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Front-mounted integrated unit light-emitting diode

A technology of light-emitting diodes and integrated units, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor conductivity of p-type GaN materials, uneven current diffusion of chips, uneven current diffusion, etc., to improve light extraction. Efficiency, reduced lumen cost, improved lumen output

Pending Publication Date: 2019-05-28
纳微朗科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using ITO transparent conductive ohmic contact, adding metal lead current diffusion method, due to the high resistivity of ITO, and the poor conductivity of p-type GaN material, the overall current diffusion is very uneven
In addition, because the current diffusion length of the LED chip is inversely proportional to the square root of the current density, under the injection of a large current, the current diffusion length is shorter, resulting in more uneven current diffusion of the chip, lower efficiency, and more difficult heat dissipation.

Method used

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  • Front-mounted integrated unit light-emitting diode
  • Front-mounted integrated unit light-emitting diode
  • Front-mounted integrated unit light-emitting diode

Examples

Experimental program
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Effect test

Embodiment 1

[0060] This embodiment provides a kind of integrated unit light-emitting diode, such as figure 2 shown, including:

[0061] The P-type electrode 1, the N-type electrode 2, the diode mesa structure 3, and the diode mesa structure 3 include 6 rows of 102 triangular diode units of equal size and uniform distribution.

[0062] Due to the high resistivity of indium tin oxide (ITO) and the poor electrical conductivity of the P-type GaN material itself, there is a problem of uneven current diffusion. This embodiment adopts the current diffusion method of ITO plus metal wires. In the front-mounted integrated unit light-emitting diode structure, the diode mesa structure is arranged in a triangle with a size of 0.1-200 microns, and the size of the mesa structure is smaller than the diffusion length of current injection. The electrode material adopts non-light-absorbing materials such as ITO / Al / Ag to improve light efficiency. The width of the finger line is 0.1-20 microns, and the thic...

Embodiment 2

[0065] This embodiment provides a kind of integrated unit light-emitting diode, such as image 3 shown, including:

[0066] The P-type electrode 1, the N-type electrode 2, the diode mesa structure 3, and the diode mesa structure 3 include 6 rows of 52 square diode units of equal size and uniform distribution.

[0067] The diode mesa structure 3 adopts a square diode unit arrangement with a length of 0.1-200 microns. In order to have better current diffusion performance, the length of the mesa structure is smaller than the diffusion length of current injection. The electrode material adopts non-light-absorbing materials such as ITO / Al / Ag to improve light efficiency. The width of the finger line is 0.1-20 microns, and the thickness is 0.1-10 microns.

[0068] This design structure can obtain the best current diffusion and heat dissipation performance under the specified working current, and greatly improve the injection current density of the chip, thereby increasing the lumen ...

Embodiment 3

[0070] This embodiment provides a kind of integrated unit light-emitting diode, such as Figure 4 shown, including:

[0071] The P-type electrode 1, the N-type electrode 2, the diode mesa structure 3, and the diode mesa structure 3 include 6 rows of 6 uniformly distributed rectangular diode units of unequal size.

[0072] The diode mesa structure 3 adopts a rectangular diode unit arrangement, and the length of the narrowest part of the rectangle is 0.1-200 microns. In order to have better current diffusion performance, the length of the mesa structure is smaller than the diffusion length of current injection. This design structure can obtain the best current diffusion and heat dissipation performance under the specified working current, and greatly improve the injection current density of the chip, thereby increasing the lumen output per unit area.

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Abstract

The invention relates to the field of semiconductor materials and device processes, in particular to a semiconductor photoelectric device. The invention provides a front-mounted integrated unit light-emitting diode, which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure positioned between the first conductive type electrode and the second conductive type electrode. The diode mesa structure comprises a plurality of diode units, and the plurality of diode units are arranged in a geometrical shape. The technical problem that in the prior art, a diode structure is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost is solved, lumen output of a unit area chip is improved, and lumen costis reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] Conventional front-mounted integrated unit light-emitting diodes have uneven current diffusion, resulting in loss of luminous efficiency. The heat dissipation of the diode chip under the existing structure is realized through the sapphire substrate, and the heat dissipation is poor, which affects the efficiency and stability of the chip. Therefore, it is usually front-mounted The main application field of light-emitting diode chips is the small and medium power chip market below 0.5 watts, and it is impossible to provide products with high lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The current LED technol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/24H01L33/36H01L33/64H01L33/46H01L33/06
CPCH01L33/24H01L33/36H01L33/642H01L33/46H01L33/06
Inventor 闫春辉蒋振宇
Owner 纳微朗科技(深圳)有限公司
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