67results about How to "Small contact resistance" patented technology

The present invention solves the problem of conventional group-III nitride semiconductor LED in that, since the LED driving current is supplied only from a pad electrode serving also as an ohmic electrode, the driving current cannot diffuse over a wide range of the light-emitting region and a group-III nitride semiconductor LED having high light emission intensity cannot be successfully provided. A group-III nitride semiconductor LED having high light emission intensity, which is fabricated using a stacked layer structure obtained by providing a surface ohmic electrode, a window layer including an electrically conducting transparent oxide crystal layer and a pad electrode on an electrically conducting substrate through a boron phosphide (BP)-based buffer layer to allow the driving current to diffuse over a wide range of the light-emitting region is provided.

A fuel cell includes a separator (10B) interposed between adjacent unit cells (10A). A mixed fluid of air and water is supplied to an air electrode (12) of each unit cell. The separator includes a mesh conductor (14) on at least a surface facing the air electrode of the unit cells, and the mixed fluid passes through the mesh conductor. Water is retained on the mesh portion of the conductor. With this configuration, it is possible for the unit cell to be cooled by the release of latent heat when the water is evaporated by the heat of unit cell, without any clogging which inhibits contact between the electrode and the air.

An object is to improve characteristics of a power storage device. The present invention relates to an electricity storage device comprising a current collector and a negative electrode-active material layer formed over the current collector. The negative electrode-active material layer includes a negative electrode comprising a first negative electrode layer in contact with the current collector; a second negative electrode layer in contact with the first negative electrode layer, having a smaller capacitance than the first negative electrode layer and containing one material selected from a nitride of lithium and a transition metal represented by LiaMbNz (M is a transition metal, 0.1≦a≦2.8, 0.2≦b≦1 and 0.6≦z≦1.4), a silicon material, and lithium titanate; a positive electrode that is paired with the negative electrode; and a solid electrolyte interposed between the positive electrode and the negative electrode.

To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

In order to propose a dry process technique of producing a printing roll having safe and beauty concave portions for printing image area without discharging environmental contaminating substance and a new technique for improving quality of printed matters, this invention is to provide a printing roll with DLC film layer in which laser beam-engraved grooves as concave portions for printing image area are formed on a carbide cermet spray coating formed on a surface of a roll substrate, and a method wherein a carbide cermet spray coating is formed on a surface of a roll substrate roughened by a blast treatment, the surface of the carbide cermet spray coating is ground or ground-polished, then a DLC film is formed on the ground or ground-polished surface and thereafter laser beam-engraved grooves are formed on the surface of the DLC film as a concave portion for printing image area.

A solid electrolytic capacitor has a structure in which a dielectric layer and a metal layer are formed in this order on the surface of an anode. The anode is composed of a porous sinter of tantalum particles. The dielectric layer is composed of a dielectric oxide film formed by anodizing the surface of the anode in an aqueous solution consisting of phosphoric acid, for example. The metal layer is formed by preparing a silver paste by mixing silver particles having an average particle diameter of not larger than 0.05 μm, a protective colloid, and an organic solvent, and applying the silver paste on the surface of the dielectric layer, and drying the silver paste at a temperature of 150° C. or higher. Further, the anode is connected with an anode terminal, and the metal layer is connected with a cathode terminal through a conductive adhesive.

A solid electrolytic capacitor has a structure in which a dielectric layer, an electrolyte, a carbon layer, and a metal layer are formed in this order on the surface of an anode. The anode is composed of a porous sinter of tantalum particles. The dielectric layer is composed of a dielectric oxide film formed by anodizing the surface of the anode in an aqueous solution of phosphoric acid, for example. The electrolyte is composed of a conductive polymer, such as polypyrrole or polythiophene. The metal layer is formed by preparing a silver paste by mixing silver particles having an average particle diameter of not larger than 0.05 μm, a protective colloid, and an organic solvent, and applying the silver paste on the surface of the carbon layer, and drying the silver paste at approximately 150° C. or higher.

A gallium nitride-based compound semiconductor light-emitting device having an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed in this order on a substrate. Each layer includes a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.

Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and / or graphene on a top surface of the passivation film.

The invention discloses a two-way electrical conductivity detecting and monitoring method with symmetrical lead self-compensation and a detecting, based on a two-way electrical conductivity detecting and monitoring device with symmetrical lead self-compensation and a detecting. The device disclosed by the invention comprises a liquid crystal touch screen, a display window, an operation button, an indicating lamp, a mother board, a display panel and a power supply board, wherein the mother board is respectively and electrically connected with the display panel and the power supply board. When the device is in use, a precision internal electric conducting meter is established through an internal standard resistance array circuit; the current electric conducting voltage is measured by a measuring circuit; the electric conducting voltage is subjected to table-loop-up and interpolation through the internal electric conducting meter to obtain an electric conducting value; the electric conducting value is subjected to lead resistance compensation, temperature compensation, capacitance compensation and electrode constant correction to obtain a corresponding standard electric conductivity; and finally, the standard electric conductivity is subjected to table-look-up and interpolation according to a concentration electric conductivity meter to solve the concentration of a solution to be measured. The device and method have the advantages of high measuring precision, high work reliability, convenience in operation, high automatic degree, high intelligent degree, convenience in manufacture and convenience and low construction cost.

An electric power steering apparatus in which steering assistance is achieved by transmitting a rotary motion of an electric motor for steering assistance to a steering shaft on which a worm wheel is mounted through a worm shaft on which a worm is mounted, wherein the worm shaft is deflectable toward the worm wheel and equipped with a biasing member biasing the worm shaft in the deflective direction thereof, or alternatively, the worm wheel is deflectable toward the worm shaft and equipped with a biasing member biasing the worm wheel in the deflective direction thereof.

An NMR spectrometer (131) with an NMR magnet coil (91) having windings of a conductor with a superconducting structure (1), which have a plurality of band-segments (2, 2a, 7a-7e, 8a-8d, 15) made of band-shaped superconductor. Each band-segment (2, 2a, 7a-7e, 8a-8d, 15) has a flexible substrate (3) and a superconducting layer (4) deposited thereon, wherein the band-segments (2, 2a, 7a-7e, 8a-8d, 15) each have a length of 20 m or more. At least one of the band-segments (2, 2a, 7a-7e, 8a-8d, 15) forms a linked band-segment (2, 2a), and each linked band-segment (2, 2a) is connected to at least two further band-segments (7a-7e) in such a way that the combined further band-segments (7a-7e) overlap with at least 95% of the total length (L) of the linked band-segment (2, 2a). The magnet coil generates particularly high magnetic fields in a sample volume and has a low drift.

The invention discloses a self-compensated dual-circuit conductivity detection monitor with symmetrical leads, which comprises a display device and a built-in circuit board, wherein the display device comprises a liquid crystal touch screen, a display window, an operation button and an indication lamp; and the built-in circuit board comprises a mainboard, a display board and a power supply board, and the mainboard is respectively electrically connected with the display board and the power supply board. The self-compensated dual-circuit conductivity detection monitor is used for monitoring and controlling the conductivity in real time, and has the advantages of high measurement precision, reliability in use, complete interference resistance, convenience for operation, high automation degree, high intelligent degree, convenience for manufacture and maintenance, low cost and the like.

The invention provides an electrical energy storage module (100), comprising: at least one storage cell stack (10), comprising: a plurality of energy storage cells (1), which each have a cell housing (1a) each having two pole connections (1b,1c), wherein the energy storage cells (1) are arranged in series in the storage cell stack (10) in such a way that in each case a first pole connection (1b) and a second pole connection (1c) having different polarities of two adjacent energy storage cells (1) are galvanically connected to one another by means of flat cell connecting elements (4), wherein the cell housings (1a) of all of the energy storage cells (1) are galvanically connected to one another, wherein the first pole connection (1b) of an energy storage cell (1) arranged at a first end of the storage cell stack (10) is galvanically connected to the cell housing (1a), and wherein the second pole connection (1c) of an energy storage cell (1) arranged at a second end of the storage cell stack (10) and the cell housings (1a) each have a flat return conductor (5).

The invention is a heater element and electrode lead wires making method for a carbon fiber infrared electrothermal tube, its main character: soaking a carbon fiber beam in melamine formaldehyde, spirally winding on to a high-temperature resistant flexible fiber rope, thus making the heater element, successively winding metallic electrode lead wires closely at two ends of the heater element, placing the winded parts in a mould cavity and injecting conductive mixture in the module cavity to combine the mixture with the winded parts, demoulding and drying, then heating, and finally making the lead wires connected fast with the heater element. The heater element has excellent bending and deforming performance, applied to make special-shaped electrothermal tubes in various shapes and because the resistance of unit length of carbon fiber thread, can accurately reach design requirement for power. Because joint resistance of the heater element and each electrode lead wire is small, the service life of carbon fiber infrared electrothermal tubes is assured.

An anodizing device has: a power supply drum that supports, in close contact therewith, a web consisting of an anodizable metal and has a part configured with a conductive material, to which the web is closely attached; a counter electrode provided facing the power supply drum; an electrolysis tank filled with an electrolyte, into which part of the power supply drum and the counter electrode are immersed; a protection member formed of a non-conductive material that protects the lateral direction end portions of the web supported by the power supply drum in close contact therewith and a portion of the power supply drum, to which the web is not closely attached, from the electrolyte; and a driver adapted to make the web and the protection member travel concurrently in the electrolyte in synchronization with the circumferential speed of the power supply drum.

A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers.

In this solid electrolytic capacitor, a plate-shaped anode having a porous sintered body is formed covering one part of an anode lead. A dielectric layer is formed covering the anode. An electrolyte layer of tantalum carbide is formed covering the dielectric layer. A cathode is formed covering the electrolyte layer. A conductive adhesive layer is formed on the upper surface of the cathode, and the cathode and a cathode terminal are connected by the conductive adhesive layer. An anode terminal is connected by welding the anode terminal on the anode lead projecting from the anode. Further, a mold outer resin is formed around the second conductive layer, the cathode terminal and the anode terminal.

An adhesive layer 3 is disposed between a carbon particle 2 and a catalyst substance 1 of a catalyst-supporting particle for a fuel cell containing the carbon particle 2 and the catalyst substance 1. Thereby, the catalyst-supporting particle for fuel cell can be obtained in which a contact resistance between the catalyst substance and the carbon particle supporting the same is lower, and the aggregation of the catalyst substance is suppressed. A catalyst electrode for a fuel cell and the fuel cell using the above particle have a higher output power and an excellent durability.

There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers (2-8) to form a light emitting layer are laminated on a surface of a substrate (1) made of, for example, a sapphire (Al2O3 single crystal) or the like and a p-side electrode (10) is formed on the surface thereof thorough a light transmitting conductive layer (9). An n-side electrode (11) is formed on an exposed surface of an n-type layer (4), exposed by removing a part of the semiconductor layers (4-8) by etching. The n-side electrode includes actually an Al layer (11a) in contact with the n-type layer, a barrier metal layer (11b) and an Au layer (11c).

The present invention discloses an aluminum profile passivation process conductivity detection control device. The aluminum profile passivation process conductivity detection control device comprises a chassis, and a panel, a liquid crystal touch screen, a motherboard, a power supply and metering pump driver board, four switch power supply modules, a cable, an AC power supply filter, a power supply input / output socket, two conductivity electrode cable joints, two temperature cable joints, four metering pump driving outputting sockets, a grounding terminal and a CAN bus connection socket which are arranged in the chassis. The power supply and metering pump driver board is equipped with a shielding box, and the motherboard is equipped with a shielding galvanized iron board. A power supply switch button on the panel is connected with a button S14 on the power supply and metering pump driver board, a power supply indicating lamp is connected with a light-emitting diode L17 on the power supply and metering pump driver board, and a reset button is connected with a button S1 on the motherboard. The wiring terminals AC15-AC18 on the power supply and metering pump driver board are connected with the four switch power supply modules and a power supply output, and the power supply output supplies power to three CAN terminals. The aluminum profile passivation process conductivity detection control device of the present invention has the advantages of low manufacturing cost, high measurement precision, strong anti-interference capability, convenient maintenance, etc.

A fuel cell includes a separator (10B) interposed between adjacent unit cells (10A). A mixed fluid of air and water is supplied to an air electrode (12) of each unit cell. The separator includes a mesh conductor (14) on at least a surface facing the air electrode of the unit cells, and the mixed fluid passes through the mesh conductor. Water is retained on the mesh portion of the conductor. With this configuration, it is possible for the unit cell to be cooled by the release of latent heat when the water is evaporated by the heat of unit cell, without any clogging which inhibits contact between the electrode and the air.

A skew correction device includes: a first guide member which supports the sheet transported from a lower side thereof in a vertical direction by the transport roller and guides the sheet to the gate member; and a second guide member which is provided on an upper position from the first guide member in a vertical direction and guides the sheet to the gate member. Here, the second guide member includes at least one rotating member which faces a transport passage of the sheet interposed between the first guide member and the second guide member and is rotatably provided at least in the center of the second guide member in a width direction intersecting a transport direction of the sheet.

A metallic separator for a fuel cell including 2.2 to 6.0 parts by weight of tungsten based on 100 parts by weight of stainless steel containing molybdenum, and the weight ratio of molybdenum to tungsten (Mo / W) is 0.15 to 1.60. The separator for fuel cells has excellent anti-corrosive properties and contact resistance as low as that of a metal material, and thus, a fuel cell having high efficiency can be manufactured at a reasonable cost using the separator.