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281results about How to "Poor adhesion" patented technology

Method of forming a conductive wiring pattern by laser irradiation and a conductive wiring pattern

Fine wirings are made by a method having the steps of painting a board with metal dispersion colloid including metal nanoparticles of 0.5 nm-200 nm diameters, drying the metal dispersion colloid into a metal-suspension film, irradiating the metal-suspension film with a laser beam of 300 nm-550 nm wavelengths, depicting arbitrary patterns on the film with the laser beam, aggregating metal nanoparticles into larger conductive grains, washing the laser-irradiated film, eliminating unirradiated metal nanoparticles, and forming metallic wiring patterns built by the conductive grains on the board. The present invention enables an inexpensive apparatus to form fine arbitrary wiring patterns on boards without expensive photomasks, resists, exposure apparatus and etching apparatus. The method can make wirings also on plastic boards or low-melting-point glass boards which have poor resistance against heat and chemicals.
Owner:SUMITOMO ELECTRIC IND LTD

High strength hot dip galvanized steel sheet and high strength galvannealed steel sheet excellent in shapeability and plateability and methods of production and apparatuses for production of the same

ActiveUS20100304183A1Excellent in shapeability and plateabilityHigh strengthHot-dipping/immersion processesPretreated surfacesOxideHigh intensity
Hot dip galvanized steel sheet excellent in shapeability and plateability comprised of high strength steel sheet according to the present invention can be provided containing, by mass % about, C: 0.05 to 0.25%, Si: 0.3 to 2.5%, Mn: 1.5 to 2.8%, P: 0.03% or less, S: 0.02% or less, Al: 0.005 to 0.5%, N: 0.0060% or less and the balance of Fe and unavoidable impurities. The exemplary steel sheet can have thereon a galvanized layer containing, e.g., about Al: 0.05 to 10 mass % and Fe: 0.05 to 3 mass % and the balance of Zn and unavoidable impurities. Such exemplary hot dip galvanized steel sheet can have oxides containing Si in an average content of about 0.6 to 10 mass % at the crystal grain boundaries and in the crystal grains at the sheet steel side 5 μm or less from the interface between the high strength steel sheet and the plating layer and by the presence of Fe—Zn alloy with an average grain size of about 0.5 to 3 μm at the plating side.
Owner:NIPPON STEEL CORP

Antimicrobial material compositions enriched with different active oxygen species

This invention discloses novel antimicrobial materials comprising of nanocrystalline metal, metal oxide, and active oxygen species in a permeable structure. It also discloses the compositions of the inventive material enriched with different active oxygen species. The inventive material showed a strong antimicrobial ability over a wide spectrum of microbies. The average log-reduction value was eight within five minutes. The inventive materials can remain sterile in air over more than two months. The methods used to prepare this inventive material are disclosed.
Owner:RUAN HAI XIONG

Ultra-low loadings of Au for stainless steel bipolar plates

An electrically conductive fluid distribution element for a fuel cell which comprises an electrically conductive substrate, a flow field for distributing fluid along a surface of the substrate, and an electrically conductive coating on the surface which comprises a noble metal, desirably Ru, Rh, Pd, Ag, Ir, Pt, Os, and preferably Au.
Owner:GM GLOBAL TECH OPERATIONS LLC

Integrated circuit device with improved underfill coverage

An integrated circuit device (300) includes a functional integrated circuit (IC) die (310) having a top IC surface with IC non-contact regions (313) and a plurality of electrically conductive bump pads (311, 312, 313) at pad locations. In the IC (310), at least one of the bump pads (311, 312, 313) extends outward from beyond the IC non-contact regions (313). The integrated circuit device (300) can also include a workpiece (305) having a top workpiece surface comprising at least one die attach area (319) for attaching the IC die (310). The die attach area (319) can include non-contact regions (316) and a plurality of electrically conductive contact pads (317) recessed relative to the non-contact regions (316), where the contact pads (317) face the top IC surface and match the pad locations (312). In the die attach area (319), at least one of the contact pads (317) includes electrically conductive pedestal features (321) extending towards the top IC surface, where the extending bump pads (311) physically contact one of the pedestal features (321) and electrically connect the IC die (310) to the workpiece (305). In the integrated circuit device (300), the pedestal features (321) increase a gap between the IC (310) and the workpiece top surfaces to be filled with an underfill dielectric material (332).
Owner:TEXAS INSTR INC

Moisture resistant photovoltaic devices with elastomeric, polysiloxane protection layer

Improved protection systems for CIGS-based microelectronic devices of the type incorporating electric conductor(s) such as an electronic collection grid. In one aspect, the present invention relates to a photovoltaic device having a light incident surface and a backside surface. The device includes a chalcogenide-containing photovoltaic layer comprising at least one of copper, indium and/or gallium. A transparent conductive layer is interposed between the photovoltaic layer and the light incident surface, wherein the transparent conductive layer is electrically coupled to the photovoltaic layer. An electronic collection grid is electrically coupled to the transparent conductive layer and overlying at least a portion of the transparent conductive layer. An elastomeric structure having a light incident surface, said structure overlying at least portions of the electronic collection grid and the transparent conductive layer in a manner such that the light incident surface of the elastomeric structure is spaced apart from a major portion of the conductor, and wherein the elastomeric structure comprises an elastomeric siloxane polymer having a WVTR of at least 0.1 g/m2-day. An optional protective barrier overlies the elastomeric structure. The protection systems of the invention incorporate elastomers with water vapor transmission rates that are atypically high in the context of CIGS-based devices.
Owner:DOW GLOBAL TECH LLC

Welding electrode and method

A welding electrode has a body having a shank and a contact region for placement against a workpiece during welding. A portion of the body may be formed on a parabolic profile. A coating is formed on the contact region. The coating may have a first layer, and a second layer formed over the first layer. The first and second layers may have different compositions. The electrode may have internally formed cooling finwork for interaction with a liquid cooling system.
Owner:HUYS IND
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