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A vertically integrated unit diode chip

A technology of integrated units and diodes, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of LED light efficiency, heat dissipation and stability limitations, and achieve increased effective light output area, large heat dissipation area, and high photoelectric conversion efficiency. Effect

Active Publication Date: 2022-02-01
纳微朗科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

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  • A vertically integrated unit diode chip
  • A vertically integrated unit diode chip
  • A vertically integrated unit diode chip

Examples

Experimental program
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Effect test

Embodiment 1

[0049] This embodiment provides a vertically integrated unit diode chip, such as image 3 with 7 As shown, it includes: n-type electrode 1, diode mesa structure 2, diode mesa structure 2 includes 6 rows of 102 triangular diode units of equal size and uniform distribution, and the length of the diode unit along the x-axis direction is 40 microns. The diode mesa structure adopts a triangular arrangement, and the size of the mesa structure is smaller than the diffusion length of the current injection. The electrode material adopts non-light-absorbing materials such as ITO, Al, Ag, etc. to improve light efficiency. The width of the electrode line is 0.001-20 microns, and the thickness is 0.001-10 microns.

[0050] When the vertically integrated unit diode chip emits light waves of UVC, UVB, UVA, purple light, blue light, green light, yellow light, and red light: the material of the unit diode chip is Alx1Iny1Gaz1N, 1≥x1, y1, z1≥0; the lining The bottom is a planar substrate, or ...

Embodiment 2

[0054] This embodiment provides another vertically mounted integrated unit diode chip, such as Figure 4 with 7 shown, including:

[0055] The n-type electrode 1, the diode mesa structure 2, the diode mesa structure 2 includes 6 rows of 6 uniformly distributed rectangular diode units, and the length of the diode units along the x-axis direction is 40 microns. The diode mesa structure is arranged in a rectangle, and the size of the mesa structure is smaller than the diffusion length of the current injection. The electrode material adopts non-light-absorbing materials such as ITO, Al, Ag, etc. to improve light efficiency. The width of the electrode line is 0.001-20 microns, and the thickness is 0.001-10 microns.

[0056] When the vertically integrated unit diode chip emits light waves of UVC, UVB, UVA, purple light, blue light, green light, yellow light, and red light: the material of the unit diode chip is Alx1Iny1Gaz1N, 1≥x1, y1, z1≥0; the lining The bottom is a planar subs...

Embodiment 3

[0060] This embodiment provides another vertically mounted integrated unit diode chip, such as Figure 5 with 7 shown, including:

[0061] The n-type electrode 1, the diode mesa structure 2, the diode mesa structure 2 includes 6 rows of 56 square diode units of equal size and uniform distribution. The diode mesa structure adopts a square arrangement, and the size of the mesa structure is smaller than the diffusion length of the current injection. The electrode material adopts non-light-absorbing materials such as ITO, Al, Ag, etc. to improve light efficiency. The width of the electrode line is 0.001-20 microns, and the thickness is 0.001-10 microns.

[0062] When the vertically integrated unit diode chip emits light waves of UVC, UVB, UVA, purple light, blue light, green light, yellow light, and red light: the material of the unit diode chip is Alx1Iny1Gaz1N, 1≥x1, y1, z1≥0; the lining The bottom is a planar substrate, or a patterned substrate; the substrate material is sap...

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Abstract

The present invention provides a vertically integrated unit light emitting diode, comprising: a first conductivity type electrode, a second conductivity type electrode, and a diode mesa structure located between the first conductivity type electrode and the second conductivity type electrode, the diode The mesa structure includes a plurality of diode units arranged in a geometric shape. The invention solves the technical problem that the diode structure in the prior art has great limitations on the three important parameters of lumen efficiency, lumen density output and lumen cost, improves the lumen output of the chip per unit area, and reduces the lumen cost.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drill-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This restricts vertical high-power LED chips from providing products with higher lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market An effective solution cannot be provided. [0003] The prior art one is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/861
CPCH01L27/0207H01L27/0203H01L29/8613
Inventor 蒋振宇闫春辉
Owner 纳微朗科技(深圳)有限公司
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