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Normally-equipped integrated unit diode chip

A technology of integrated units and diodes, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of LED chip light output efficiency and excessive influence of current diffusion, so as to improve light extraction efficiency, weak light absorption ability, and increase light output area. Effect

Active Publication Date: 2020-11-10
纳微朗科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem that the thickness of the transparent electrode has too much influence on the light output efficiency and current diffusion of the LED chip in the prior art, the present invention proposes a front-mounted integrated unit diode chip with small unit size and thin transparent electrodes

Method used

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  • Normally-equipped integrated unit diode chip
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Embodiment 1

[0055] The present embodiment provides a formally mounted integrated unit diode chip, such as image 3 As shown, it includes: n-type electrode 1 , n-type pad 11 , p-type pad 12 , n-type electrode line 13 , p-type electrode line 14 , diode mesa structure 15 , diode unit 16 and trench 17 . The diode mesa structure includes 6 rows of 52 square diode units 16 of equal size and uniform distribution, and the length of the diode units along the Y-axis direction is 40 microns. The diode mesa structure adopts a square arrangement, and the size of the mesa structure is smaller than the diffusion length of the current injection. The shape of the diode units is a regular rectangle, distributed according to a uniform symmetrical arrangement.

[0056] In some preferred embodiments, the length of the diode unit along the Y-axis direction is 100 nanometers; in other preferred embodiments, the length of the diode unit along the Y-axis direction is 10 nanometers.

[0057] The electrode wires ...

Embodiment 2

[0063] The present embodiment provides a formally mounted integrated unit diode chip, such as Figure 4 As shown, it includes: a first conductivity type electrode 1, a first conductivity type pad 11, a second conductivity type pad 12, a first conductivity type electrode line 13, a second conductivity type electrode line 14, a diode mesa structure 15, a diode cell 16 and trench 17 . The diode mesa structure includes 6 rows of 102 triangular diode units 16 of equal size and uniform distribution, and the length of the diode units along the Y-axis direction is 80 microns. The diode mesa structure adopts a triangular arrangement, and the size of the mesa structure is smaller than the diffusion length of the current injection. The diode units are triangular in shape and distributed according to a uniform symmetrical arrangement.

[0064] In some preferred embodiments, the length of the diode unit along the Y-axis direction is 100 microns; in other preferred embodiments, the length...

Embodiment 3

[0070] The present embodiment provides a formally mounted integrated unit diode chip, such as Figure 5 As shown, it includes: a first conductivity type electrode 1, a first conductivity type pad 11, a second conductivity type pad 12, a first conductivity type electrode line 13, a second conductivity type electrode line 14, a diode mesa structure 15, a diode cell 16 and trench 17 . The diode mesa structure includes 6 rows of 52 square diode units 16 of equal size and uniform distribution, and the length of the diode units along the Y-axis direction is 40 microns. The diode mesa structure adopts a square arrangement, and the size of the mesa structure is smaller than the diffusion length of the current injection. The shape of the diode units is a regular rectangle, distributed according to a uniform symmetrical arrangement. Each diode unit is provided with a hole structure, and the hole structure includes two hole units, and the hole unit is a circular hole unit with a diamet...

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Abstract

The invention provides a normally-equipped integrated unit diode chip. The normally-equipped integrated unit diode chip comprises a first conductive type electrode, a second conductive type electrodeand a diode mesa structure located between the first conductive type electrode and the second conductive type electrode. The diode mesa structure comprises n diode units, wherein n is greater than orequal to 2. Each of the n diode units comprises a quantum well active region located on the first conductive type layer, a second conductive type layer located on the quantum well active region, an insulating dielectric layer located on the first conductive type layer and partially covering the second conductive type layer, and a transparent electrode located on the second conductive type layer and partially covering the insulating dielectric layer, wherein the second conductive type electrode is located on the insulating dielectric layer and partially covers the transparent electrode. According to the invention, the problem that the thickness of the transparent electrode limits the transverse diffusion of the current and the light extraction efficiency of the LED in the prior art is solved, the lumen output of the unit area unit diode chip is improved, and the lumen cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] Conventional front-mounted integrated unit diode chips have uneven current diffusion, resulting in loss of luminous efficiency. The heat dissipation of the diode unit diode chip under the existing structure is realized through the sapphire substrate, and the heat dissipation is poor, thus affecting the efficiency and stability of the unit diode chip. Therefore, the main application field of front-mounted light-emitting diode unit diode chips is the small and medium power unit diode chip market below 0.5 watts, and it is impossible to provide products with high lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in three important parameters: lumen efficiency, lumen density output, and lumen cost. Currentl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/42H01L33/62H01L33/64H01L27/15
CPCH01L33/145H01L33/42H01L33/62H01L33/642H01L27/156
Inventor 蒋振宇闫春辉
Owner 纳微朗科技(深圳)有限公司
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