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Vertical integrated unit diode chip

A technology of integrating cells and diodes, applied in electrical components, electro-solid devices, circuits, etc., to solve problems such as LED light efficiency, heat dissipation and stability limitations

Inactive Publication Date: 2020-10-30
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

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  • Vertical integrated unit diode chip
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  • Vertical integrated unit diode chip

Examples

Experimental program
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Embodiment 1

[0055] This embodiment provides a vertically integrated unit diode chip, including: a second conductivity type electrode 1 , a diode mesa structure 6 , a trench 7 , a diode unit 8 and an electrode line 9 .

[0056] like image 3 As shown, the diode mesa structure includes 6 rows of 102 equally sized and uniformly distributed triangular diode units, and the length of the diode units along the x-axis direction is 40 microns. The diode mesa structure adopts a triangular arrangement, and the size of the mesa structure is smaller than the current diffusion length. The diode units are triangular in shape and distributed according to a uniform symmetrical arrangement. The electrode wire is an electrode connecting wire between diode units, the width of the electrode wire is 0.001-20 microns, and the thickness is 0.001-10 microns.

[0057] like Figure 4 As shown, the diode mesa structure includes 6 rows of 6 rectangular diode units with uniform sizes, and the length of the diode un...

Embodiment 2

[0062] This embodiment provides a vertically mounted integrated unit diode chip, comprising a first conductivity type layer 5, a second conductivity type layer 3, a quantum well active region 4 on the first conductivity type layer, and a second conductivity type electrode 1. The insulating medium layer 2, wherein the layer of the first conductivity type is a p-GaN layer, the layer of the second conductivity type is an n-GaN layer, and the electrode of the second conductivity type is an n-electrode. The trench structure is located between the diode units, and the trench depth is L. The thickness of the n-GaN layer is L2, the thickness of the quantum well active region is L3, and the thickness of the p-GaN layer is L1.

[0063] like Image 6 As shown, etching from the n-GaN layer to the p-GaN layer to half the thickness of the p-GaN layer, the relationship between the trench depth L and L1, L2 and L3 is: L=L1+L3+0.5*L2.

[0064] like Figure 7 As shown, when etching from the ...

Embodiment 3

[0066] This embodiment provides a vertically mounted integrated unit diode chip, such as Figure 8 As shown, the diode mesa structure includes 4 rows of a total of 30 ladder-shaped diode units of equal size and uniform distribution, and the length of the diode unit along the x-axis direction is 40 microns. The size of the mesa structure is smaller than the diffusion length of the current injection. The shape of the diode units is trapezoidal and distributed according to a uniform symmetrical arrangement. The angle between the side wall of the diode unit and the horizontal plane is greater than 0 degrees and less than or equal to 90 degrees, and the shape of the side wall of the diode unit is trapezoidal.

[0067] like Figure 9 As shown, the diode cell has a sidewall surface with grooves distributed from the bottom to the top of the mesa. The cross-sectional shape of the trench on the side wall of the diode unit is triangular, the width of the trench on the side wall is 0.5...

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Abstract

The invention provides a vertical integrated unit light-emitting diode. The vertical integrated unit light-emitting diode comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode, wherein the diode mesa structure comprises n diode units and a trench structure, and n is greater than or equal to 2; the trench structures are located between the diode units; the area of the diode mesa structure is determined according to the current diffusion length. The diode mesa structure also comprises a first conductive type layer, a second conductive type layer, a quantum well active region positioned on the first conductive type layer, wherein the thickness of the first conductive type layer is L1, the thickness of the second conductive type layer is L2, the thickness of the quantum well active region is L3, the trench depth L is greater than (L2+L3) and less than or equal to (L1+L2+L3), and the area ofthe diode mesa structure is determined according to the current diffusion length. According to the invention, the technical problem that a diode structure in the prior art is greatly limited in threeimportant parameters, namely, the lumen efficiency, the lumen density output and the lumen cost, is solved, the lumen output of a unit area chip is improved, and the lumen cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drill-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This restricts vertical high-power LED chips from providing products with higher lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market An effective solution cannot be provided. [0003] The prior art one is ...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/24H01L33/14H01L33/64H01L25/075
CPCH01L25/0753H01L33/14H01L33/20H01L33/24H01L33/642
Inventor 闫春辉蒋振宇
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON
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