] The invention relates to a preparation method of a helium-containing metal-based nanocrystal thin film material, especially a preparation method of a helium-containing W-based nanocrystal thin film material. Background technique [0002] Nuclear energy is considered to be an ideal energy source that can replace fossil energy on a large scale, meet people's growing electricity demand, and improve the energy consumption structure. Nuclear fusion energy mainly uses hydrogen isotopes deuterium and tritium to polymerize under special conditions to release high-energy particles (neutrons and helium) to obtain energy, namely 2 D+ 3 TÒ 4 He (3.5 MeV)+n 0 (14.1 MeV). The materials in the fusion reactor, especially the first wall facing the plasma and the material of the diverter, in addition to being irradiated by high-energy neutrons to cause serious damage to the lattice atoms, the concentration produced during the fusion reaction can reach 10 Helium at ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/16C23C14/18
CPCC23C14/165C23C14/185C23C14/35
Inventor 王乐王先平郝汀高云霞方前锋
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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