30results about How to "Resolve uneven diffusion" patented technology

The invention provides a vertical integrated unit diode chip which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode, the diode mesa structure comprises n diode units, n is larger than or equal to 2, and the area of the mesa structure is determined according to the current diffusion length. Thediode mesa structure comprises a first conductive type bonding pad and a second conductive type bonding pad, and the first conductive type bonding pad and the second conductive type bonding pad are arranged in the same side of the mesa structure; the first conductive type electrode is connected with the first conductive type bonding pad, and the second conductive type electrode is connected with the second conductive type bonding pad. The technical problems that a diode structure in the prior art is greatly limited in three important parameters, i.e., lumen efficiency, lumen density output andlumen cost is solved, lumen output of a unit area chip is improved, and the lumen cost is reduced.

The invention relates to the field of semiconductor materials and device processes, and especially relates to a semiconductor photoelectric device. The invention provides a normally-equipped integrated unit light emitting diode. The light emitting diode comprises a plurality of diode units, a first conductive type electrode and a second conductive type electrode, wherein the first conductive typeelectrode and the second conductive type electrode are arranged among the diode units, and the first conductive type electrode and the second conductive type electrode are overlapped in a spacing areaamong the diode units. A technical problem that a diode structure in the prior art is greatly limited in three important parameters of luminous efficiency, lumen density output and lumen cost is solved, lumen output of a unit area chip is improved, and lumen cost is reduced.

The invention provides a normally-equipped integrated unit diode chip. The normally-equipped integrated unit diode chip comprises a first conductive type electrode, a second conductive type electrodeand a diode mesa structure located between the first conductive type electrode and the second conductive type electrode. The diode mesa structure comprises n diode units, wherein n is greater than orequal to 2. Each of the n diode units comprises a quantum well active region located on the first conductive type layer, a second conductive type layer located on the quantum well active region, an insulating dielectric layer located on the first conductive type layer and partially covering the second conductive type layer, and a transparent electrode located on the second conductive type layer and partially covering the insulating dielectric layer, wherein the second conductive type electrode is located on the insulating dielectric layer and partially covers the transparent electrode. According to the invention, the problem that the thickness of the transparent electrode limits the transverse diffusion of the current and the light extraction efficiency of the LED in the prior art is solved, the lumen output of the unit area unit diode chip is improved, and the lumen cost is reduced.

The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. The invention provides a positively mounted integrated unit diode chip, a first conductivity type electrode, a second conductivity type electrode, and a diode mesa structure located between the first conductivity type electrode and the second conductivity type electrode, the diode mesa structure It includes n diode units, the n diode units are arranged in a geometric shape, and the electrode width and the area of ​​the mesa structure are determined according to the current. The invention solves the technical problem of the diode structure in the prior art that has great limitations in three important parameters: lumen efficiency, lumen density output, and lumen cost, improves the lumen output of unit diode chips per unit area, and reduces the lumen cost .

The invention provides an integrated unit diode chip, which includes a diode mesa structure, and the diode mesa structure includes a plurality of diode units, wherein the width of the diode unit along the y-axis direction gradually decreases from the middle of the integrated unit diode chip to both sides in the y-axis direction. , wherein the y-axis direction is the width direction of the integrated unit diode chip. The invention obtains ultra-uniform current distribution, heat distribution, wavelength distribution, and narrow half-height high-quality LED light source through the design of the uneven mesa structure, and solves the problem of the diode structure existing in the prior art in terms of lumen efficiency, lumen density output, The technical problem of great limitations on the three important parameters of lumen cost improves the lumen output of the chip per unit area and reduces the lumen cost.

The invention provides an integrated unit diode chip capable of uniformly emitting light, which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode, wherein the diode mesa structure comprises n diode units, and the n diode units are different in length in the x-axis direction or different in widthin the y-axis direction. The planar position function of the n diode units relative to the mesa structure is linear or nonlinear. The area of the mesa structure is determined according to the currentdiffusion length, and n is greater than or equal to 2. A non-uniform mesa structure design is adopted, a high-quality LED light source with super-uniform current distribution, thermal distribution, wavelength distribution and narrow half-height can be obtained, the technical problem that a diode structure in the prior art has great limitations on three important parameters of luminous efficiency,luminous density output and luminous cost is solved, luminous output of a unit area chip is improved, and the luminous cost is reduced.

This invention discloses a diffusion furnace of semiconductor silicon plate liquid source including: a diffusion tube and quartz tubes for spraying the source, in which, the diffusion furnace tube isin a structure of two ends open, 2-10 source-spraying quartz tubes are installed on the internal wall of the tube with the diameter of pha2-pha 10mm, capillary holes in uniform aperture are distributed on the wall of the tube and the exit end of the tube is connected with the source bottle of the liquid state diffusion source.

The invention discloses a pretreatment and scouring method for wide-width real silk fabrics, which belongs to the technical field of pretreatment of real silk products. It is characterized in that the processing steps are as follows: heat the car on the water in the dyeing tank to 58°C~63°C, run 2 times, and let off the water; after preheating the main axis, add hot water at 96°C~99°C in the dyeing tank, add Scouring aid; cover and run 4 times, let off the water; wash 3 times in hot water at 96°C~99°C, then pour the shaft in cold water; add water to the dyeing tank, add baking soda and desizing powder ZS-20 to make Obtain the refining solution to refine the crystal form, run 5~6 times and press Enter 4 times; wash 2 times in hot water at 96°C~99°C, and then pour the shaft with cold water. The present invention proposes a pretreatment and refining method for wide-width real silk fabrics, which mainly solves the problems of hard hand feeling at the head and tail and different hand feelings at the left and right sides when the real silk is degummed on a jigger.

The invention relates to an ink jet printing device and a method for spreading an alignment layer. The ink jet printing device comprises a machine frame and an ink jet head fixed to the machine frame, and further comprises an air knife located at the back of the ink jet head and fixed to the machine frame. By the adoption of the ink jet printing device and the method for spreading the alignment layer, diffusion of the alignment layer can be quickened, and the problem that the alignment layer is uneven in diffusion is solved.

The invention discloses an array substrate and a manufacturing method thereof, a display panel and a display device, which are used to reduce the gap between the upper surface of the via hole in the array substrate and the transparent conductive layer around the via hole, so as to solve the problem of alignment layer polyimide The problem of uneven diffusion of thin film PI can improve the display quality. The manufacturing method of the array substrate is characterized in that the method comprises: forming a via hole for connecting the second transparent conductive layer and the gate line layer on the base substrate by using a patterning process, and forming a via hole for connecting the second transparent conductive layer and the The via hole of the source-drain electrode layer and the via hole used to connect the first transparent conductive layer and the second transparent conductive layer; while forming the pattern of the second transparent conductive layer, the via hole is filled and leveled, so that the filled The upper surface of the flattened via hole is at the same level as the second transparent conductive layer around the via hole.

The invention discloses an LED chip and a manufacturing method thereof. The LED chip comprises: a substrate; an epitaxial structure arranged on the substrate, and the epitaxial structure includes an N-type semiconductor layer, a quantum well light-emitting layer and a P-type semiconductor layer arranged in sequence. The predetermined region of the epitaxial structure has a groove, and the groove is used to expose part of the N-type semiconductor layer; the P-type semiconductor layer has a first region, a second region and a third region; a first transparent conductive layer covering the first region; A current blocking layer covering the second region and part of the first transparent conductive layer; a second transparent conductive layer covering another part of the first transparent conductive layer, the third region and part of the current blocking layer; a P electrode covering another part of the current blocking layer; An N electrode arranged in the groove and electrically connected to the N-type semiconductor layer. The technical scheme of the invention solves the problem of uneven current diffusion in the LED chip, and improves the uniformity of light emission of the LED chip.

The present invention provides a vertically integrated unit light emitting diode, comprising: a first conductivity type electrode, a second conductivity type electrode, and a diode mesa structure located between the first conductivity type electrode and the second conductivity type electrode, the diode The mesa structure includes a plurality of diode units arranged in a geometric shape. The invention solves the technical problem that the diode structure in the prior art has great limitations on the three important parameters of lumen efficiency, lumen density output and lumen cost, improves the lumen output of the chip per unit area, and reduces the lumen cost.