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LED chip and manufacturing method thereof

A technology of LED chips and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as uneven current diffusion, and achieve the effects of solving uneven current diffusion, improving uniformity, and uniform current diffusion

Active Publication Date: 2017-10-20
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above problems, the technical solution of the present invention provides an LED chip and its manufacturing method, which solves the problem of uneven current diffusion in the LED chip and improves the uniformity of the LED chip's light emission.

Method used

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  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof

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Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] Conventional LED chip structure such as figure 1 as shown, figure 1 It is a structural diagram of a conventional LED chip. An epitaxial structure 12 is provided on a substrate 11. The epitaxial structure 12 has an N-type semiconductor layer, a quantum well light-emitting layer and a P-type semiconductor layer sequentially arranged on the substrate 11. A groove is provided on the epitaxial structure 12 to expose part of the N-type semiconductor layer. ...

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Abstract

The invention discloses an LED chip and a manufacturing method thereof. The LED chip includes a substrate, an epitaxial structure, a first transparent conductive layer, a current blocking layer, a second transparent conductive layer, a P electrode, and an N electrode. The epitaxial structure, which is arranged on the substrate, includes an N-type semiconductor layer, a quantum well light emitting layer and a P-type semiconductor layer arranged in sequence. The epitaxial structure has a groove in a preset region, and the groove is used to expose part of the N-type semiconductor layer. The P-type semiconductor layer has a first region, a second region and a third region. The first transparent conductive layer covers the first region. The current blocking layer covers the second region and one part of the first transparent conductive layer. The second transparent conductive layer covers the other part of the first transparent conductive layer, the third region and one part of the current blocking layer. The P electrode covers the other part of the current blocking layer. The N electrode is arranged in the groove and electrically connected with the N-type semiconductor layer. Through the technical scheme, the problem that the current in an LED chip diffuses unevenly is solved. The light emission uniformity of the LED chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and more specifically, relates to an LED chip and a manufacturing method thereof. Background technique [0002] The light-emitting principle of light-emitting diodes (LEDs) is to use the energy difference between electrons moving between N-type semiconductors and P-type semiconductors to release energy in the form of light. This light-emitting principle is different from the light-emitting principle of incandescent lamps, so light-emitting diodes are used called a cold light source. Due to the advantages of high durability, long life, light weight, and low power consumption, light-emitting diodes are used in many fields such as signal indicators, lighting devices, and display devices. [0003] The common structure of an LED chip is to sequentially form an N-type semiconductor layer, a quantum well light-emitting layer, and a P-type semiconductor layer on a substrate. Part of the P...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/42
Inventor 刘英策刘兆宋彬吴奇隆李俊贤
Owner XIAMEN CHANGELIGHT CO LTD
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