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Vertical structure LED chip with novel electrode wire arrangement

A LED chip and vertical structure technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of LED light efficiency, heat dissipation and stability limitations, to increase the effective light output area, increase the light emitting area, and large heat dissipation area effect

Pending Publication Date: 2020-11-06
纳微朗科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

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  • Vertical structure LED chip with novel electrode wire arrangement
  • Vertical structure LED chip with novel electrode wire arrangement
  • Vertical structure LED chip with novel electrode wire arrangement

Examples

Experimental program
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Effect test

Embodiment 1

[0049] This embodiment provides a novel vertical structure LED chip with electrode wire arrangement, including: second conductivity type electrode wire 1, diode mesa structure 10, diode unit 12, trench structure 11 and second conductivity type pad 13. The trench structure 11 is located between the diode units and has a rectangular shape. The electrode lines of the second conductivity type extend from the front face to the rear face of each diode unit; the area of ​​the mesa structure is determined according to the current diffusion length. The pad of the second conductivity type has a thickness of 0.001 micron to 20 micron, and a width of 10 micron to 100 micron. The pads of the second conductivity type are connected to the electrode lines of the second conductivity type; the electrode lines of the second conductivity type are line-shaped connection lines. The second conductive type electrode line has a width of 0.001-20 microns and a thickness of 0.001-10 microns. The electr...

Embodiment 2

[0056] This embodiment provides a novel vertical structure LED chip with electrode wire arrangement, including: second conductivity type electrode wire 1, diode mesa structure 10, diode unit 12, trench structure 11 and second conductivity type pad 13. The trench structure 11 is located between the diode units, and the electrode lines of the second conductivity type extend from the front end to the rear end of each diode unit, or extend from the front end to the rear end of some diode units; the area of ​​the mesa structure is determined according to the current diffusion length . The pad of the second conductivity type has a thickness of 0.001 micron to 20 micron, and a width of 10 micron to 100 micron. The pads of the second conductivity type are connected to the electrode lines of the second conductivity type; the electrode lines of the second conductivity type are line-shaped connection lines. The width of the electrode lines of the second conductivity type is 0.001-20 mic...

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Abstract

The invention provides a vertical structure LED chip with novel electrode wire arrangement. The vertical structure LED chip comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode. The second conductive type electrode comprises a second conductive type electrode wire and a second conductive type bonding pad; the diode mesa structure comprises n diode units and a trench structure, and n is greater than or equal to 2; and the second conductive type electrode wire is in ohmic contact with the tops ofthe n diode units, and partially or completely extends from the front end surfaces to the rear end surfaces of the n diode units. The arrangement of the electrode wires between the units is reduced,the current diffusion effect is enhanced while the lightemitting area is increased, the technical problem that in the prior art, a diode structure is greatly limited in three important parameters including lumen efficiency, lumen density output and lumen cost is solved, lumen output of a unit area chip is improved, and lumen cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drill-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This restricts vertical high-power LED chips to provide products with higher lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market An effective solution cannot be provided. [0003] The prior art one is Proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L33/38H01L33/20
CPCH01L27/156H01L33/38H01L33/20
Inventor 闫春辉蒋振宇
Owner 纳微朗科技(深圳)有限公司
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