The present invention provides a gate driver circuit basing on IGZO process, comprising GOAs in cascade connection comprising a Nth-stage GOA, wherein the Nth-stage GOA further comprising a pull-up control part 100, a pull-up part 200, a transfer part 300, a pull-down part 400, a pull-down holding part 500, a boost part 600, a first negative supply VSS1, a second negative supply VSS2, a third negative supply VSS3, which are three gradually decreasing negative supplies and pull down an output terminal G(N), a first node Q(N), a second node P(N), and a driving single ST(N) to prevent the electrical leakage of TFTs effectively. And channels of the TFT switches of the gate driver circuit basing on the IGZO process are oxide semiconductor channels.