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A preparation method based on helium-containing w-based nanocrystalline thin film material

A technology of thin film materials and nanocrystals, which is applied in metal material coating process, vacuum evaporation coating, coating, etc., can solve the problems of radio frequency magnetron sputtering that have not been seen, and meet the needs of large-scale sample research. The effect of simple and easy-to-operate preparation process

Inactive Publication Date: 2020-07-17
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no use of RF magnetron sputtering in the preparation of W-based thin film materials in the literature.

Method used

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  • A preparation method based on helium-containing w-based nanocrystalline thin film material
  • A preparation method based on helium-containing w-based nanocrystalline thin film material
  • A preparation method based on helium-containing w-based nanocrystalline thin film material

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Experimental program
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Effect test

Embodiment 1

[0027] This embodiment provides a method for preparing a helium-containing W-based nanocrystalline thin film material, such as figure 1 As shown, including the following steps:

[0028] Step 1: Perform surface treatment on the W target (the thickness of the W target is 2mm), remove the surface metal oxide and impurities, and obtain the metal W target to be sputtered;

[0029] Step 2: The single crystal Si substrate is ultrasonically cleaned with a mixed solution of alcohol and acetone, and finally rinsed with deionized water and dried;

[0030] Step 3: Mount the W target of step 1 on the permanent magnet target of magnetron sputtering, put the substrate of step 2 on the substrate in the magnetron sputtering apparatus, vacuum to 8×10-5Pa, and pass in He / Ar mixed atmosphere was sputtered and deposited for 5h, where the total pressure of He / Ar mixed gas was 2Pa, the He / Ar pressure ratio was 5; the deposition temperature of single crystal Si substrate was normal temperature -600℃, and th...

Embodiment 2

[0036] This embodiment provides a method for preparing helium-containing W-based nanocrystalline thin film material. Compared with Example 1, the process parameters of step 2 and step 3 are the same. The difference is that the W-based target material used in step 1 is W Alloy target (oxide dispersion W or carbide dispersion W).

[0037] The helium-containing W-based nanocrystalline thin film material obtained by the method described in this embodiment was tested according to the method described in Example 1, and the results showed that:

[0038] The grain size of the helium-containing W-based nanocrystalline thin film material is about 100nm, which is in line with the size range of nanocrystalline materials;

[0039] The crystal structure of the helium-containing W nanocrystalline thin film material is a typical nano columnar crystal, and the thickness of the thin film is in the range of 10nm-100μm.

[0040] The distribution of helium bubbles in the helium-containing W nanocrystallin...

Embodiment 3

[0042] This embodiment provides a method for preparing a helium-containing W-based nanocrystalline thin film material. Compared with embodiment 1, the process parameters of step 1 and step 3 are the same, but the difference is that the substrate in step 2 is a ceramic substrate .

[0043] The helium-containing W-based nanocrystalline thin film material obtained by the method described in this embodiment was tested according to the method described in Example 1, and the results showed that:

[0044] The grain size of the helium-containing W-based nanocrystalline thin film material is about 100nm, which is in line with the size range of nanocrystalline materials;

[0045] The crystal structure of the helium-containing W nanocrystalline thin film material is a typical nano columnar crystal, and the thickness of the thin film is in the range of 10nm-100μm.

[0046] The distribution of helium bubbles in the helium-containing W nanocrystalline thin film material is uniform, and the average ...

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Abstract

The invention discloses a method for preparing a helium-containing W-based nanocrystalline thin film material, that is, for the first time, the magnetron sputtering method is used to sputter and deposit a W-based target material in a He / Ar mixed atmosphere, so that the W-based target material is deposited on the substrate Realize the preparation of helium-containing W-based nanocrystalline thin film materials. This preparation method can effectively overcome the problem of coarse grains of W-based bulks prepared by traditional powder metallurgy and other methods, realize the preparation of W-based samples with nanometer grain size, and effectively overcome the problem of using accelerators to inject He in traditional methods. Due to the uncontrollable temperature caused by the increase of the surface temperature of the material and the uneven distribution of helium atoms in the depth direction of the material surface, the uniform and controllable injection of He atoms into the W-based material has been realized.

Description

Technical field [0001] The invention relates to a method for preparing helium-containing metal-based nanocrystalline film material, in particular to a method for preparing helium-containing W-based nanocrystalline film material. Background technique [0002] Nuclear energy is considered to be an ideal energy source that can replace fossil energy on a large scale, meet people's growing power demand, and improve energy consumption structure. Nuclear fusion energy mainly uses hydrogen isotopes deuterium and tritium to polymerize under special conditions to release high-energy particles (neutrons and helium) to obtain energy, namely 2D + 3TÒ 4He (3.5 MeV) + n0 (14 .1 MeV). The materials in the fusion reactor, especially the first wall facing the plasma and the material of the divertor, in addition to the high-energy neutron radiation that causes severe damage to the dislocation of lattice atoms, the concentration generated during the fusion reaction reaches 10 The helium of ~15 app...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/18
CPCC23C14/165C23C14/185C23C14/35
Inventor 王乐王先平郝汀高云霞方前锋
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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