Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vertical integrated unit diode chip

An integrated unit and diode technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of LED light efficiency, heat dissipation and stability limitations, and achieve the goal of increasing the effective light emitting area, large heat dissipation area, and optimal heat dissipation performance. Effect

Active Publication Date: 2020-11-13
纳微朗科技(深圳)有限公司
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical integrated unit diode chip
  • Vertical integrated unit diode chip
  • Vertical integrated unit diode chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] This embodiment provides a vertically integrated unit diode chip, including: a second conductivity type electrode 1, a second conductivity type pad 11, a first conductivity type pad 10, a bar-type electrode line 12, a diode mesa structure 13, and a diode unit 14 and groove 15. The diode mesa structure includes 6 rows of 52 square diode units 14 of equal size and uniform distribution, and the length of the diode units 14 along the X-axis direction is 40 microns. The diode mesa structure is arranged in a square, the diode units are connected in parallel, and the size of the mesa structure is smaller than the diffusion length of the current injection. The shape of the diode units is rectangular, and they are distributed according to a uniform symmetrical arrangement. The electrodes of the second conductivity type are n electrodes, the pads of the first conductivity type are p pads, and the pads of the second conductivity type are n pads.

[0058] In some preferred embodi...

Embodiment 2

[0068] This embodiment provides a vertically integrated unit diode chip, such as Figure 7 As shown, it includes: a second conductivity type electrode 1 , a second conductivity type pad 11 , a first conductivity type pad 10 , a bar-shaped electrode line 12 , a diode mesa structure 13 , a diode unit 14 and a trench 15 . The diode mesa structure includes 6 rows of 52 square diode units 14 of equal size and uniform distribution, and the length of the diode unit 14 along the X-axis direction is 40 microns. The diode mesa structure is arranged in a square, the diode units are connected in parallel, and the size of the mesa structure is smaller than the diffusion length of the current injection. The shape of the diode units is a regular rectangle, distributed according to a uniform symmetrical arrangement.

[0069] In some preferred embodiments, the length of the diode unit in the X-axis direction is 10 nanometers, and in other preferred embodiments, the length of the diode unit in...

Embodiment 3

[0075] This embodiment provides a vertically integrated unit diode chip, such as Figure 9 As shown, it includes: a second conductivity type electrode 1 , a second conductivity type pad 11 , a first conductivity type pad 10 , a bar-shaped electrode line 12 , a diode mesa structure 13 , a diode unit 14 and a trench 15 . The diode mesa structure includes 6 rows of 6 rectangular diode units 14 of different sizes, and the length of the diode units 14 along the X-axis direction is 80 microns. The diode mesa structure is arranged in a rectangle, and the diode units are connected in parallel, and the size of the mesa structure is smaller than the diffusion length of the current injection. The shape of the diode units is rectangular, and they are distributed according to non-uniform symmetrical arrangement.

[0076]The first conductivity type pad 10 and the second conductivity type pad 11 are on the same side of the mesa structure, and the second conductivity type electrode 1 and the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a vertical integrated unit diode chip which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode, the diode mesa structure comprises n diode units, n is larger than or equal to 2, and the area of the mesa structure is determined according to the current diffusion length. Thediode mesa structure comprises a first conductive type bonding pad and a second conductive type bonding pad, and the first conductive type bonding pad and the second conductive type bonding pad are arranged in the same side of the mesa structure; the first conductive type electrode is connected with the first conductive type bonding pad, and the second conductive type electrode is connected with the second conductive type bonding pad. The technical problems that a diode structure in the prior art is greatly limited in three important parameters, i.e., lumen efficiency, lumen density output andlumen cost is solved, lumen output of a unit area chip is improved, and the lumen cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drill-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This restricts vertical high-power LED chips from providing products with higher lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market An effective solution cannot be provided. [0003] The prior art one is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/64H01L33/62H01L25/075
CPCH01L33/20H01L33/642H01L33/62H01L25/0753
Inventor 闫春辉蒋振宇
Owner 纳微朗科技(深圳)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com